Method for improving photoelectric properties of aluminum-doped zinc oxide film through femtosecond lasers

Abstract

The invention provides a method for improving photoelectric properties of an aluminum-doped zinc oxide (AZO) film through femtosecond lasers based on electronic dynamic control and belongs to the technical field of functional materials. The method for improving the photoelectric properties of the AZO film through the femtosecond lasers is based on a femtosecond laser micro-nanometer fabrication system and comprises the following steps that after being cleaned, an AZO deposition substrate sample is placed in a femtosecond laser micro fabrication laser path, femtosecond lasers generated by a femtosecond laser device are concentrated by an objective lens to an aluminum oxide material, and through adjustment of the energy and the repetition frequency of the femtosecond lasers, the displacement speed of the substrate sample and other parameters, the processed morphology on the surface of the sample is controlled. Compared with the prior art, the method for improving the photoelectric properties of the AZO film through the femtosecond lasers can repair surface defects of AZO, reduce the sheet resistance of the material and improve the conductivity of the material; and meanwhile, the processed morphology generated on the surface of the sample can lower the reflectivity of the surface, light absorption is enhanced when the AZO is applied to solar cells, and the photoelectric efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of functional materials, and specifically relates to a method for improving the photoelectric performance of an aluminum-doped zinc oxide thin film based on electronic dynamic control of a femtosecond laser. Background technique [0002] With the development of optoelectronic devices, transparent conductive oxide films are widely used in optoelectronic devices such as solar cells, displays, and LEDs due to their good electrical conductivity and high light transmittance in the visible light region. At present, indium tin oxide (ITO) is the most widely used element, but indium element is a rare element with low storage capacity and high cost. Aluminum-doped zinc oxide (AZO) is easy to obtain raw materials, cheap to manufacture and non-toxic. The stability in the plasma is superior to the stability of ITO in the hydrogen plasma and other advantages, gradually becoming a substitute for ITO and becoming a new typ...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of large sheet resistance and surface reflection of aluminum-doped zinc oxide, and to provide a method for improving the photoelectric performance of aluminum-doped zinc oxide thin film based on electronic dynamic regulation of femtosecond laser. The material properties of Al-doped ZnO thin film are stable

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