Ferroelectric field-effect transistor and preparation method thereof

Abstract

The invention discloses a ferroelectric field-effect transistor, which comprises a substrate; a source electrode region formed on the substrate; a drain electrode region formed on the substrate and separated from the source electrode region; an insulation layer formed on the substrate and between the source electrode region and the drain electrode region; a ferroelectric film layer formed on the insulation layer; a gate electrode formed on the ferroelectric film layer; a source electrode formed on the source electrode region; and a drain electrode formed on the drain electrode region. By introducing a hafnium-oxide-based material to the transistor to serve as a gate medium material of the transistor, and HfN as the insulation layer, the transistor is allowed to be compatible with the existing silicon process in the preparation process, and can realize low power consumption, reduce leakage current and realize long-time retentivity; and the ferroelectric field-effect transistor can be widely applied to high-performance and low-power-consumption large-scale storage integrated circuits.

Description

technical field [0001] The invention relates to a transistor and a preparation method thereof, in particular to a ferroelectric field effect transistor and a preparation method thereof. Background technique [0002] The electronic information industry plays an extremely important role in expanding social employment, promoting economic growth, enhancing international competitiveness and maintaining national security. Memory, as the cornerstone of information computing and storage, shoulders the important task of information security in various countries. The new materials, new structures and new processes required for its development have always been listed as key development targets by various semiconductor powers. Ferroelectric memory is one of the most potential new types of memory. It uses ferroelectric film as a storage medium and is a non-volatile memory made by integrating microelectronics technology with semiconductors. Compared with traditional memory such as Flash,...

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Problems solved by technology

However, the main problems of traditional ferroelectric memory are: (1) the storage density of FeRAM is low, and the current maximum capacity is 128Mbit; (2) it is not compatible with the silicon process platform; It contains highly chemically active heavy metal ions, and heavy metal ions are a fatal source of pollution that leads to the failure of integrated circuits; on the other hand, the preparation temperature of traditional ferroelectric thin films is high, whi...

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