Preparation method of large-sized compact silicon carbide ceramic plate

A large-scale technology of silicon carbide ceramics, applied in the field of silicon carbide ceramics, can solve the problems of easy cracking, uneven density, poor compactness, etc., and achieve the effects of improving production efficiency, ensuring sintering quality, and increasing density

Active Publication Date: 2018-02-09
WEIFANG HUAMEI FINE TECHN CERAMICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to its ultra-long, ultra-wide, and ultra-thick structural characteristics, the preparation of large-scale silicon carbide ceramic plates encounters technical obstacles such as formulat

Method used

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  • Preparation method of large-sized compact silicon carbide ceramic plate
  • Preparation method of large-sized compact silicon carbide ceramic plate

Examples

Experimental program
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Example Embodiment

[0021] Example 1

[0022] The following method is used to prepare a silicon carbide ceramic plate with a length×width×thickness of 600mm×400mm×40mm, including the following steps:

[0023] 1) Mixing Mix 1 part by weight of graphite powder with a purity of 99.8-99.9% and 25 parts by weight of silicon carbide powder with a purity of 99.8-99.9%, and then add 2 parts by weight of zinc stearate and 15 parts by weight. The polyvinyl alcohol, stir evenly to obtain the mixture;

[0024] 2) Spray granulation: A centrifugal spray dryer is used to spray granulate the mixture to obtain granulated powder;

[0025] 3) Hot press molding: Put the prepared granulated powder into a metal mold, use a 500-600T hot press, pressurize and unpress 4 times under the conditions of a temperature of 180°C and a pressure of 35MPa, to obtain a hot press molded plate 的体体;

[0026] 4) Humidification and drying: Place the molded body in a humidification and drying equipment, and slowly humidify and dry for 100 hours a...

Example Embodiment

[0030] Example 2

[0031] Use the following method to prepare a silicon carbide ceramic plate with a length × width × thickness of 700 mm × 500 mm × 50 mm, including the following steps:

[0032] 1) Mixing 1.4 parts by weight of graphite powder with a purity of 99.8-99.9% and 28 parts by weight of silicon carbide powder with a purity of 99.8-99.9% are mixed, and then 3 parts by weight of zinc stearate and 18 parts by weight are added to it The polyvinyl alcohol, stir evenly to obtain the mixture;

[0033] 2) Spray granulation: A centrifugal spray dryer is used to spray granulate the mixture to obtain granulated powder;

[0034] 3) Hot press molding. Put the prepared granulated powder into a metal mold, use a 500-600T hot press, pressurize and unpress 5 times under the conditions of a temperature of 190℃ and a pressure of 45MPa, and obtain a hot press molded plate 的体体;

[0035] 4) Humidification and drying: Place the molded body in a humidification and drying equipment, and slowly humid...

Example Embodiment

[0039] Example 3

[0040] The following method is used to prepare a silicon carbide ceramic plate with a length×width×thickness of 800mm×600mm×60mm, including the following steps:

[0041] 1) Mixing mix 2 parts by weight of graphite powder with a purity of 99.8-99.9% and 30 parts by weight of silicon carbide powder with a purity of 99.8-99.9%, and then add 4 parts by weight of zinc stearate and 20 parts by weight. The polyvinyl alcohol, stir evenly to obtain the mixture;

[0042] 2) Spray granulation: A centrifugal spray dryer is used to spray granulate the mixture to obtain granulated powder;

[0043] 3) Hot press molding: Put the prepared granulated powder into a metal mold, and use a 500-600T hot press at a temperature of 200°C and a pressure of 55 MPa to press and release the pressure to obtain a blank for hot press molding. body;

[0044] 4) Humidification and drying: Place the molded body in a humidification and drying equipment, and slowly humidify and dry for 120 hours at a te...

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Abstract

The invention discloses a preparation method of a large-sized compact silicon carbide ceramic plate, and relates to the technical field of reaction sintering silicon carbide ceramics. The preparationmethod comprises the steps of mixing raw materials, carrying out spray granulation, carrying out hot-press forming, humidifying and drying, processing, drying at high temperature and carrying out reactive sintering; a super-conventional silicon carbide ratio is used, humidifying and drying are carried out after the spray granulation and the hot-press forming; during the reactive sintering, siliconpowder is added, and an oxygen-free environment is maintained, wherein the adding amount of the silicon powder is 200-300% of the weight of a blank body, so that the sintered silicon carbide ceramicplate is enabled not to crack and to be compact, uniform in density and high in yield; the preparation method overcomes the technical obstacles in a sintering process of large-sized silicon carbide ceramic plates which have the lengths of 600-800mm, the widths of 400-600mm and the thicknesses of 40-60mm, fills the domestic gap, successfully substitutes for imported goods, and lowers the use cost of the application field.

Description

technical field [0001] The invention relates to a method for preparing a silicon carbide ceramic plate, in particular to a method for preparing a large-scale dense silicon carbide ceramic plate with a length of 600-800 mm, a width of 400-600 mm, and a thickness of 40-60 mm, belonging to silicon carbide ceramics technology field. Background technique [0002] Silicon carbide ceramics have excellent characteristics such as high temperature strength, strong oxidation resistance, good wear resistance, good thermal stability, small thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance and chemical corrosion resistance. The performance (strength, creep resistance, etc.) is the best among known ceramic materials, so it has been used more and more widely. role, and has received increasing attention. [0003] According to different industrial fields and different working conditions, silicon carbide materials can be used to make different ...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/65
CPCC04B35/573C04B2235/425C04B2235/428C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/658C04B2235/6581C04B2235/96
Inventor 王明峰亓锡云王明祥石威
Owner WEIFANG HUAMEI FINE TECHN CERAMICS
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