Wafer bonding structure and preparation method thereof

Abstract

The invention discloses a wafer bonding structure and a preparation method thereof. The wafer bonding structure and the preparation method thereof mainly aim at solving the technical problems that inthe prior art, the bonding strength is low, and the voidage of bonding is high. According to the wafer bonding structure and the preparation method thereof, two wafers which need to be bonded are subjected to cleaning and metal Al evaporation deposition, the surface of an arbitrary wafer is subjected to photoresist spin-rotating, soft baking, UV exposure and photoresist development, equally-spacedchannels are formed through etching, and low-temperature bonding and low-temperature annealing bonding are conducted in the presence of oxygen to obtain the wafer bonding structure. According to thetechnical scheme, the wafer bonding structure comprises an upper wafer layer and a lower wafer layer, and oxidation and bonding are simultaneously conducted between the two wafer layers, so that the surface after bonding has the air channels of mixed aluminium oxide and air; by means of the wafer bonding structure and the preparation method thereof, it is achieved that the voids between the wafersare small, the bonding strength is high, and a device produced based on an SOI structure has high heat dissipating performance; the wafer bonding structure and the preparation method thereof can be used for low-temperature bonding of wafers.

Description

technical field

[0001] The invention relates to the technical field of wafer bonding, in particular to a bonded wafer structure and a preparation method thereof. Background technique

[0002] With the development of integrated circuits, wafer bonding has been proven to be a direct and effective method for assembling, processing, and manufacturing substrate materials, and has been widely used in the fields of semiconductors, microelectronics, MEMS, and optoelectronic devices. , especially low-temperature direct bonding has been more deeply reflected in the silicon-on-insulator (SOI) manufacturing process.

[0003] Wafer bonding means that two wafers with flat and clean surfaces can be connected to each other through chemical bonds on the surface under certain conditions. Wafer bonding has the compatibility and flexibility of the semiconductor process. In the bonding process, BCB (benzocyclobutene) is generally used as the bonding medium material. This bonding material has th...

Examples

Embodiment 1

[0049] Such as figure 1 As shown, this embodiment provides a structure of bonded wafers, including a first wafer 1 and a second wafer 2, the first wafer 1 is located at the bottom layer, the top of the first wafer 1 is an intermediate layer, and the intermediate layer It includes a gas channel 9 and an aluminum oxide layer 8, and the second wafer 2 is above the intermediate layer; the gas channel 9 is a groove-shaped gas channel with equal intervals formed by etching with a mixed gas.

[0050] The preparation method of the bonded wafer structure comprises the following steps:

[0051] A. Both the first wafer 1 and the second wafer 2 are cleaned and dried; RCA wet chemical cleaning method is used for cleaning, and the cleaning solution used in the RCA wet chemical cleaning method includes a mixed solution of organic solvent, sulfuric acid and hydrogen peroxide And a mixed solution of ammonia, hydrogen peroxide and deionized water; the organic solvent includes one or more of is...

Embodiment 2

[0059] Such as figure 1 As shown, this embodiment provides a structure of bonded wafers, including a first wafer 1 and a second wafer 2, the first wafer 1 is located at the bottom layer, the top of the first wafer 1 is an intermediate layer, and the intermediate layer It includes a gas channel 9 and an aluminum oxide layer 8, and the upper part of the intermediate layer is the second wafer 2; the gas channel 9 is a groove-shaped gas channel with equal intervals formed by etching with a mixed gas.

[0060] The preparation method of the bonded wafer structure comprises the following steps:

[0061] A. Both the first wafer 1 and the second wafer 2 are cleaned and dried; RCA wet chemical cleaning method is used for cleaning, and the cleaning solution used in the RCA wet chemical cleaning method includes a mixed solution of organic solvent, sulfuric acid and hydrogen peroxide And a mixed solution of ammonia, hydrogen peroxide and deionized water; the organic solvent includes one o...

Embodiment 3

[0070] Such as figure 1 As shown, this embodiment provides a structure of bonded wafers, including a first wafer 1 and a second wafer 2, the first wafer 1 is located at the bottom layer, the top of the first wafer 1 is an intermediate layer, and the intermediate layer It includes gas channels 9 and 8 layers of aluminum oxide, and the upper part of the middle layer is the second wafer 2; the gas channels 9 are groove-shaped gas channels with equal intervals formed by etching with mixed gas.

[0071] The preparation method of the bonded wafer structure comprises the following steps:

[0072] A. Both the first wafer 1 and the second wafer 2 are cleaned and dried; RCA wet chemical cleaning method is used for cleaning, and the cleaning solution used in the RCA wet chemical cleaning method includes a mixed solution of organic solvent, sulfuric acid and hydrogen peroxide And a mixed solution of ammonia, hydrogen peroxide and deionized water; the organic solvent includes one or more ...

technical field

[0001] The invention relates to the technical field of wafer bonding, in particular to a bonded wafer structure and a preparation method thereof. Background technique

[0002] With the development of integrated circuits, wafer bonding has been proven to be a direct and effective method for assembling, processing, and manufacturing substrate materials, and has been widely used in the fields of semiconductors, microelectronics, MEMS, and optoelectronic devices. , especially low-temperature direct bonding has been more deeply reflected in the silicon-on-insulator (SOI) manufacturing process.

[0003] Wafer bonding means that two wafers with flat and clean surfaces can be connected to each other through chemical bonds on the surface under certain conditions. Wafer bonding has the compatibility and flexibility of the semiconductor process. In the bonding process, BCB (benzocyclobutene) is generally used as the bonding medium material. This bonding material has th...

Examples

Embodiment 1

[0049] Such as figure 1 As shown, this embodiment provides a structure of bonded wafers, including a first wafer 1 and a second wafer 2, the first wafer 1 is located at the bottom layer, the top of the first wafer 1 is an intermediate layer, and the intermediate layer It includes a gas channel 9 and an aluminum oxide layer 8, and the second wafer 2 is above the intermediate layer; the gas channel 9 is a groove-shaped gas channel with equal intervals formed by etching with a mixed gas.

[0050] The preparation method of the bonded wafer structure comprises the following steps:

[0051] A. Both the first wafer 1 and the second wafer 2 are cleaned and dried; RCA wet chemical cleaning method is used for cleaning, and the cleaning solution used in the RCA wet chemical cleaning method includes a mixed solution of organic solvent, sulfuric acid and hydrogen peroxide And a mixed solution of ammonia, hydrogen peroxide and deionized water; the organic solvent includes one or more of is...

Embodiment 2

[0059] Such as figure 1 As shown, this embodiment provides a structure of bonded wafers, including a first wafer 1 and a second wafer 2, the first wafer 1 is located at the bottom layer, the top of the first wafer 1 is an intermediate layer, and the intermediate layer It includes a gas channel 9 and an aluminum oxide layer 8, and the upper part of the intermediate layer is the second wafer 2; the gas channel 9 is a groove-shaped gas channel with equal intervals formed by etching with a mixed gas.

[0060] The preparation method of the bonded wafer structure comprises the following steps:

[0061] A. Both the first wafer 1 and the second wafer 2 are cleaned and dried; RCA wet chemical cleaning method is used for cleaning, and the cleaning solution used in the RCA wet chemical cleaning method includes a mixed solution of organic solvent, sulfuric acid and hydrogen peroxide And a mixed solution of ammonia, hydrogen peroxide and deionized water; the organic solvent includes one o...

Embodiment 3

[0070] Such as figure 1 As shown, this embodiment provides a structure of bonded wafers, including a first wafer 1 and a second wafer 2, the first wafer 1 is located at the bottom layer, the top of the first wafer 1 is an intermediate layer, and the intermediate layer It includes gas channels 9 and 8 layers of aluminum oxide, and the upper part of the middle layer is the second wafer 2; the gas channels 9 are groove-shaped gas channels with equal intervals formed by etching with mixed gas.

[0071] The preparation method of the bonded wafer structure comprises the following steps:

[0072] A. Both the first wafer 1 and the second wafer 2 are cleaned and dried; RCA wet chemical cleaning method is used for cleaning, and the cleaning solution used in the RCA wet chemical cleaning method includes a mixed solution of organic solvent, sulfuric acid and hydrogen peroxide And a mixed solution of ammonia, hydrogen peroxide and deionized water; the organic solvent includes one or more ...

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