A photocathode based on a novel nanostructure and its preparation method
A nanostructure, photocathode technology, applied in the fields of luminescent cathode manufacturing, photoemission cathodes, nanotechnology for materials and surface science, etc. Absorption Enhanced Effect
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Embodiment 1
[0032] see Figure 1 to Figure 3 , the present invention provides a novel nanostructured photocathode, the novel nanostructured photocathode is formed on a substrate 1, the novel nanostructured photocathode comprises a patterned catalytic layer 3, a catalyst layer formed on the catalytic layer 3 Patterned carbon nanotubes 4 and modified metal particles 5 formed on the carbon nanotubes 4 . In addition, the lower surface of the substrate 1 is coated with conductive silver paste or gallium indium solder as a cathode electrode.
[0033] In this embodiment, the material of the substrate 1 is preferably a heavily doped n-type silicon wafer, but it is not limited thereto, and may also be, for example, other types of silicon wafers or a quartz substrate with a transparent conductive layer. The lower surface of the substrate 1 is coated with conductive silver paste or gallium indium solder as a cathode electrode, and the anode uses indium tin oxide (ITO) transparent conductive glass o...
Embodiment 2
[0039] The invention provides a preparation method for the novel nanostructure photocathode of the present invention, see Figure 1 to Figure 3 , the nanostructured photocathode of the present invention is prepared on a substrate material, such as a silicon wafer or a quartz substrate with a transparent conductive layer. In this embodiment, the substrate material is a heavily doped n-type silicon wafer , its specific preparation method is as follows:
[0040] (1) Cleaning of the silicon substrate:
[0041] For example, immerse in diluted HF solution to remove surface oxides, and then use acetone, alcohol and deionized water to clean the surface sequentially with ultrasonic cleaning.
[0042] (2) Photolithography:
[0043] Use a spin coater to pre-rotate the photoresist (positive resist) at 1000r / min for 15s, then pre-rotate at 5000r / min for 60s; bake the spin-coated silicon wafer at 110°C for 90s before cooling; put the mask plate (see figure 2 (a)) Cover the photoresist ...
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