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Preparation method of tl-1223 superconducting thin film

A technology of tl-1223 and superconducting thin films, which is applied in the usage of superconducting elements, superconducting devices, superconducting/high-conducting conductors, etc., can solve the problem of difficult preparation of Tl-1223 thin films and high consumption of thallium source burning target , low experimental repeatability and other problems, to achieve the effect of shortening the heating and cooling time and constant temperature time, short preparation time and simple process

Active Publication Date: 2019-07-26
GUANGXI TEACHERS EDUCATION UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This sintering method has the disadvantages of high sintering temperature, long sintering time, large consumption of thallium source and burning target, high cost, low experimental repeatability, etc., and it is difficult to prepare pure phase Tl-1223 thin film

Method used

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  • Preparation method of tl-1223 superconducting thin film
  • Preparation method of tl-1223 superconducting thin film
  • Preparation method of tl-1223 superconducting thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A kind of preparation method of Tl-1223 superconducting thin film, the substrate is CeO 2 / Sapphire, including:

[0036] Step 1. Use the sol-gel method to prepare the amorphous precursor film containing thallium: the acetate salt of thallium, barium, calcium and copper is used as the starting material, and propionic acid, lactic acid, diethylenetriamine, methanol, etc. are used as the starting material. A complexing agent and a solvent are used to prepare a sol; this sol has CeO 2 A gel film is prepared on the sapphire substrate of the isolation layer, and a precursor film is obtained through a drying and thermal decomposition process. The molar ratio of Tl, Ba, Ca, and Cu in the obtained precursor film is 1.2:2:2:3.2;

[0037] Step 2: Prepare a thallium-containing co-firing target: BaO with a metal ion molar ratio of Ba:Ca:Cu=2:2:3 2 , CaO and CuO are mixed and ground as starting materials, kept at a constant temperature of 890-940 °C for 4 hours in a flowing oxygen ...

Embodiment 2

[0042] A kind of preparation method of Tl-1223 superconducting thin film, the substrate is CeO 2 / Sapphire, including:

[0043] Step 1. Use the sol-gel method to prepare the amorphous precursor film containing thallium: the acetate salt of thallium, barium, calcium and copper is used as the starting material, and propionic acid, lactic acid, diethylenetriamine, methanol, etc. are used as the starting material. A complexing agent and a solvent are used to prepare a sol; this sol has CeO 2 A gel film is prepared on the sapphire substrate of the isolation layer, and a precursor film is obtained through drying and thermal decomposition processes, and the molar ratio of metal ions of Tl, Ba, Ca, and Cu in the obtained precursor film is 2.5:2:2:3.6;

[0044] Step 2: Prepare a thallium-containing co-firing target: BaO with a metal ion molar ratio of Ba:Ca:Cu=2:2:3 2 , CaO and CuO are mixed and ground as starting materials, kept at a constant temperature of 890-940 °C for 8 hours in...

Embodiment 3

[0049] A preparation method of Tl-1223 superconducting thin film, the substrate is lanthanum aluminate, comprising:

[0050] Step 1. Preparation of thallium-containing amorphous precursor film: BaO with a metal ion molar ratio of Ba:Ca:Cu=2.5:2:3.4 2 or BaO, CaO or CaCO 3 Mix and grind with CuO as starting material, keep constant temperature at 890~940℃ in flowing oxygen environment for 6h, add Tl 2 O 3 Mix, grind and press to make the molar ratio of Tl and Ca to be Tl:Ca=1.7:2, put them in a sealed crucible, put them together in a sealed quartz tube, keep the constant temperature at 890-940°C for 6h in a flowing oxygen environment, and cool them down. Then, a sputtering target is obtained; radio frequency magnetron sputtering is used for the sputtering target, and the sputtering gas is high-purity Ar, or Ar / O 2 Mixed gas, the sputtering pressure is 2-7Pa, and the sputtering power is 45W; the molar ratio of metal ions of Tl, Ba, Ca, and Cu in the obtained precursor film is ...

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Abstract

The invention discloses a method of preparing a Tl-1223 superconductive thin film. In the invention, a thallium-containing amorphous precursor film and a thallium-containing sintering accompanying target are sealed and coated with a silver foil or a gold foil, and then sintering is carried out in a sealed argon gas or a flowing oxygen environment. In the method, phase forming temperature zone of low-temperature phases, such as Tl-1212 and Tl-2212, can be crossed quickly and Tl-1223 superconductive phase temperature zone is directly reached, thus producing a pure-phase thin film. The method isshort in temperature increase / decrease time and constant temperature time and is low in production cost.

Description

technical field [0001] The invention relates to the field of thallium-based superconducting thin film materials. More specifically, the present invention relates to a preparation method of Tl-1223 superconducting thin film. Background technique [0002] TlBa 2 Ca 2 Cu 3 O 9 (Tl-1223) superconductor is a crystal structure of a single Tl-O layer with strong magnetic flux pinning. Its performance under strong magnetic field is similar to that of YBCO material, and it still maintains good transmission performance, and the transition temperature is high (125K). ), is a material that can realize superconducting power transmission in the liquefied natural gas temperature region, and has great potential value in the field of weak and strong electricity. [0003] In the current research on the synthesis of Tl-1223 thin films, the main methods for preparing precursor films include MOCVD, screen-printing method, pulsed laser deposition, magnetron sputtering, ultrasonic spray pyrol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/45C04B35/622C04B35/64C04B37/00H01B12/00
CPCY02E40/60
Inventor 谢清连蒋艳玲唐平英刘丽芹黄佳陈名贤黄国华
Owner GUANGXI TEACHERS EDUCATION UNIV
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