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P-type indium phosphide single crystal preparation formula and preparation method

A technology of indium phosphide and single crystal, which is applied in the field of preparation formula and preparation of P-type indium phosphide single crystal, which can solve the problems of single crystal difficulty and high twinning frequency, and achieve uniform electrical parameters, small residual stress and dislocation density low effect

Active Publication Date: 2017-11-03
TAISHAN HUAXING PHOTOELECTRIC TECH CO LTD
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Problems solved by technology

In particular, when crystals are grown under a low temperature gradient using the vertical boat method such as the VGF method and the vertical Bridgman method (VB method) in which crystals are grown in a container, the frequency of twin crystal formation is high, so it is extremely difficult to obtain a single crystal

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  • P-type indium phosphide single crystal preparation formula and preparation method

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Embodiment 1

[0016] Embodiment 1: Production of 100 grams of P-type indium phosphide single crystal

[0017] The raw materials are composed of: 99.5 grams of InP polycrystalline material, 0.2-0.8 grams of elemental zinc, more than 32 grams of diboron trioxide and red phosphorus, and the amount of phosphorus is calculated according to the ideal gas state equation, wherein the pressure is controlled at 2.7-3.5 MPa, the temperature is controlled at 1062-1100°C, and the InP polycrystalline material is boiled and washed with deionized water several times to remove oxides and residual impurities on the surface; the diboron trioxide is high-purity dehydrated diboron trioxide , the water content of boron trioxide after dehydration is on the order of 500ppm; the red phosphorus reaches 6N purity; the zinc reaches 6N purity.

[0018] The growth method of the indium phosphide single crystal comprises the following steps: using the vertical temperature gradient solidification method, loading the InP se...

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Abstract

The invention discloses a P-type indium phosphide single crystal preparation formula and a preparation method. The formula comprises the following raw materials by 100g of P-type indium phosphide single crystal: 99.5g of an InP polycrystal material, 0.2-0.8g of metallic zinc, not less than 32g of diboron trioxide, and red phosphorus, wherein the amount of the red phosphorus is calculated according to ideal gas state equations; the pressure is controlled to 2.7-3.5MPa; the temperature is controlled to 1062-1100 DEG C. By strictly controlling chemical proportions and establishing a good thermal field, the radial temperature gradient and the longitudinal temperature gradient inside a melt are relatively reasonable, and P-type indium phosphide single crystal which is small in residual stress, low in displacement density, uniform in electric parameter and high in quality is generated.

Description

Technical field: [0001] The invention relates to the technical field of semiconductor materials, in particular to a preparation formula and a preparation method of a P-type indium phosphide single crystal. Background technique: [0002] Indium phosphide (InP) is one of the important III-V compound semiconductor materials, and it is a new generation of electronic functional materials after silicon and gallium arsenide. Compared with gallium arsenide (GaAs), its advantages mainly lie in high saturation electric field drift speed, good thermal conductivity and strong radiation resistance, so InP wafers are usually used in the manufacture of new microelectronics and optoelectronic components. [0003] According to the electrical properties, InP single crystal materials are mainly divided into sulfur-doped N-type InP; zinc-doped P-type InP; iron-doped or non-doped annealed semi-insulating InP single crystal. N-type InP single crystals are used in optoelectronic devices, and InP-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B11/02
CPCC30B11/02C30B29/40
Inventor 关活明
Owner TAISHAN HUAXING PHOTOELECTRIC TECH CO LTD
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