Processing method for copper bonding wire for encapsulation
A processing method, copper wire technology, applied in the direction of electrical components, circuits, electrical solid devices, etc., can solve the problems of insufficient conductivity of copper wire palladium plating, easy oxidation of copper wire, insufficient conductivity of palladium, etc., to improve the oxidation resistance , eliminate residual stress, good electrical conductivity
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Embodiment 1
[0021] The present invention proposes a processing method of bonding copper wire for encapsulation, comprising the following steps:
[0022] S1. Add Cu99.09wt% and Li0.05wt% according to weight percentage, under the protection of nitrogen, melt in a melting furnace at a temperature of 1210 ° C, then add La 0.13wt%, Ce 0.1wt% for melting, and then add Ag 0.45wt% , Sr 0.15wt%, Sn 0.03wt% smelting, through directional solidification to obtain an oxygen-free copper rod;
[0023] S2, cooling the S1 oxygen-free copper rod at minus 45°C for 10 hours;
[0024] S3. Add the oxygen-free copper rod treated by S2 into the drawing machine, and after rough drawing at a speed of 350m / min, under nitrogen protection and annealing temperature of 580°C, anneal for 1.5 hours to obtain a thick copper wire;
[0025] S4. Put the S3 thick copper wire into the drawing machine, finish drawing 3 times at a speed of 140m / min, and anneal for 1 hour under nitrogen protection and annealing temperature of 50...
Embodiment 2
[0027] The present invention proposes a processing method of bonding copper wire for encapsulation, comprising the following steps:
[0028] S1. Add Cu99.24wt% and Li0.03wt% according to weight percentage, under the protection of nitrogen, melt in a melting furnace at a temperature of 1205 ° C, then add La0.12wt%, Ce0.1wt% for melting, and then add Ag0.4wt% , Sr0.1wt%, Sn0.01wt% were smelted, and oxygen-free copper rods were obtained through directional solidification;
[0029] S2, cooling the S1 oxygen-free copper rod at minus 40°C for 11 hours;
[0030] S3. Add the oxygen-free copper rod treated by S2 into the drawing machine, and after rough drawing at a speed of 300m / min, anneal treatment for 1.7 hours under nitrogen protection and annealing temperature of 550° C. to obtain a thick copper wire;
[0031] S4. Put the S3 thick copper wire into the drawing machine, finish drawing 3 times at a speed of 80m / min, and anneal for 1.2 hours under nitrogen protection and annealing t...
Embodiment 3
[0033] The present invention proposes a processing method of bonding copper wire for encapsulation, comprising the following steps:
[0034] S1. Add Cu98.91wt% and Li0.05wt% according to weight percentage, under the protection of nitrogen, melt in a melting furnace at a temperature of 1200 ° C, add La0.15wt%, Ce0.1wt% to continue smelting, and then add Ag0.56wt% , Sr0.2wt%, Sn0.03wt% continue to smelt, and make an oxygen-free copper rod through directional solidification;
[0035] S2, cooling the S1 oxygen-free copper rod at minus 35°C for 11 hours;
[0036] S3. Add the oxygen-free copper rod treated by S2 into the drawing machine, and after rough drawing at a speed of 330m / min, under nitrogen protection and annealing temperature of 540°C, anneal treatment for 1.2 hours to obtain a thick copper wire;
[0037] S4. Put the S3 copper wire into the drawing machine, finish drawing 3 times at a speed of 100m / min, and anneal for 1.2 hours under nitrogen protection and annealing temp...
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