Tungsten disulfide nanotube preparation method

A technology of tungsten disulfide and nanotubes, which is applied in chemical instruments and methods, nanotechnology, tungsten compounds, etc., can solve problems such as complex chemical reactions, achieve strong size controllability, and facilitate large-scale industrial production. uniform effect

Active Publication Date: 2018-05-18
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above reported structure, the prepared WS 2 Nanotubes involve complex chemical reactions, which have a great impact on their applications such as transistors, lithium batteries, and hydrogen production catalysts

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A preparation method for tungsten disulfide nanotubes, comprising the following process steps:

[0019] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore diameter of 40nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and pass it into 100SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 100SCCM argon gas, raise the temperature to 100°C and keep it for 60 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to get metal tungsten deposition, stop heating;

[0020] 2) After the vacuum tube furnace in step 1) is lowered to room temperature, take out the porous anodized aluminum template, place its opening downwards in a ceramic crucible filled with sulfur powder, seal the crucible and place it in a vacuum tube furnace. Under the protection of 100SCCM argon gas, the temperature wa...

Embodiment 2

[0023] A preparation method for tungsten disulfide nanotubes, comprising the following process steps:

[0024] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 10nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and pass in 100SCCM of nitrogen Purge air from furnace tubes. Under the protection of nitrogen at 100SCCM, raise the temperature to 50°C and keep it for 200 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to get metal tungsten deposition, stop heating;

[0025] 2) After the vacuum tube furnace in step 1) is lowered to room temperature, take out the porous anodized aluminum template, place its opening downwards in a ceramic crucible filled with sulfur powder, seal the crucible and place it in a vacuum tube furnace. Under the protection of 100SCCM nitrogen, the temperature was raised to 120°C and...

Embodiment 3

[0028] A preparation method for tungsten disulfide nanotubes, comprising the following process steps:

[0029] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 200nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and feed it with 100 SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 100SCCM argon gas, raise the temperature to 150°C and keep it for 30 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to get metal tungsten deposition, stop heating;

[0030] 2) After the vacuum tube furnace in step 1) is lowered to room temperature, take out the porous anodized aluminum template, place its opening downwards in a ceramic crucible filled with sulfur powder, seal the crucible and place it in a vacuum tube furnace. Under the protection of 100SCCM argon gas, the temperature was ...

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Abstract

The invention discloses a tungsten disulfide nanotube preparation method. The method includes process steps: 1) laying hexacarbonyl tungsten at the bottom of a ceramic crucible, positioning a porous anodic aluminum oxide template with an opening downward above hexacarbonyl tungsten, sealing the crucible, putting into a tubular furnace, performing low-temperature sublimation deposition and high-temperature pyrolysis under gas shielding, and cooling; 2) after the vacuum tubular furnace is cooled to the room temperature, positioning the template with the opening downward into the ceramic cruciblefilled with sulfur powder, sealing the crucible, and heating to enable direction reaction of elemental sulfur with metal tungsten; 3) using dilute acid solution to remove the porous anodic aluminum oxide template, using carbon disulfide to remove excessive sulfur, performing suction filtration and drying to obtain a finished product. The tungsten disulfide nanotube preparation method is simple instep and free of environmental pollution and complicated equipment, a prepared tungsten disulfide nanotube powder material is high in size controllability and crystallinity, morphological uniformityof nanotube walls is realized, and accordingly comprehensive performances of tungsten disulfide nanotube powder material products are remarkably improved. In addition, the tungsten disulfide nanotubepreparation method is extensive in applicability and beneficial to large-scale industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor nanomaterials, in particular to a method for preparing semiconductor nanotubes. Background technique [0002] Tungsten disulfide (WS 2 ) crystal structure is a hexagonal close-packed layered structure. There are strong chemical bonds between tungsten atoms and sulfur atoms, while interlayer sulfur atoms are connected by weak molecular bonds. The bonding force between layers is van der Waals force, the interlayer distance of tungsten disulfide is relatively large, and the friction coefficient is lower, between 0.03 and 0.05. Tungsten disulfide has good lubrication performance, not only suitable for normal lubrication conditions, but also can be used in harsh working environments such as high temperature, high pressure, high vacuum, high load, radiation and corrosive media. In addition, the application fields of such layered compounds also involve photodetectors, transistors, lithium batteries, hydro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/00B82Y40/00
CPCB82Y40/00C01G41/00C01P2004/13
Inventor 胡柱东林海敏
Owner FOSHAN UNIVERSITY
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