Method and device for preparing nitrogen-doped carbon nanotubes by using microwave vapor deposition
A technology for preparing a device and carbon nanotubes, applied in the field of nanomaterials, can solve the problems of difficult control of reaction time and degree of reaction, many surface defects, small diameter of the tube, etc., and achieves microwave power tunability, low deposition pressure, An effect that increases the chance of ionization
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[0029] The schematic diagram of the preparation device of the nitrogen-doped carbon nanotubes of the present invention refers to the attached figure 1 As shown, it includes a cavity 3, an air inlet 5, an air outlet 6, a compressed rectangular waveguide 4, a quartz glass tube 7, and a microwave generator;
[0030] Inside the cavity, a substrate table 1 and a lifting mechanism are provided, and the substrate table 1 is installed on the lifting mechanism;
[0031] An air inlet 5 and an air outlet 6 are opened at the upper and lower ends of the cavity;
[0032] A quartz glass tube 7 is provided in the middle of the cavity, and microwaves are transmitted through the quartz glass tube 7 in the cavity 3;
[0033] The cavity is fixed with a metal flange 2 that can move up and down. The upper metal flange 2 is located above the quartz glass tube 7, and the lower metal flange is located below the quartz glass tube. The cavity 3 consists of the upper and lower metal flanges 2 and the compressed r...
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[0036] Example 1
[0037] (1) Use ethanol and acetone solution to ultrasonically clean the substrate to remove surface impurities. Subsequently, an appropriate amount of carbon nanotube powder sample is placed on the substrate at the center of the substrate stage and placed in a closed cavity, and then the metal flange is sealed to exclude air.
[0038] (2) Evacuate the cavity and introduce nitrogen gas, adjust the nitrogen flow rate and air pressure (the air pressure of the nitrogen in the cavity), and perform microwave irradiation;
[0039] (3) The gas in the cavity absorbs microwave energy to excite plasma, the process parameters used are: nitrogen flow rate is 50sccm, working pressure is 2.0kPa;
[0040] (4) Fill in nitrogen, adjust the gas flow, and wait for the plasma state to stabilize. After the reaction, the microwave source was turned off, and the nitriding sample was taken out after the cavity was cooled. The process parameters used in the experiment were: microwave power ...
Example Embodiment
[0043] Example 2
[0044] (1) Use ethanol and acetone solution to ultrasonically clean the substrate to remove surface impurities. Subsequently, an appropriate amount of carbon nanotube powder sample is placed on the substrate at the center of the substrate stage and placed in the closed cavity, and then the metal flange is sealed to exclude air.
[0045] (2) Evacuate the cavity and introduce nitrogen gas, adjust the nitrogen flow rate and air pressure (the air pressure of the nitrogen in the cavity), and perform microwave irradiation;
[0046] (3) The gas in the cavity absorbs microwave energy to excite plasma. The process parameters used are: nitrogen flow rate 50sccm, working pressure 3.0kPa.
[0047] (4) Introduce nitrogen from the gas inlet, control and adjust the gas flow, and wait for the plasma state to stabilize. After the reaction, turn off the microwave source, wait for the cavity to cool, and take out the samples. The process parameters used in the experiment are: microwa...
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