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Planting method of silicon-rich radishes

A planting method and technology of radish, applied in the field of planting of silicon-rich radish, can solve the problems of inability to increase the selenium content of plants, lack of sales of silicon-rich radish, affecting the absorption rate, etc., so as to improve the rate of photosynthesis, reduce blood lipids, cholesterol and arteries Lipids, the effect of reducing the rate of transpiration

Inactive Publication Date: 2018-01-12
广州市汇盛金丰科技企业孵化器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there is no report about silicon-rich radish in the prior art, and there is no sale of silicon-rich radish on the market. Other selenium-rich products mostly increase the selenium content of plants by spraying sodium selenite solution, but if plant nutrition Insufficient supply will affect the rate of absorption and will not improve the selenium content of the plant

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A method for planting silicon-rich radish, comprising the following steps:

[0030] (1) Field selection and fertilization: Select soil rich in humus, deep soil layer, good water retention and drainage, loose and breathable sandy loam, and apply 2000 parts of decomposed organic fertilizer, 40 parts of compound fertilizer, and 40 parts of cake fertilizer per mu of land;

[0031] (2) Sowing: evenly spread the seeds treated with phoxim on the land, cover soil after sowing, cover with ash fertilizer, and keep moist by watering;

[0032] (3) thinning and fixing seedlings: once the cotyledons are fully expanded, the seedlings are thinned once when they grow to 2-3 true leaves, and the seedlings are fixed when they grow to 5-6 leaves;

[0033] (4) Top dressing and watering: in the germination stage of the seeds, fully water and organic silicon solution to make the soil water content 80%, in the seedling stage, water to 60% of the soil water content, and in the leaf growth stage...

Embodiment 2

[0044] A method for planting silicon-rich radish, comprising the following steps:

[0045] (1) Field selection and fertilization: Select soil rich in humus, deep soil layer, good water retention and drainage, loose and breathable sandy loam, and apply 2,300 parts of decomposed organic fertilizer, 45 parts of compound fertilizer, and 45 parts of cake fertilizer per mu of land;

[0046] (2) Sowing: evenly spread the seeds treated with phoxim on the land, cover soil after sowing, cover with ash fertilizer, and keep moist by watering;

[0047] (3) thinning and fixing seedlings: once the cotyledons are fully expanded, the seedlings are thinned once when they grow to 2-3 true leaves, and the seedlings are fixed when they grow to 5-6 leaves;

[0048] (4) Top dressing and watering: in the germination stage of the seeds, fully water and organic silicon solution to make the soil water content 83%, in the seedling stage, water to 63% of the soil water content, in the leaf growth stage, w...

Embodiment 3

[0059] A method for planting silicon-rich radish, comprising the following steps:

[0060] (1) Field selection and fertilization: Select soil rich in humus, deep soil layer, good water retention and drainage, loose and breathable sandy loam, and apply 2,500 parts of decomposed organic fertilizer, 50 parts of compound fertilizer, and 50 parts of cake fertilizer per mu of land;

[0061] (2) Sowing: evenly spread the seeds treated with phoxim on the land, cover soil after sowing, cover with ash fertilizer, and keep moist by watering;

[0062] (3) thinning and fixing seedlings: once the cotyledons are fully expanded, the seedlings are thinned once when they grow to 2-3 true leaves, and the seedlings are fixed when they grow to 5-6 leaves;

[0063] (4) Top dressing and watering: in the germination stage of the seeds, fully water and organic silicon solution to make the soil water content 85%, in the seedling stage, water to 65% of the soil water content, in the leaf growth stage, w...

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Abstract

The invention discloses a planting method of silicon-rich radishes. Before planting, humic organic fertilizer, compound fertilizer and cake fertilizer are applied on soil, in the growing period of plants, nutrient solution which contains silicon is sprayed and applied onto the plants, and foliage fertilization is conducted. The preparation method of the humic organic fertilizer comprises the stepsthat mango stalks, arundinaria amabilis and peanut shells are mixed, smashed and added to livestock manure, the mixture is stirred evenly and drenched with water till the water content is 50-70%, andis covered with plastic thin film and subjected to stacking fermentation for 20-30 days, after fermentation is completed, the mixture is exposed to the sun, sterilized and disinfected. According to foliage fertilization, nitrogen fertilizer, potassic fertilizer, borax and silicon fertilizer are applied, wherein the silicon fertilizer is efficient water soluble silicone fertilizer, and the contentof water soluble silicon dioxide is 50%.

Description

technical field [0001] The invention relates to the technical field of vegetable and fruit planting, in particular to a planting method of silicon-rich radish. Background technique [0002] Radish is cool in nature, pungent and sweet in taste, and has the effects of eliminating stagnation, resolving phlegm and clearing heat, widening the lower qi and detoxifying. The main components of radish are protein, carbohydrates, B vitamins and a lot of vitamin C, as well as iron, calcium, phosphorus and fiber, mustard oil and amylase. According to the determination, the vitamin C content of radish is nearly 10 times higher than that of apples, pears and other fruits. Radish is an authentic health food, which can promote metabolism, increase appetite, help digestion, and can reduce stagnation. Blood lipids, soften blood vessels, stabilize blood pressure, and prevent coronary heart disease, arteriosclerosis, cholelithiasis and other diseases. [0003] At present, there is no report ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A01G22/25A01B79/02A01C21/00C05G3/02C05F17/00C05G3/60
CPCY02W30/40
Inventor 冯国文黎幸连
Owner 广州市汇盛金丰科技企业孵化器有限公司
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