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Method for treating a substrate with an aqueous liquid medium exposed to uv-radiation

A technology for processing substrates and aqueous liquids, applied in the direction of cleaning methods using liquids, originals for photomechanical processing, devices for coating liquids on surfaces, etc., can solve the specific details of the composition of aqueous liquid media that are not given, etc. question

Active Publication Date: 2020-09-15
聚斯微技术光掩模设备两合公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the publication does not give specific details about the composition of the aqueous liquid medium used in the separate steps

Method used

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  • Method for treating a substrate with an aqueous liquid medium exposed to uv-radiation
  • Method for treating a substrate with an aqueous liquid medium exposed to uv-radiation
  • Method for treating a substrate with an aqueous liquid medium exposed to uv-radiation

Examples

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example 1

[0057] In this example, the surface energy of the substrate is tuned using, inter alia, a small amount of absorbing media among otherwise non-absorbing media and switching between them. Previously, as described in DE 10 2009 058 962, in situ UV exposure of substrates by non-absorbing liquids, such as DI-water, was used to tune the surface energy to thereby achieve hydrophilic water contact angle values.

[0058] In this example, the initial preparation steps for an EUV photomask are described. This process step is carried out to adjust the surface energy for optimal media distribution (surfacing); after treatment this process step can result in a water contact angle of <10°.

[0059] Surface refinishing is usually performed in CO2-water. In the case of 254 nm emission, this is a non-absorbing medium. The inventors of the present invention have now found that the choice of a low concentration of absorption medium, such as ozone-water, results in a better and faster resurfacin...

example 2

[0067] Photoresist removal improvement by means of use of different absorbing medium concentrations and optionally at least one of different distances between light source and surface and different emission wavelengths

[0068] introduce:

[0069] Over the past few years, photoresist removal has been performed with the aid of SPM (sulfuric acid + hydrogen peroxide mixture); although its cleaning ability is quite good, this mixture has several shortcoming.

[0070] SPM resist removal has been replaced by an in situ UV process such as the one described in DE 10 2009 058 962 cited above. In a typical procedure, the absorbing medium is treated with UV-light, wherein photoproducts (mainly free radicals) are generated, which then react with the organic layer (resist) on the surface: the absorbing medium used can be of different concentration of ozone water, dissolved oxygen or water itself (which absorbs eg at 185 nm). In the following, some photolysis processes are given as exam...

example 3

[0078] Final cleaning improvements use pH and conductivity adjustments in absorbing and non-absorbing media, where pH and conductivity adjustments can lead to surface protection.

[0079] In this example, we describe improvements to the final cleaning of EUV photomasks. This process step is typically performed after photoresist removal to eliminate any remaining organic (or inorganic) impurities and particles from the photomask surface.

[0080] Usually in CO 2 - Perform final cleaning in water. We show here how a change in pH to alkaline values ​​(>8.5) leads to surface protection.

[0081] introduce:

[0082] The EUV photomask surface consists of an absorber, usually made of tantalum boron nitride (TaBN), and a metallic ruthenium overlay; the ruthenium overlay can degrade during wet cleaning steps; the main root cause of this damage is direct or indirect metal oxidation;

[0083] Ru (metal) + UV-light + oxidizing agent === (oxidized) Ru.

[0084] When ruthenium is fully ...

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Abstract

Methods for processing substrates are described. The method comprises the steps of flowing an aqueous liquid medium through a flow channel and at least one outlet slit onto a substrate to be treated, and at least in a portion of the flow channel immediately adjacent to the at least one outlet slit and after the aqueous liquid medium has After flowing through the outlet opening towards the substrate and thus before and while applying the aqueous liquid medium to the surface of the substrate to be treated, the aqueous liquid medium is allowed to Exposure to UV‑radiation of specific wavelengths. In one method, the conductivity of the aqueous liquid medium is adjusted to be in the range of 20 to 2000 μS by adding additives to the aqueous liquid medium at or before exposing the aqueous liquid medium to UV-radiation. Conductivity below 20 μS prior to addition of the additive. Additionally, the pH of the aqueous liquid medium may be adjusted to a range of 8 to 11 or 3 to 6 at or before exposing the aqueous liquid medium to UV-radiation. Adjustment can lead to shifting the equilibrium of the reactive species generated in the aqueous liquid medium by UV-radiation towards a preferred species.

Description

technical field [0001] The invention relates to a method for treating a substrate with an aqueous liquid medium exposed to UV-radiation. Background technique [0002] In the field of manufacturing semiconductors, several processing steps are performed on semiconductor substrates, commonly called wafers. One of these steps involves photolithography, in which a photomask is used to expose the photoresist on the wafer to a pattern of intense light. Exposure to light causes chemical changes which, according to the pattern, allow some photoresist to be removed by specialized solutions. [0003] In the field of manufacturing semiconductors and especially in photolithography, it is important that all components, such as for example wafers and photomasks, are very clean and preferably have no foreign particles on them. Such requirements also exist in other technologies where surface preparation and / or removal of contaminants, especially organic contaminants such as resists, is imp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20B08B3/10B08B7/00G03F1/82H01L21/67H01L21/02B05B1/00
CPCB08B3/10B08B7/0057G03F1/82G03F7/70925H01L21/67051G03F7/42G03F7/423G03F7/425H01L21/31138H01L21/6708H01L21/67115C11D3/30B05B1/00C11D2111/46C11D2111/22G03F7/20H01L21/306B05D3/002B05D2203/30
Inventor D.达蒂洛U.迪茨S.辛格
Owner 聚斯微技术光掩模设备两合公司