Oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst and preparation method and application thereof

A carbon nitride and catalyst technology, applied in the field of photocatalysis, can solve the problems of high recombination rate of photogenerated electron-hole pairs, small specific surface area of ​​simple carbon nitride, and limitation of photocatalytic efficiency development, etc., and achieve large band gap, Excellent photocatalytic activity, high repeatability effect

Inactive Publication Date: 2018-05-08
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the specific surface area of ​​pure carbon nitride is small, the band gap is large, and the recombination rate of photogenerated electron-hole pairs is high, which cannot effectively use sunlight, which greatly limits the improvement of its photocatalytic efficiency and its application in the field of photocatalysis. develop

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  • Oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst and preparation method and application thereof
  • Oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst and preparation method and application thereof
  • Oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst and preparation method and application thereof

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Effect test

Embodiment 1

[0031] A kind of oxygen vacancy tungsten oxide / carbon nitride composite photocatalyst, described (WO 2.72 / C 3 N 4 ) The preparation method of the composite photocatalyst is as follows:

[0032] (1) Weigh 20g of urea and place it in a ceramic crucible with a lid, raise the temperature to 550°C in a muffle furnace at a rate of 2°C / min, keep it for 4 hours, and cool naturally to room temperature to obtain carbon nitride powder; take and prepare 0.5 g of the carbon nitride powder was dispersed in 500 ml of hydrochloric acid with a concentration of 6 M, and after continuous stirring for 24 hours, the carbon nitride powder was collected by centrifugation, washed three times with deionized water and dried;

[0033] (2) Weigh 0.1g of protonated carbon nitride and disperse it in 75ml of absolute ethanol and sonicate for 10min, add 0.0398g of WCl 6 (The mass ratio of carbon nitride and WCl6 is 1:0.398); placed in a high-pressure reactor, 200 ° C hydrothermal treatment for 12 hours; ...

Embodiment 2

[0036] A kind of oxygen vacancy tungsten oxide / carbon nitride composite photocatalyst, described (WO 2.72 / C 3 N 4 ) The preparation method of the composite photocatalyst is as follows:

[0037] (1) Weigh 20g of urea and place it in a ceramic crucible with a lid, raise the temperature to 550°C in a muffle furnace at a rate of 2°C / min, keep it for 3 hours, and cool naturally to room temperature to obtain carbon nitride powder; take and prepare 0.5 g of the carbon nitride powder was dispersed in 500 ml of hydrochloric acid with a concentration of 5 M, and after continuous stirring for 24 hours, the carbon nitride powder was collected by centrifugation, washed three times with deionized water and dried;

[0038] (2) Weigh 0.1g of protonated carbon nitride and disperse it in 75ml of absolute ethanol and sonicate for 10min, add 0.099g of WCl 6 (The mass ratio of carbon nitride and WCl6 is 1:0.99); placed in a high-pressure reactor, 180 ° C hydrothermal treatment for 15 hours;

...

Embodiment 3

[0041] A kind of oxygen vacancy tungsten oxide / carbon nitride composite photocatalyst, described (WO 2.72 / C 3 N 4 ) The preparation method of the composite photocatalyst is as follows:

[0042](1) Weigh 20g of urea and place it in a ceramic crucible with a lid, raise the temperature to 550°C in a muffle furnace at a rate of 2°C / min, keep it for 3 hours, and cool naturally to room temperature to obtain carbon nitride powder; take and prepare 0.5 g of the carbon nitride powder was dispersed in 500 ml of hydrochloric acid with a concentration of 7 M, and after continuous stirring for 24 hours, the carbon nitride powder was collected by centrifugation, washed three times with deionized water and dried;

[0043] (2) Weigh 0.1g of protonated carbon nitride and disperse it in 75ml of absolute ethanol and sonicate for 10min, add 0.1985g of WCl 6 (Carbon Nitride and WCl 6 The mass ratio is 1:1.985); placed in a high-pressure reactor, 220 ° C hydrothermal treatment for 10 hours;

...

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Abstract

The invention relates to an oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst and a preparation method and application thereof. The preparation method of the composite photocatalystcomprises the following steps of: S1, adding carbon nitride powder in a hydrochloric acid solution for protonation treatment, performing continuous stirring, and then conducting filtration, washing and drying; S2, dispersing the protonated carbon nitride powder in anhydrous ethanol or water for ultrasonic treatment, and then adding tungsten hexachloride for a hydrothermal reaction; and S3, collecting the product of the hydrothermal reaction, and performing washing, drying and grinding to obtain the oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst. According to the oxygen-vacancy tungsten oxide/carbon nitride composite photocatalyst and the preparation method and application thereof, doping treatment is performed on carbon dioxide by adopting oxygen-vacancy WO2.72 as adoping semiconductor, more active sites can be provided by the oxygen-vacancy structure of the tungsten oxide in a photocatalytic reaction, and meanwhile the oxygen-vacancy tungsten oxide/carbon nitride (WO2.72/C3N4) composite material has a larger energy gap and a wider range of response to sunlight.

Description

technical field [0001] The invention relates to the technical field of photocatalysis, in particular to an oxygen vacancy tungsten oxide / carbon nitride composite photocatalyst and its preparation method and application. Background technique [0002] Tungsten oxide is a new type of semiconductor material with good photocatalytic activity, among which WO 2.72 (i.e. W 18 o 49 ) is the only non-stoichiometric tungsten oxide known to exist in a pure state. Because of the oxygen vacancy defects in the crystal structure, it has unique photochromic, near-infrared absorption, photocatalytic and other properties. But WO 2.72 At present, it is still in the laboratory stage, the synthesis cost is high, and the controllability of the product is poor. In order to promote the use better, it is necessary to find a preparation method with low cost and simple operation. Hongye Zhang et al. successfully prepared WO with oxygen vacancies using a hydrothermal method. 2.72 , the operation i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24C02F1/30
CPCB01J27/24B01J35/004C02F1/30C02F2101/308C02F2305/10
Inventor 陈志鸿王新马歌吕海钦
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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