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Self-rectification organic electric storage device and fabrication method thereof

An electrical storage and self-rectification technology, applied in electrical solid state devices, semiconductor/solid state device manufacturing, circuits, etc., can solve problems such as misreading, and achieve the effects of simple preparation process, increased cycle stability performance, and simple device structure

Active Publication Date: 2018-06-22
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a very serious defect in the cross-shaped structure array: the crosstalk effect of the cross-shaped structure produces a non-negligible leakage current, which leads to some misreading in the process of information reading
Currently, there are no patents on self-rectifying organic memory devices

Method used

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  • Self-rectification organic electric storage device and fabrication method thereof
  • Self-rectification organic electric storage device and fabrication method thereof
  • Self-rectification organic electric storage device and fabrication method thereof

Examples

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Embodiment 1

[0044] A method for preparing a self-rectifying electromechanical memory, comprising the following steps:

[0045] (1) Substrate treatment: ultrasonically clean the silicon wafer substrate in ultrapure water, ethanol, acetone, and isopropanol for 15 min, N 2 Blow dry, process 5min with an oxygen plasma cleaning machine at a power of 80W

[0046](2) Preparation of the bottom electrode: Spin-coat graphene oxide solution on the substrate to obtain a graphene oxide film, and then reduce it in an argon / hydrogen mixed atmosphere at 1100°C for 2 hours to obtain a reduced graphene oxide film; The graphene film is covered with a strip-shaped mask, and aluminum is evaporated to obtain a strip-shaped aluminum film. Then, it is treated with an oxygen plasma cleaner at 80W for 10 minutes to remove the exposed reduced graphene oxide, and finally the aluminum is etched with dilute hydrochloric acid. Rinse with deionized water, N 2 Blow dry to get a strip-shaped reduced graphene oxide array...

Embodiment 2

[0051] A method for preparing a self-rectifying electromechanical memory, comprising the following steps:

[0052] (1) Treatment of the bottom electrode: ultrasonically clean the glass substrate with a 0.5 mm wide strip-shaped ITO electrode in ultrapure water, ethanol, acetone, and isopropanol for 15 min, N 2 Blow dry, and process with an oxygen plasma cleaning machine at a power of 80W for 5min.

[0053] (2) Preparation of the rectifying storage medium layer: spin-coat PEDOT:PSS solution on the bottom electrode, the solid content of PEDOT:PSS solution is 1.5%, the spin-coating speed is 3000rpm, dry, the thickness of PEDOT:PSS film is 30nm; Dissolve carbon dots in water with a concentration of 3mg / ml, spin-coat on PEDOT:PSS film at a spin-coating speed of 3000rpm, and dry; dissolve MEH-PPV in chloroform solution with a concentration of 3mg / ml, spin-coat on On the carbon dot film, spin-coating speed is 3000rpm, drying, the thickness of MEH-PPV film is 30nm.

[0054] (3) Prepa...

Embodiment 3

[0057] A method for preparing a self-rectifying electromechanical memory, comprising the following steps:

[0058] (1) Substrate treatment: ultrasonically clean the silicon wafer substrate in ultrapure water, ethanol, acetone, and isopropanol for 15 min, N 2 Blow dry, process 5min with an oxygen plasma cleaning machine at a power of 80W

[0059] (2) Preparation of the bottom electrode: Spin-coat graphene oxide solution on the substrate to obtain a graphene oxide film, and then reduce it for 2 hours at 1100°C in an argon / hydrogen mixed atmosphere to obtain a reduced graphene oxide film; The graphene film is covered with a strip-shaped mask, and aluminum is evaporated to obtain a strip-shaped aluminum film. Then, it is treated with an oxygen plasma cleaner at 80W for 10 minutes to remove the exposed reduced graphene oxide, and finally the aluminum is etched with dilute hydrochloric acid. Rinse with deionized water, N 2 Blow dry to get a strip-shaped reduced graphene oxide arra...

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Abstract

The invention discloses a self-rectification organic electric storage device and a fabrication method thereof, and belongs to the field of an organic electronic device and information storage. The device mainly employs a carbon point and an organic semiconductor hybrid structure, the rectification effect is achieved by the characteristic that a dual-layer organic semiconductor is not matched withelectrode energy level, and the storage characteristic is achieved by taking the carbon point as a trap to capture carriers. The storage device has the following advantages that (1) the process is simple, and the fabrication cost is reduced; (2) the storage device has relatively high rectification ratio and switch ratio and is good in cycle stability; and (3) the device is simple in structure, andthe storage density is improved.

Description

technical field [0001] The invention relates to the fields of organic electronic devices and information storage. Specifically, it relates to an organic electronic device having both a rectification function and an information storage function. technical background [0002] With the continuous development of microelectronics technology, the information technology industry has become an important pillar of economic development. As the second pillar of the information technology industry, information storage has promoted the arrival of the era of big data. Therefore, the rapid development of information technology has higher requirements for data storage devices, such as faster storage speed, smaller cell size, and storage density. Higher, stronger structural flexibility, simpler preparation process, higher functional intelligence, and lower price and cost. At present, although traditional semiconductor silicon-based memory devices have the advantages of fast storage and lon...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/10H01L51/40
CPCH10K71/12H10K71/60H10K10/26H10K10/82
Inventor 刘举庆卢航黄维陈营营
Owner NANJING UNIV OF TECH
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