An annealing method for recovering the true resistivity of ntd zone molten single crystal silicon

A single crystal silicon and resistivity technology, applied in chemical instruments and methods, crystal growth, after treatment, etc., can solve the problems of unstable resistivity and low lifetime of minority carriers, and achieve the effect of good resistivity

Active Publication Date: 2020-06-16
HEBEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide an annealing method for recovering the true resistivity of the molten silicon single crystal in the NTD area, to prevent the unstable situation of the resistivity due to multiple heat treatments during the production and processing of the molten silicon single crystal in the NTD area, and at the same time It can better improve the low minority carrier lifetime of NTD zone melting single crystal silicon

Method used

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  • An annealing method for recovering the true resistivity of ntd zone molten single crystal silicon
  • An annealing method for recovering the true resistivity of ntd zone molten single crystal silicon
  • An annealing method for recovering the true resistivity of ntd zone molten single crystal silicon

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Embodiment 1

[0030] 1. Put the zone-melted single crystal silicon doped by neutron irradiation into the pickling solution (the volume ratio is HF:HNO 3 =1:6), pickling for 5 minutes, then rinsed with deionized water for 3 times, and dried;

[0031] 2. Put the cleaned single crystal silicon into the prepared passivation agent (ethanol solution of phosphorus pentoxide, the mass concentration is 5g / L), passivate for 5min, and then dry the single crystal;

[0032] 3. Put the passivated silicon single crystal into the quartz tube of the annealing furnace fed with nitrogen (the flow rate of nitrogen is 4L / min), heat up from room temperature to 1000°C at a rate of 20°C / min, keep it warm for 2mim, and then Cool down to 550°C at a rate of 20°C, close the nitrogen flow valve, and keep warm for 5 minutes;

[0033] 4. Open the oxygen flow valve, control the flow at 2L / min, raise the temperature from 550°C to 800°C at a rate of 4°C / min, and keep warm for 3 hours; then cool down from 800°C to 700°C at ...

Embodiment 2

[0036] 1. Put the zone-melted single crystal silicon doped by neutron irradiation into the pickling solution (the volume ratio is HF:HNO 3 =1:6), pickling for 5 minutes, then rinsed with deionized water for 3 times, and dried;

[0037] 2. Put the cleaned single crystal silicon into the prepared passivation agent (ethanol solution of phosphorus pentoxide, the mass concentration is 5g / L), passivate for 5min, and then dry the single crystal;

[0038] 3. Put the passivated silicon single crystal into the quartz tube of the annealing furnace fed with nitrogen (the flow rate of nitrogen is 6L / min), raise the temperature from room temperature to 1100°C at a rate of 25°C / min, keep it warm for 5mim, and then Cool down to 650°C at a rate of 25°C, close the nitrogen flow valve, and keep warm for 10 minutes;

[0039] 4. Open the oxygen flow valve, control the flow at 4L / min, raise the temperature from 650°C to 900°C at a rate of 3°C / min, and keep it for 5 hours; then cool it down from 90...

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Abstract

The invention discloses an annealing method capable of recovering the real resistivity of NTD (neutron transmutation doping) zone-melting monocrystalline silicon. The method includes the steps A, performing corrosion and surface cleaning on the zone-melting silicon single crystals after neutron transmutation doping; B, performing surface passivation on the cleaned zone-melting silicon single crystals; C, loading the passivated zone-melting silicon single crystals into an annealing furnace quartz tube under nitrogen atmosphere, and performing fast annealing; D, closing a nitrogen flow valve, opening an oxygen flow valve, and performing annealing on the single crystals; E, closing the oxygen flow valve, taking out the silicon single crystals from the quartz tube, pickling to remove an oxidelayer, performing sand blasting to test single crystal resistivity and minority carrier lifetime. The annealing method has the advantages that the real resistivity of the NTD zone-melting silicon single crystals annealed by the method can be reflected effectively, the resistivity of the single crystals does not change evidently through multiple times of annealing, and the minority carrier lifetimeof the single crystals is prolonged evidently.

Description

technical field [0001] The invention belongs to the field of preparation of NTD zone melting single crystal silicon, and specifically relates to an annealing method for recovering the true resistivity of NTD zone melting single crystal silicon. Background technique [0002] The demand for high-power devices represented by IGBT continues to increase, forcing us to put forward stricter requirements for the production of high-quality, high-uniformity doped single crystal silicon. Zone-melted single crystal silicon has become the material of choice for power electronic devices due to its advantages of zero dislocation and low oxygen and carbon content. Neutron radiation doping (NTD) technology, with its unique uniformity and high precision, is applied to zone melting single crystal silicon, which provides a good material for the preparation of high-power devices. In the development process of high-uniformity and high-precision NTD zone melting single crystal silicon, some probl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02
Inventor 肖武坤刘巍张辉罗文博解新建张雪囡陈贵锋
Owner HEBEI UNIV OF TECH
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