Ka-band SiGe BiCMOS radio frequency power amplifier

Abstract

The present invention discloses a Ka-band SiGe BiCMOS radio frequency power amplifier. The radio frequency power amplifier comprises an input matching network, a front stage gain amplification circuit, an inter-stage matching network, a post stage power amplification circuit and an impedance transformation network which are connected sequentially; the front stage gain amplification circuit and thepost stage power amplification circuit comprise SiGe BiCMOS; the input ends of the front stage gain amplification circuit and the post stage power amplification circuit are respectively connected with a first biasing circuit and a second biasing circuit. The employment of two-stage amplification and the SiGe BiCMOS as an amplifier tube is able to meet the high efficiency to achieve sufficient gain and output power to solve the problems such as poor performance of CMOS, and high cost and large volume of III-V semiconductors. The radio frequency power amplifier has high characteristic frequencyand noise characteristics, and is more conducive to integration.

Description

technical field [0001] The invention relates to the field of radio frequency power amplifiers, in particular to a Ka-band SiGe BiCMOS radio frequency power amplifier. Background technique [0002] The radio frequency power amplifier is an indispensable and important part of the wireless transmitter. It is mainly used to amplify the power of the modulated signal of the transmitter in the wireless communication to meet the power demand of the radio frequency signal of the wireless communication. Its working bandwidth, output Performances such as power and additional efficiency seriously affect the quality of wireless communication systems. [0003] Such as figure 1 As mentioned above, the existing radio frequency power amplifier is realized by using NMOS devices, that is, it can be realized by using CMOS technology. With the advancement of CMOS technology, the high-frequency performance of CMOS devices has been improved, which has also improved the high-frequency performance...

AI Technical Summary

Problems solved by technology

But at the same time, it also brings some difficulties to the RF power amplifier, such as the breakdown voltage of the oxide layer of the CMOS device is too low, the current driving ability is poor, and the substrate coupling is serious, etc.

In addition, the performance of on-chip passive devices is poor, especially the Q value of on-chip inductors is too low, which seriously affects the performance of power amplifiers. Therefore, components such as inductors often use off-chip methods, that is, the passive devices of RF power amplifiers implemented by existing CMOS processes such as Inductors and active devices such as CMOS devices often cannot be formed on the same chip, that is, the full chip integration of the entire RF power amplifier cannot be realized

Since the inductor needs to be manufactured off-chip, compared with a fully integrated RF power amplifier in which all components are integrated on the same chip, the cost of the existing RF power amplifier will be high and the application is inconvenient

[0004] except as figure 1 In addition to the RF power amplifiers realized by the existing CMOS process shown, the existing RF power amplifiers are also implemented by using gallium arsenide heterojunction bipolar transistors. Although GaAs HBTs have better performance, they cannot be integrated with silicon processes; In the field of semiconductor manufacturing, only silicon-based devices can achieve large-scale manufacturing, and GaAs cannot be integrated with silicon processes, so the cost is very high

[0005] In response to the urgent demand for general-purpose modules such as Ka-band millimeter-wave power amplifiers in communication systems, on the one hand, the existing industry-widely used millimeter-wave power amplifier chips based on III-V semiconductor technology are expensive, which limits their large-scale use

At the same time, III-V chips have disadvantages such as large size, complicated process and difficulty in integration.

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