Method for treating a substrate with an aqueous liquid medium exposed to uv-radiation
A technology for processing substrates and aqueous liquids, applied in the direction of cleaning methods using liquids, originals for photomechanical processing, devices for coating liquids on surfaces, etc., can solve the specific details of the composition of aqueous liquid media that are not given, etc. question
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example 1
[0057] In this example, the surface energy of the substrate is tuned using, inter alia, a small amount of absorbing media among otherwise non-absorbing media and switching between them. Previously, as described in DE 10 2009 058 962, in situ UV exposure of substrates by non-absorbing liquids, such as DI-water, was used to tune the surface energy to thereby achieve hydrophilic water contact angle values.
[0058] In this example, the initial preparation steps for an EUV photomask are described. This process step is carried out to adjust the surface energy for optimal media distribution (surfacing); after treatment this process step can result in a water contact angle of <10°.
[0059] Surface refinishing is usually performed in CO2-water. In the case of 254 nm emission, this is a non-absorbing medium. The inventors of the present invention have now found that the choice of a low concentration of absorption medium, such as ozone-water, results in a better and faster resurfacin...
example 2
[0067] Photoresist removal improvement by means of use of different absorbing medium concentrations and optionally at least one of different distances between light source and surface and different emission wavelengths
[0068] introduce:
[0069] Over the past few years, photoresist removal has been performed with the aid of SPM (sulfuric acid + hydrogen peroxide mixture); although its cleaning ability is quite good, this mixture has several shortcoming.
[0070] SPM resist removal has been replaced by an in situ UV process such as the one described in DE 10 2009 058 962 cited above. In a typical procedure, the absorbing medium is treated with UV-light, wherein photoproducts (mainly free radicals) are generated, which then react with the organic layer (resist) on the surface: the absorbing medium used can be of different concentration of ozone water, dissolved oxygen or water itself (which absorbs eg at 185 nm). In the following, some photolysis processes are given as exam...
example 3
[0078] Final cleaning improvements use pH and conductivity adjustments in absorbing and non-absorbing media, where pH and conductivity adjustments can lead to surface protection.
[0079] In this example, we describe improvements to the final cleaning of EUV photomasks. This process step is typically performed after photoresist removal to eliminate any remaining organic (or inorganic) impurities and particles from the photomask surface.
[0080] Usually in CO 2 - Perform final cleaning in water. We show here how a change in pH to alkaline values (>8.5) leads to surface protection.
[0081] introduce:
[0082] The EUV photomask surface consists of an absorber, usually made of tantalum boron nitride (TaBN), and a metallic ruthenium overlay; the ruthenium overlay can degrade during wet cleaning steps; the main root cause of this damage is direct or indirect metal oxidation;
[0083] Ru (metal) + UV-light + oxidizing agent === (oxidized) Ru.
[0084] When ruthenium is fully ...
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