Method for increasing storage density of aerospace anti-radiation memory and memory

Abstract

The invention discloses a method for increasing the storage density of an aerospace anti-radiation memory and the memory. A storage unit is connected with the drain electrode of a memory CMOS (Complementary Metal-Oxide-Semiconductor Transistor), the storage unit is of a three-layer structure, namely a platinum electrode layer, a nickel oxide storage layer and a platinum electrode layer respectively; nickel oxide in the nickel oxide storage layer is at a polycrystal state, multi-state stable storage of the memory is achieved by loading an electric field and / or magnetic field, expansion of a storage state is achieved, and the storage density of the aerospace anti-radiation memory is remarkably increased.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a method for increasing the storage density of an aerospace anti-radiation memory and the memory. Background technique [0002] As one of the core devices in aerospace electronic products, memory mainly completes functions such as program storage and data cache. In aircraft such as satellites, space shuttles, and space stations, electronic systems such as memories need to work for a long time in a complex space radiation environment. Different particles in the radiation environment have two types of effects on memories, one is the total dose radiation effect, and the other is the single dose radiation effect. Particle radiation effect. Both effects will generate defects inside the memory, slowly degrade the performance of the device, and eventually lead to errors in the logic functions of the circuit and system, and may cause permanent damage to the system in severe ...

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Problems solved by technology

[0008] (1) For the method of reducing the size of the memory cell, the main method is to continuously reduce the volume of each local structure by improving the processing level. From the perspective of practical application, if the device size is reduced blindly to achieve miniaturization, the cost of the manufacturing process will be very high. At the same time, too small volume will produce microscopic effects, which is not conducive to the stable storage of memory

[0009] (2) For the method of 3D stacking integration, although the relevant research work has achieved some results, due to the immature preparation process and relatively high input costs, the prospect of commercial promotion is not optimistic

There is no disclosed method for realizing high-density storage of memory by means of electromagnetic control

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