Surface treatment method for tellurium bismuth-based wafer
A surface treatment and base crystal technology, applied in the direction of circuits, semiconductor devices, etc., to achieve the effects of controllable thickness, uniform thickness distribution, and low production cost
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Embodiment 1
[0041] The 25 μm-diameter zone melting crystal rod was cut into 1.6 μm-thick bismuth tellurium-based wafers with a multi-wire cutting machine. Put the chemical degreasing liquid in an ultrasonic cleaning machine and heat it to 60°C. The chemical degreasing liquid is prepared according to the mass ratio of sodium phosphate: sodium carbonate: sodium hydroxide = 1:2:3, and the concentration of sodium carbonate: 20 g / L, and then placed the wafer in a chemical degreasing solution at 60°C for 2 min, and then cleaned it with running water. Soak the cleaned wafer in the etching solution for 5 s. The etching solution is prepared according to the mass ratio of ammonium fluoride: hydrogen peroxide: ammonium nitrate = 20:2:5. The concentration of ammonium fluoride in the etching solution is 5 mg / L, take out the wafer and wash it with flowing water. Then put the wafer into an acidic activation solution prepared with 37% hydrochloric acid for activation for 3 seconds, take it out and wash...
Embodiment 2
[0045] The 25 μm-diameter zone melting crystal rod was cut into tellurium-bismuth-based wafers with a thickness of 0.8 μm by a multi-wire cutting machine, and the chemical degreasing solution was placed in an ultrasonic cleaning machine and heated to 80 °C. The mass ratio of sodium phosphate: sodium carbonate: sodium hydroxide is 1:2:3, and the concentration of sodium carbonate is 50 g / L. Then, the wafer is ultrasonically cleaned in a chemical degreasing solution at 80°C for 2 minutes. Then wash with running water. Soak the cleaned wafer in the etching solution for 20 s. The etching solution is prepared according to the mass ratio of ammonium fluoride: hydrogen peroxide: ammonium nitrate = 20:2:5. The concentration of ammonium fluoride in the etching solution is 10 mg / L, take out the wafer and wash it with flowing water. Then put the wafer into an acidic activation solution prepared with 37% hydrochloric acid for activation for 10 seconds, take it out and wash it with runnin...
Embodiment 3
[0049] The 25 μm-diameter zone melting crystal rod was cut into tellurium-bismuth-based wafers with a thickness of 1.6 μm by a multi-wire cutting machine, and the chemical degreasing solution was placed in an ultrasonic cleaning machine and heated to 70 °C. The mass ratio of sodium phosphate: sodium carbonate: sodium hydroxide is 1:2:3, and the concentration of sodium carbonate is 30 g / L. Then, the wafer is ultrasonically cleaned in a chemical degreasing solution at 70°C for 3 minutes. Then wash with running water. Soak the cleaned wafer in the etching solution for 10 s. The etching solution is prepared according to the mass ratio of ammonium fluoride: hydrogen peroxide: ammonium nitrate = 20:2:5. The concentration of ammonium fluoride in the etching solution is 8 mg / L, take out the wafer and wash it with flowing water. Then put the wafer into an acidic activation solution prepared with 37% hydrochloric acid for activation for 5 seconds, take it out and wash it with running ...
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