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A-direction sapphire polishing agent and preparing method thereof

A polishing agent and sapphire technology, which is applied in the field of technical sapphire polishing, can solve the problems of high surface roughness, difficult machining, and excessive loss of auxiliary materials, etc., and achieve excellent lubricating effect, fast removal rate, and low cost.

Inactive Publication Date: 2018-04-24
SHANDONG YINFENG NANOMETER NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high hardness and high brittleness of A-direction sapphire, it is difficult to machine, and there are generally problems in the process of processing A-direction sapphire workpieces, such as low polishing efficiency, high wafer surface roughness, and excessive loss of auxiliary materials, which limit the A-direction sapphire industry. development of
However, in the prior art, there are few polishing fluids for A-oriented sapphire, and there are still problems of low removal rate and insufficient lubrication effect. It can be seen from this that it is possible to provide an improved raw material formula based on the deficiencies in the prior art. A to sapphire polishing fluid, to solve the above technical problems, become a technical problem to be solved urgently by those skilled in the art

Method used

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preparation example Construction

[0038] The present application also provides a method for preparing an A-direction sapphire polishing agent, which includes the following steps: take silicon dioxide and prepare a silicon dioxide solution with a content of 40%, add it to a high-speed mixer after filtering, and add dispersing Agent, nano-alumina micropowder, diamond micropowder, surfactant, complexing agent and pH value buffering agent, adjust the pH value to 9~12, use ultrasonic dispersion, and filter to obtain uniformly dispersed A-direction sapphire polishing liquid.

[0039] As an optional embodiment, the silica solution is filtered with a 500-mesh filter cloth; the pH buffer is potassium hydroxide and tetramethylammonium hydroxide in a mass ratio of 1:1.

Embodiment 1

[0041] A kind of A to sapphire polishing agent, comprises following raw material component: 5kg silicon dioxide solution, 50g nano-alumina micropowder, 6g diamond micropowder, 5g organophosphonic acid, 5g betaine surfactant, 5g ammonium fluoride and mass ratio are 1:1 Potassium Hydroxide and Tetramethylammonium Hydroxide.

[0042]A preparation method of A-direction sapphire polishing agent, comprising the following steps: 5 kg of silicon dioxide solution is obtained by filtering with a 500-mesh filter cloth, stirring the above-mentioned silicon dioxide solution at a high speed at a speed of 300-1000 r / min, slowly adding 5 g of organic Small molecules of phosphonic acid, then add 50g of nano-alumina micropowder; continue to slowly add 5g of betaine surfactant, 5g of ammonium fluoride, and 6g of diamond micropowder; pH value to 10; finally ultrasonically dispersed, filtered to obtain a uniformly dispersed A-direction sapphire polishing solution.

Embodiment 2

[0044] A sapphire polishing agent for A, comprising the following raw material components: 5kg silicon dioxide solution, 50g nano-alumina micropowder, 6g diamond micropowder, 6g organic phosphonic acid, 6g triazine ring anionic surfactant, 6g ammonium fluoride and Potassium hydroxide and tetramethylammonium hydroxide in a mass ratio of 1:1.

[0045] A preparation method of A-direction sapphire polishing agent, comprising the following steps: 5 kg of silicon dioxide solution is obtained by filtering with a 500-mesh filter cloth, stirring the above-mentioned silicon dioxide solution at a high speed at a speed of 300-1000 r / min, slowly adding 5 g of organic Phosphonic acid, then add 50g nano-alumina micropowder; continue to slowly add 6g triazine ring anionic surfactant, 6g ammonium fluoride, 6g diamond micropowder; then use KOH and tetramethyl hydroxide with a mass ratio of 1:1 Adjust the pH value to 11.5 with ammonium; finally ultrasonically disperse and filter to obtain a unif...

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Abstract

The invention provides an A-direction sapphire polishing agent and a preparing method thereof. The A-direction sapphire polishing agent is prepared from, by mass, 20-25 parts of silicon dioxide solution, 0.5-5 parts of nanometer aluminium oxide micro-powder, 0.02-2 parts of dispersing agent, 0.06-0.08 part of diamond micro-powder, 0.02-2 parts of surfactant, 0.02-2 parts of complexing agent and 0.01-2 parts of pH value buffering agent. By reasonably arranging the content values of all raw material component agents, the finally-obtained A-direction sapphire polishing agent has the advantages ofbeing rapid in removal speed in the processing process, excellent in lubricating effect and good in processed product surface quality; the provided A-direction sapphire polishing agent is simple in preparing method and low in cost and is A-direction sapphire polishing liquid which is high in polishing efficiency and low in roughness.

Description

technical field [0001] The application relates to the field of technical sapphire polishing, in particular to an A-direction sapphire polishing agent and a preparation method thereof. Background technique [0002] Sapphire has stable chemical properties, high temperature resistance, good wear resistance, hardness second only to diamond, excellent dielectric and thermal properties, and is widely used in semiconductor chip substrates, infrared windows, mobile phone panels and other fields. Sapphire has high hardness. If only mechanical polishing is used, diamond powder can only be used to polish sapphire, but the polishing efficiency is low, and scratches are easy to be left on the surface of sapphire. Chemical polishing mainly uses chemical reagents to corrode the surface of the material, remove the protrusions on the surface of the material, and make the surface of the material smooth and flat. However, high temperature is required to provide the energy required for chemical...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 谢可彬胡元营曲玲玲牛怀成
Owner SHANDONG YINFENG NANOMETER NEW MATERIAL CO LTD
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