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Silicon nitride ceramic slurry, preparation method of silicon nitride ceramic slurry and application of silicon nitride ceramic slurry in preparing silicon nitride cast film

A technology of silicon nitride ceramics and silicon nitride, which is applied in the preparation of ceramic slurry and the field of preparation of silicon nitride ceramic slurry, can solve problems such as difficult preparation, achieve low sintering shrinkage, high density, and a wide range of applications Effect

Inactive Publication Date: 2018-03-30
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A stable high-solid content slurry is the prerequisite for casting a green body with high density, uniformity, and excellent structural properties. Therefore, the premise of obtaining a green body with excellent comprehensive properties is to find a suitable proportion of powder. , solvent, dispersant, plasticizer and binder slurry formula to solve the problem of difficult preparation of silicon nitride tape casting slurry

Method used

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  • Silicon nitride ceramic slurry, preparation method of silicon nitride ceramic slurry and application of silicon nitride ceramic slurry in preparing silicon nitride cast film

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Experimental program
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Effect test

Embodiment 1

[0028] In this embodiment, a method for preparing a silicon nitride cast film by non-water-based tape casting comprises the following steps:

[0029] (1) Weigh 27.2g of absolute ethanol and 52.8g of dibutyl ketone as the solvent respectively, and weigh 5.022g of pvp as the dispersant, add the dispersant and the solvent into the ball mill jar, and ball mill for 2h at a speed of 220r / min to make Dissolve the dispersant in the solvent to obtain a ball-milled dispersant solution. After the dispersant is dissolved, weigh 162g of silicon nitride powder, and weigh 8.1g of Y 2 o 3 and 8.1g of MgO powder as a sintering aid, open the ball milling tank, add silicon nitride powder and sintering aid to the dispersion in the ball milling tank, then seal the ball milling tank, continue ball milling for 24 hours, and control the speed at 220r / min, to obtain a stable suspension;

[0030] (2) take by weighing the BBP of 8.1g and the PEG of 8.1g as plasticizer respectively, and take by weighi...

Embodiment 2

[0034] This embodiment is basically the same as Embodiment 1, especially in that:

[0035] In this embodiment, a method for preparing a silicon nitride cast film by non-water-based tape casting comprises the following steps:

[0036] (1) Weigh 34.0g of absolute ethanol and 66.0g of dibutyl ketone as solvent, weigh 5.184g of pvp as dispersant, add the dispersant and solvent into the ball mill tank, and ball mill for 2h at a speed of 250r / min, Dissolve the dispersant in the solvent to obtain a ball-milled dispersant solution. After the dispersant is dissolved, weigh 162g of silicon nitride powder, and weigh 8.1g of Y 2 o 3 and 8.1g of MgO powder as a sintering aid, open the ball milling tank, add silicon nitride powder and sintering aid to the dispersion in the ball milling tank, then seal the ball milling tank, continue ball milling for 24 hours, and control the speed at 250r / min, to obtain a stable suspension;

[0037] (2) take by weighing the BBP of 13.6g and the PEG of 1...

Embodiment 3

[0041] This embodiment is basically the same as the previous embodiment, and the special features are:

[0042] In this embodiment, a method for preparing a silicon nitride cast film by non-water-based tape casting comprises the following steps:

[0043] (1) Weigh 51.0 g of absolute ethanol and 99.0 g of dibutyl ketone as solvent, weigh 7.168 g of pvp as dispersant, add dispersant and solvent into the ball mill tank, and ball mill for 2 hours at a speed of 200 r / min, Dissolve the dispersant in the solvent to obtain a ball-milled dispersant solution. After the dispersant is dissolved, weigh 224g of silicon nitride powder, and weigh 10.08g of Y 2 o 3 and 10.08g of MgO powder as a sintering aid, open the ball milling jar, add silicon nitride powder and sintering aid to the dispersion in the ball milling jar, then seal the ball milling jar, continue ball milling for 24 hours, and control the speed of 250r / min, get a stable suspension;

[0044] (2) take by weighing the BBP of 20...

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Abstract

The invention provides silicon nitride ceramic slurry, a preparation method of the silicon nitride ceramic slurry and application of the silicon nitride ceramic slurry to preparation of a silicon nitride cast film. The preparation method comprises the following steps of mixing silicon nitride powder, a sintering aid, a dispersant and a solvent, performing first ball milling, then adding an adhesive and a plasticizer for secondary ball milling, and performing vacuum defoaming to obtain slurry, wherein the mass ratio of the silicon nitride powder, the sintering aid, the dispersant and the solvent is 100 to (5-15) to (49-67) to (2-3.5) to (10-20) to (10-40); and performing tape casting and drying on the slurry to obtain a smooth, uniform, dense, gentle and agreeable Si3N4 biscuit which is benefical to forming processing and sintering in a later period. The silicon nitride ceramic slurry obtained by the method is uniform, is low in viscosity, high in solid content, simple in preparation technology and liable to realize industrialization and is suitable for tape casting.

Description

technical field [0001] The invention relates to a preparation method and application of a ceramic slurry, in particular to a preparation method and application of a silicon nitride ceramic slurry, which is applied in the technical field of silicon nitride ceramic preparation technology. Background technique [0002] With the miniaturization of electronic components and the rapid development of large-scale integrated circuits, higher requirements are put forward for ceramic substrates, which are important pillars of integrated circuits. In some special fields, the ceramic substrate is required not only to have good thermal conductivity, but also to have higher strength. The widely used ceramic substrate material is mainly A1 2 o 3 , but Al 2 o 3 The substrate has the disadvantages of low thermal conductivity, large dielectric constant, and large difference between the coefficient of linear expansion and that of silicon components. In recent years, other materials that rep...

Claims

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Application Information

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IPC IPC(8): C04B35/584C04B35/626C04B35/632C04B35/634C04B35/64
CPCC04B35/584C04B35/6261C04B35/632C04B35/6342C04B35/63488C04B35/64C04B2235/6025
Inventor 施鹰贾颍飞谢建军雷芳章蕾丁毛毛
Owner SHANGHAI UNIV
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