Preparation method of copper-zinc-tin-sulfur solar battery absorption layer thin film
A technology of solar cells and copper-zinc-tin-sulfur, which is used in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of randomness in the preparation process, easy generation of secondary phases, defect states, etc., and shorten the sputtering deposition time. The effect of fast sputtering rate
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0032] The invention provides a method for preparing an absorbing layer film of a copper-zinc-tin-sulfur solar cell, comprising the following steps:
[0033] A) sequentially sputtering Zn, Sn and Cu on the substrate, repeating this process 2 to 5 times to obtain a precursor;
[0034] B) The precursor is subjected to sulfidation treatment to obtain a copper-zinc-tin-sulfur solar cell absorber film.
[0035] The preparation process in the present invention is as figure 1 as shown, figure 1 It is the preparation process of the absorption layer thin film of the copper zinc tin sulfur solar cell of the present invention.
[0036] In the present invention, the substrate is preferably cleaned first, and then sputtering is performed on the cleaned substrate. The present invention successively adopts acetone, absolute ethanol and deionized water to clean the substrate for 15 minutes, and use N 2 Blow dry and set aside. In the present invention, the substrate is preferably a molybd...
Embodiment 1
[0047] Molybdenum-coated soda-lime glass was selected as the substrate, and the substrate was ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 15 minutes, and then washed with N 2 Blow dry and set aside. Put the substrate into the magnetron sputtering vacuum chamber, and evacuate the vacuum chamber to the background vacuum degree of 4×10 -4 Pa, and then introduce high-purity Ar as the working gas, the Ar flow rate is 20mL / min, and the working pressure is 0.5Pa; before the formal coating, each target is pre-sputtered for 5 minutes to remove the impurities on the target surface; sputtering coating, the number of sputtering cycles is 2, in each sputtering cycle, the sputtering sequence is Zn / Sn / Cu, the sputtering power of Zn, Sn, Cu is 50W, 50W, 40W respectively, Zn, Sn The sputtering times of Cu and Cu are 46s, 780s and 270s, respectively, and the periodic metal stack precursor is prepared in this way. Among the precursors, the total sputter depos...
Embodiment 2
[0050] Molybdenum-coated soda-lime glass was selected as the substrate, and the substrate was ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 15 minutes, and then washed with N 2 Blow dry and set aside. Put the substrate into the magnetron sputtering vacuum chamber, and evacuate the vacuum chamber to the background vacuum degree of 4×10 -4 Pa, and then introduce high-purity Ar as the working gas, the Ar flow rate is 20mL / min, and the working pressure is 0.5Pa; before the formal coating, each target is pre-sputtered for 5 minutes to remove the impurities on the target surface; sputtering coating, the number of sputtering cycles is 4, in each sputtering cycle, the sputtering sequence is Zn / Sn / Cu, the sputtering power of Zn, Sn, Cu is 50W, 50W, 40W respectively, Zn, Sn The sputtering times of Cu and Cu are 23s, 390s, and 135s, respectively, so that the periodic metal stack precursor is prepared. Among the precursors, the total sputter deposition t...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More