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Monocrystalline silicon growth furnace

A growth furnace and monocrystalline silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the unfavorable furnace temperature field uniformity, oxygen content, lower crystal ingot quality and production cost, unfavorable crystal ingot out of the furnace and cleaning problems to achieve the effect of shortening the melting time, reducing the radial temperature gradient and saving costs

Active Publication Date: 2019-04-19
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the argon gas flow in this process is directly discharged from the chamber without passing through the graphite heater, which saves energy; Ingot out of the furnace and cleaning; the growth cycle of the ingot is significantly increased, but the quality and production cost of the ingot are reduced

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 8-inch single crystal silicon for N-type integrated circuits is grown by Cz method or magnetic field Cz method, and a 24-inch quartz crucible is used, and the polysilicon raw material loading capacity is 120Kg. The thickness of the diversion guide cylinder is 10mm, and the thermal conductivity of the graphite material used is 20W / m / K; the total thickness of the vertical distributor cylinder is 80mm, and the horizontal distance between the vertical distributor cylinder and the diversion guide cylinder is 20mm , The maximum vertical distance is 100mm, and the bottom of the inner and outer chambers separated by the bottom guide tube are respectively provided with two sets of exhaust valves. The thickness of the quartz tube of the outer layer of the vertical split tube is 20mm, the thickness of the graphite tube of the inner layer is 30mm, and the middle layer is filled with graphite carbon felt.

[0050] After the charging is completed, place the diversion guide tube, clos...

Embodiment 2

[0053] 8-inch single crystal silicon for N-type integrated circuits is grown by Cz method or magnetic field Cz method, and a 24-inch quartz crucible is used, and the polysilicon raw material loading capacity is 120Kg. The thickness of the diversion guide cylinder is 10mm, and the thermal conductivity of the graphite material used is 20W / m / K; the total thickness of the vertical distributor cylinder is 80mm, and the horizontal distance between the vertical distributor cylinder and the diversion guide cylinder is 20mm , The maximum vertical distance is 100mm, and the bottom of the inner and outer chambers separated by the bottom guide tube are respectively provided with two sets of exhaust valves. The thickness of the quartz tube of the outer layer of the vertical split tube is 20mm, the thickness of the graphite tube of the inner layer is 30mm, and the middle layer is filled with graphite carbon felt.

[0054] After the charging is completed, place the diversion guide tube, clos...

Embodiment 3

[0057] 8-inch single crystal silicon for N-type integrated circuits is grown by Cz method or magnetic field Cz method, and a 24-inch quartz crucible is used, and the polysilicon raw material loading capacity is 120Kg. The thickness of the diversion guide cylinder is 10mm, and the thermal conductivity of the graphite material used is 20W / m / K; the total thickness of the vertical distributor cylinder is 80mm, and the horizontal distance between the vertical distributor cylinder and the diversion guide cylinder is 20mm , The maximum vertical distance is 100mm, and the bottom of the inner and outer chambers separated by the bottom guide tube are respectively provided with two sets of exhaust valves. The thickness of the quartz tube of the outer layer of the vertical split tube is 20mm, the thickness of the graphite tube of the inner layer is 30mm, and the middle layer is filled with graphite carbon felt.

[0058] After the charging is completed, place the diversion guide tube, clos...

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Abstract

The invention discloses a monocrystalline silicon growth furnace, which is characterized by arranging a flow dividing and guiding cylinder on a graphite crucible mouth and arranging a vertical flow dividing cylinder around a main heater, so that argon gas flow is separated into two flows by the vertical flow dividing cylinder, one flow enters the vertical flow dividing cylinder and is discharged out from a chamber through the main heater, and the other flow is directly discharged out from the chamber through the vertical flow dividing cylinder. In addition, the flow quantity of the two gas flows can be adjusted by vent valves, thus regulating heat field distribution and reducing heat loss. The monocrystalline silicon growth furnace can significantly reduce power consumption, reduces growth period of crystal ingots, and reduces production cost.

Description

technical field [0001] The invention belongs to a single crystal silicon growth furnace, in particular to a single crystal silicon growth furnace which improves the melting rate of raw materials and reduces the power consumption of single crystal silicon growth. Background technique [0002] With the rapid development of integrated circuits toward miniaturization, low power consumption, high computing speed, and narrow line width, higher requirements are put forward for the quality and performance of silicon chips used for large-scale integrated circuits. As the size of the crystal ingot increases, the difficulty in designing the temperature field required for the growth of the crystal ingot increases, the difficulty and cost of manufacturing a single crystal silicon growth furnace increase significantly, and the growth cycle and cost of single crystal silicon increase significantly. [0003] The growth of semiconductor single crystal silicon mainly adopts the Czochralski me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B15/00C30B29/06
Inventor 李秦霖宋洪伟
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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