Cleaning method for removing metal pollution or residuals of SiC epitaxial wafer
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of epitaxial wafers and metals, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing breakdown voltage, shortening the lifetime of minority carriers, affecting the reliability of semiconductor device performance, and device yield, so as to prevent Secondary contamination, reduction of re-contamination by metals, and prevention of adsorption of secondary pollutants
Active Publication Date: 2017-06-30
DONGGUAN TIANYU SEMICON TECH
View PDF5 Cites 13 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0007] During the manufacturing process of semiconductor devices, the cleanliness of semiconductor materials has an important impact on the performance and yield of the devices, while metal contamination or residues will shorten the minority carrier lifetime, reduce the breakdown voltage and other consequences, affecting the reliability and performance of semiconductor devices. Device Yield
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0042] combine figure 1 As shown, this embodiment one uses steps a, b, c, d, and g in the above-mentioned cleaning method for removing metal contamination or residues on SiC epitaxial wafers, and the test results of two samples in this embodiment one show: Calcium (Ca) residue The minimum value is 3.241E+11atom / cm 2 , the maximum value is 1.1623E+12atom / cm 2 ; The minimum iron (Fe) residue is 1.58E+10atom / cm 2 , the maximum value is 6.74E+10atom / cm 2 ; The minimum zinc (Zn) residue is 5.53E+10atom / cm 2 , the maximum value is 1.281E+11atom / cm 2 ;The residual content of other metal elements is less than 5E+10atom / cm 2 , see the test value image 3 .
Embodiment 2
[0044] combine figure 2 As shown, the present embodiment 2 uses steps a, b, c, d, e, f, and g in the above-mentioned cleaning method for removing metal contamination or residue on SiC epitaxial wafers. The test results of the two samples in the present embodiment 2 show: the sample 04 (Sample 04) The content of potassium (K) and calcium (Ca) in the central point is relatively high, and the other test points are all less than 5E+10atom / cm 2 ; The minimum iron (Fe) residue is less than 0.45E+10atom / cm 2 , the maximum value is 0.88E+10atom / cm 2 ; The minimum residual amount of zinc (Zn) is less than 0.21E+10atom / cm 2 , the maximum value is 1.41E+10atom / cm 2 ;The residual content of other metal elements is less than 2E+10atom / cm 2 , see the test value Figure 4 .
[0045] Embodiment 2 has a better effect of removing metal pollution or residue, and the result meets the material requirements of the semiconductor industry.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses a cleaning method for removing metal pollution or residuals of a SiC epitaxial wafer, and the method comprises the following steps: a, putting the SiC epitaxial wafer in mixed washing liquor, formed by the mixing of sulfuric acid and hydrogen peroxide, for immersing; b, cleaning the surface of the SiC epitaxial wafer through deionized water, and then putting the SiC epitaxial wafer in acetone for ultrasonic cleaning; c, cleaning the surface of the SiC epitaxial wafer through deionized water, and then putting the SiC epitaxial wafer in heated mixed washing liquor, formed by the mixing of ammonia water, hydrogen peroxide and deionized water, for immersing; d, , cleaning the surface of the SiC epitaxial wafer through deionized water, and then putting the SiC epitaxial wafer in heated mixed washing liquor, formed by the mixing of hydrochloric acid, hydrogen peroxide and deionized water, for immersing; e, sequentially cleaning the surface of the SiC epitaxial wafer through ozone water, ammonia water, high-purity nitrogen and deionized water; f, sequentially cleaning the surface of the SiC epitaxial wafer through ozone water, hydrofluoric acid liquor and ozone water; g, cleaning the surface of the SiC epitaxial wafer through deionized water, and rotating the SiC epitaxial wafer at a high speed for drying.
Description
[0001] Technical field: [0002] The invention relates to the technical field of semiconductors, in particular to a cleaning method for removing metal pollution or residues on SiC epitaxial wafers. [0003] Background technique: [0004] Silicon carbide (SiC) is an important wide-bandgap semiconductor material. SiC is a new generation (third-generation) wide-bandgap semiconductor material with excellent performance. It is a typical representative of the third-generation semiconductor material. It is one of the wide-bandgap semiconductor materials with the most mature technology and device manufacturing level and the most widely used. It is an ideal semiconductor material for high-temperature, high-frequency, radiation-resistant, and high-power applications. SiC semiconductor materials have outstanding advantages such as wide band gap, high saturation drift velocity, high thermal conductivity, and high critical breakdown electric field, and are especially suitable for making hig...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more