Semiconductor device, method for making the same, and electronic device

Abstract

The invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The manufacturing method includes: providing a semiconductor substrate, the semiconductor substrate including a low-voltage device area, a high-voltage device area, and a core device area. Forming a dummy gate oxide layer and a dummy gate in the region and the core device region, and an interlayer dielectric layer surrounding the dummy gate oxide layer and the dummy gate; removing the dummy gate in the high-voltage device region to form a first opening, and forming an additional oxide layer on the dummy gate oxide layer in the first opening; removing the dummy gates in the low voltage device region and the core device region to respectively form a second opening and a third opening; removing the dummy gate in the third opening an oxide layer, and form an interface layer in the third opening; form a high-K material layer and a metal gate in the first, second and third openings. The fabrication method can improve device performance. The semiconductor device and electronic device have high performance.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of semiconductor process technology, the critical dimensions of semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are continuously shrinking, and at the same time, the short channel effect (SCE) is becoming more and more serious. The FinFET (Fin Field Effect Transistor) device can shrink the device to a technology node of 20nm or below due to its good gate control ability on the channel charge. At the same time, in order to better overcome problems such as short channel effects, the post-high K / metal gate process and the replacement gate process are known as common processes for 14nm and below technology nodes. [0003] In practical applications, multi-IO devices (multi-IO devices) are require...

AI Technical Summary

Problems solved by technology

However, in the current multi-IO device (multi-IO device) manufacturing process, the gate oxide layer of low-voltage devices is mostly formed by ALD (atomic layer deposition), CVD (chemical vapor deposition) and other processes, and the interface quality is poor, resulting in poor device performance. decline

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