Method for preparing graphene through electrochemical cathodic disbonding graphene sheets by taking DTAB as electrolyte

Abstract

The invention discloses a method for preparing graphene through electrochemical cathodic disbonding graphene sheets by taking DTAB as electrolyte. The method is characterized by comprising the following steps: firstly, preparing materials; secondly, preparing electrical disbonding liquor; thirdly, assembling an electrical disbonding device; fourthly, performing electrical disbonding; fifthly, filtering and washing; sixthly, performing ultrasonic dispersion; seventhly, performing freeze drying, so as to obtain an aqueous solution of graphene, and performing freeze drying, so as to obtain graphene powder. The method has the advantages that raw materials for preparation are simple and easy to obtain, the method is easy to operation, the cost is low, the technical process is simple, steps areless, the production cycle is short, the defect level of the formed graphene is low, the number of layers is small, and the graphene is very suitable for industrial production.

Description

technical field [0001] The invention relates to graphene technology, in particular to a method for preparing graphene by electrochemical cathode stripping graphite foil with DTAB as an electrolyte. Background technique [0002] Graphene is a two-dimensional material with a thickness of only one carbon atom. 2 The hybridized orbitals form a hexagonal planar film with a honeycomb lattice, which is a new single-layer sheet-like material composed of carbon atoms. Graphene is not only the thinnest material, but also the strongest material. Its fracture strength is 200 times higher than that of the best steel. At the same time, it has good elasticity, and its stretching range can reach 20% of its own size. It is Currently the thinnest and strongest material in nature. With unique carrier characteristics, its electron mobility is 2×10 5 cm 2 / V.S, about 140 times that of electron mobility in silicon, 20 times that of gallium arsenide, high temperature stability, and conductivit...

AI Technical Summary

Problems solved by technology

Although utilizing the Hummers method to prepare graphene is widely used, in actual operation, this method has more steps and has more influence factors on the synthesis process, resulting in a lower yield of graphene, and the synthesized graphene The degree of defect is large and the quality is not high;

[0006] (2) Chemical vapor deposition (CVD) method: This method uses carbon-containing compounds such as methane as a carbon source, and cracks the carbon source at high temperature to generate carbon atoms and penetrates into the metal matrix. After lowering the temperature, the carbon atoms will be released from the metal matrix However, the chemical vapor deposition (CVD) method is expensive and complicated, which limits the further development of three-dimensional graphene to a certain extent, and the chemical vapor deposition (CVD) method requires specific porous metal materials As a base, this increases its cost considerably;

[0007] (3) Template method: This method uses graphene oxide as a raw material to form graphene oxide covering the template through electrostatic interaction or intermolecular force, and graphene can be prepared by reducing graphene oxide to graphene and removing the template. The biggest advantage of this method is that the pore size can be adjusted, that is, graphene with different pore sizes can be prepared by changing the template, but this method has many preparation procedures, the process is complicated, and it takes a long time;

[0008] The above-mentioned methods have a series of disadvantages, such as: the prepared graphene has a high degree of defect, the preparation process is complicated, the cost is high, it takes a long time, and it is not easy to operate, etc.

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