A kind of silicon rod cutting method

Abstract

The invention discloses a silicon rod cutting method. A silicon rod is sliced after being subjected to surface oxidization treatment. In the silicon rod cutting method, the silicon rod is subjected tosurface oxidization treatment before being sliced, a layer of compact oxidation film is formed on the surface of the silicon rod, and the oxidation film can repair the defects on the surface of the silicon rod. The hardness of the oxidation film is low, the functions of protection and buffer can be achieved on the silicon rod, a passivation effect can be achieved, and therefore generation and expansion of surface cracks are reduced, and the breaking resisting strength of the silicon rod is improved. In the slicing process, the acting force of diamond wire cutting is not enough for generatingthe defects such as collapsing and silicon falling to the edges of silicon slices, the manufacturing loss is reduced, the proportion of silicon slice collapsing is reduced, and the yield of the processed silicon slices is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon rod cutting method. Background technique [0002] As the energy crisis and environmental problems such as smog and greenhouse effect become more and more serious, energy transformation is imminent. Due to the advantages of clean, pollution-free and large reserves of photovoltaic energy, the photovoltaic industry has received strong support from governments of various countries, has made great progress in technology, and has been more and more widely used. Solar energy has become one of the most promising new energy sources today. . [0003] In the past ten years, with the escalation of photovoltaic trade disputes and market fluctuations, the photovoltaic industry has experienced overcapacity, but the market demand for photovoltaic clean energy will continue to increase steadily, and photovoltaic power generation has entered the era of large-scale promotion and appl...

AI Technical Summary

Problems solved by technology

However, silicon crystal is a material with high hardness and high brittleness. During the diamond wire cutting process, defects such as edge chipping, silicon falling and process loss are prone to occur, accounting for 3%-4% of the total loss of silicon wafers, seriously affecting silicon wafers. The yield rate and the production cost of the cell

The main reason for the above-mentioned defects in silicon wafers is that the surface of silicon rods is prone to micro cracks or stress concentration to cause silicon wafer gaps, which induce edge chipping, silicon falling and debris.

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