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Quantum well coupling-enhancement ZnO-based light-emitting diode and preparation method thereof

A light-emitting diode, enhanced technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of not further improving luminous efficiency, unfavorable carrier cascade oscillation coupling, reducing luminous efficiency, etc. The effect of adjustable wavelength, high average luminous power and good application prospect

Inactive Publication Date: 2018-05-25
中国人民解放军63791部队
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, because the physical properties of CdO and ZnO (lattice constant, thermal conductivity coefficient, polarization strength, chemical bond energy, etc.) In addition, the recombination of holes and electrons in each well layer in multiple quantum wells is not related, which is not conducive to the realization of carrier cascade oscillation coupling, so that the luminous efficiency cannot be further improved

Method used

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  • Quantum well coupling-enhancement ZnO-based light-emitting diode and preparation method thereof
  • Quantum well coupling-enhancement ZnO-based light-emitting diode and preparation method thereof
  • Quantum well coupling-enhancement ZnO-based light-emitting diode and preparation method thereof

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Embodiment 1

[0044] 1. A quantum well coupling enhanced ZnO-based light-emitting diode, such as figure 1 As shown, including Si substrate 1, buffer layer 2 on the substrate, n-type ZnO layer 3; Cd on the n-type ZnO layer x Zn 1-x O / ZnO multi-quantum well layer 4, p-type ZnO layer 5 on the multi-quantum well layer, metal contact electrode 6 on the p-type ZnO layer and n-type ZnO layer.

[0045] 2. The preparation method of the above-mentioned quantum well coupling enhanced ZnO-based light-emitting diode, the steps are as follows:

[0046] (1) Clean the Si substrate before growth

[0047] The cleaning steps are: first in sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) for 1 min to 5 min, and then in hydrofluoric acid (HF) for 1 min to 3 min to remove the SiO on the Si surface 2 The oxide layer is corroded away, followed by further ammonia (NH 3 .H 2 O) and hydrogen peroxide (H 2 o 2 ) for 3 min to 15 min, then continue to wash in hydrofluoric acid (HF) for 1 min to 3 mi...

Embodiment 2

[0056] A quantum well coupling enhanced ZnO-based light-emitting diode, its structure and preparation process are the same as in Example 1, the difference is that in the preparation method, buffer layer 2, n-type ZnO layer 3, Cd x Zn 1-x The O / ZnO multiple quantum well layer 4 and the p-type ZnO layer 5 are realized by metal organic vapor deposition (MOCVD).

Embodiment 3

[0058] A quantum well coupling enhanced ZnO-based light-emitting diode, its structure and preparation process are the same as in Example 1, the difference is that in the preparation method, buffer layer 2, n-type ZnO layer 3, Cd x Zn 1-x The O / ZnO multi-quantum well layer 4 and the p-type ZnO layer 5 are realized by means of pulsed laser deposition (PLD).

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Abstract

The invention discloses a quantum well coupling-enhancement ZnO-based light-emitting diode and a preparation method thereof. The quantum well coupling-enhancement ZnO-based light-emitting diode comprises a substrate layer, a buffer layer, an n-type ZnO layer, a CdxZn1-xO / ZnO multi-quantum-well layer and a p-type ZnO layer in sequence from the bottom up. The quantum well coupling-enhancement ZnO-based light-emitting diode also comprises metal contact electrodes on the p-type ZnO layer and the n-type ZnO layer respectively. Wells in the multi-quantum-well layer are formed by CdxZn1-xO with periodic serrated change in Cd component; and a barrier layer is formed by ZnO. The quantum well coupling-enhancement ZnO-based light-emitting diode has the advantages of low turn-on voltage, adjustable luminous main wavelength, high internal quantum efficiency, and higher average luminous power of same-size devices than that of non-coupling-enhancement devices; and the light-emitting diode has a goodapplication prospect in aspects of lighting, mobile phone backlight source, headlight and plant cultivation and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices. More specifically, it relates to a quantum well coupling enhanced ZnO-based light-emitting diode and a preparation method thereof. Background technique [0002] In recent years, light-emitting diodes (LEDs) have been proven by the market as a light-emitting device with great potential, widely used in display screens, backlights, lighting and other technologies, and have also been positioned by the country as the future development of new energy and new materials. a direction of development. [0003] For LEDs, the growth of the multi-quantum well layer is very important, which improves the luminous efficiency of the device through the quantum confinement effect of carriers in the quantum wells. At present, in the multiple quantum wells of ZnO-based light-emitting diodes, the material of the well layer is Cd x Zn 1-x O. [0004] However, because the physical proper...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/06H01L33/005
Inventor 苏龙兴王玉超刘剑锋赵宇何孝港马忠权刘伟杨勇赵亿军
Owner 中国人民解放军63791部队
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