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Cmp slurry composition for polishing organic film and polishing method using same

A technology of grinding slurry and chemical machinery, which is applied to polishing compositions containing abrasives, chemical instruments and methods, and other chemical processes. It can solve problems such as difficulty in ensuring the stability of oxidants and corrosion of diamond discs, and achieve excellent grinding effects. Effect

Pending Publication Date: 2018-06-08
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in shallow trench isolation (STI) process or gate (gate) buried process, Fe, Mn and Cr may cause leakage current (leakage current)
In addition, cerium (Ce) has the following problems even though it does not cause leakage current: Tetravalent cerium ion (Ce 4+ ) becomes trivalent cerium ion (Ce 3+ ), resulting in difficulty in ensuring the stability of the oxidizing agent, and grinding characteristics such as grinding rate are variable due to changes in the concentration of tetravalent cerium oxide ions
Although the pH value of the slurry solution decreased to prevent tetravalent cerium ions (Ce 4+ ) into trivalent cerium ions (Ce 3+ ), but this can lead to corrosion of the diamond discs used to condition the pads or CMP equipment
In addition, there is the following problem: once tetravalent cerium ions (Ce 4+ ) into trivalent cerium ions (Ce 3+ ), this trivalent cerium ion cannot return to tetravalent cerium ion (Ce 4+ )

Method used

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  • Cmp slurry composition for polishing organic film and polishing method using same
  • Cmp slurry composition for polishing organic film and polishing method using same

Examples

Experimental program
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Effect test

example 1

[0055] Formation of an organic film: a 5000 angstrom thick silicon oxide film was deposited on a patterned wafer having an engraved pattern on its surface as a grinding stop film, and then a 2650 angstrom thick SOH film (Samsung (Samsung) was formed on the surface of the silicon oxide )SDI) to fill the engraving pattern. Here, the SOH film is formed by baking at 400°C.

[0056] CMP slurry composition: A CMP slurry composition was prepared by mixing the following components with ultrapure water in the amounts listed in Table 1 (weight % based on the total weight of the CMP slurry composition).

[0057] The SOH film was polished using the prepared CMP slurry composition under the following polishing conditions.

[0058] Polishing conditions: An H800 CMP pad (FUJIBO Co., Ltd.) was used as a polishing pad. Under the conditions of 1.0 pounds per square inch (psi) compression pressure, 200 ml / min slurry flow rate, 90 rpm table speed and 90 rpm spindle speed Grinding was performed...

example 2 to example 5 and comparative example 1 to comparative example 6

[0060] An organic film was formed under the same conditions as in Example 1, and a CMP slurry composition was prepared using the components listed in Table 1, and then the organic film was ground in the same manner as in Example 1. Next, the grinding rate was measured. The results are shown in Table 1.

[0061] Details of the components of the CMP slurry composition

[0062] (A) Abrasive: Colloidal silica (EVONIC Co., Ltd.) with an average particle diameter of 35 nm was used.

[0063] (B) Contains Ce 4+ Ionic cerium salt: Ammonium cerium nitrate (Samchun Chemical Co., Ltd.) was used.

[0064] (C) Oxidizing agent

[0065] (c1) Hydrogen peroxide: Hydrogen peroxide (Dongwoo Fine-Chem Co., Ltd., oxidation potential: 1.77 eV) was used.

[0066] (c2) Nitric acid: Nitric acid (Samchun Chemical Co., Ltd., oxidation potential: 0.80 eV) was used.

[0067] (c3) Perchlorate: Perchlorate (Samchun Chemical Co., Ltd., oxidation potential: 0.17 eV) was used.

[0068] (c4) Hydrochlori...

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Abstract

The present invention relates to a CMP slurry composition, for polishing an organic film, comprising: cerium salts comprising ultrapure water, abrasives and cerium (IV) ions; and an oxidizing agent, wherein the oxidizing agent has an oxidation potential of 1.72eV or higher in an acidic region and has a pH value of from 1 to 7. The CMP slurry composition enables stabilization of cerium (IV) ions (Ce4+) even at a pH of 1 or higher. Therefore, the present invention shows enhanced polishing effects on an organic film and enables easily organic film polishing, and particularly self-aligned double patterning, by means of an organic film polishing method using the CMP slurry composition.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing (CMP) slurry composition for an organic film and a polishing method using the same. Background technique [0002] Recently, as the degree of integration and performance of semiconductor devices increase, the line width of interconnection patterns becomes narrower and the interconnection patterns become multi-layered. In order to improve the accuracy of photolithography used to fabricate semiconductor devices, the flatness between layers in each process is critical. Currently, a chemical mechanical polishing (CMP) process is a planarization technology that attracts attention. The CMP process can be classified into oxide film CMP, metal CMP, polysilicon (poly-Si) CMP, organic film CMP, etc. according to the material to be polished. [0003] In CMP, it is known that the polishing rate and flatness are greatly influenced by the surface modification reaction of the film to be polished. To e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02H01L21/306
CPCC09G1/02C09K3/14H01L21/306
Inventor 崔正敏能条治辉金高恩金容国朴容淳
Owner SAMSUNG SDI CO LTD
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