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Composition for removing resist

A composition and resist technology, applied in the directions of detergent compositions, surface active detergent compositions, non-surface active detergent compositions, etc., can solve the problems of slow evaporation speed, interface outflow, slow rotation speed, etc. High solvency, improved productivity, and effect of preventing re-adhesion

Active Publication Date: 2018-07-20
DAICEL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the above-mentioned solvent has the following problem: due to its slow evaporation rate, it tends to permeate into parts of the resist coating film that should not be removed, thereby causing a phenomenon in which the interface of the coating film is eroded and flows out (=smearing phenomenon).
When the solvent is sprayed while the substrate is rotated at high speed, there is a tendency to suppress the occurrence of the smearing phenomenon due to the action of the centrifugal force, but it is particularly problematic when the rotational speed is low and the action of the centrifugal force is difficult to obtain.

Method used

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  • Composition for removing resist
  • Composition for removing resist
  • Composition for removing resist

Examples

Experimental program
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Effect test

preparation example 1

[0169] Preparation example 1 (preparation of polyglycerol derivative (A-1))

[0170] 90 parts by weight of glycerin and 1 part by weight of a 48% by weight NaOH aqueous solution as an alkali catalyst were put into the reaction vessel, and 2-ethylhexylglycidol was added dropwise thereto over 12 hours while maintaining the temperature in the reaction vessel at 100°C. 3540 parts by weight of ether (the amount of 19 mol relative to 1 mol of glycerin) was then aged for 1 hour. Thereafter, 85% by weight of phosphoric acid aqueous solution was added to terminate the reaction to obtain a polyglycerol derivative (A-1).

preparation example 2

[0171] Preparation example 2 (preparation of polyglycerol derivative (A-2))

[0172] In place of glycerin, decaglycerol was used, and the amount of 2-ethylhexyl glycidyl ether used was changed to 10 mol per 1 mol of decaglycerol. In the same manner as in Preparation Example 1, polyglycerol derivatives were obtained. Object (A-2).

preparation example 3

[0173] Preparation example 3 (preparation of polyglycerol derivative (A-3))

[0174] 1500 parts by weight of poly(20) glycerol, 2000 parts by weight of lauric acid (10 mol relative to 1 mol of poly(20) glycerol) and 1 part by weight of 48% by weight sodium hydroxide aqueous solution were put into the reaction vessel, and the , the temperature in the reaction vessel was raised to 200° C. under normal pressure, and the reaction was carried out for 10 hours. After completion of the reaction, the temperature in the reaction container was cooled to normal temperature to obtain a polyglycerol derivative (A-3).

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Abstract

The objective of the invention to provide a composition that can efficiently remove a photoresist adhering to an edge portion and a back surface of a substrate, in a process of producing a mask whichis used when the substrate is subjected to etching treatment to have an element, a circuit etc., formed thereon using the photoresist. The composition for removing a resist of the present invention isa composition comprising a surfactant and a solvent, wherein the composition contains, as the surfactant, at least the following component (A). The component (A) is that: a polyglycerol derivative represented by the following formula (a): RaO-(C3H5O2Ra)n-Ra(a), wherein n represents the number of the repeating units, and is an integer of 2 to 60; and Ra identically or differently represents a hydrogen atom, a C1-18 hydrocarbon group or a C2-24 acyl group, provided that at least two of the (n+2) number of Ra are C1-18 hydrocarbon groups and / or C2-24 acyl groups.

Description

technical field [0001] The present invention relates to a composition for removing light adhering to the edge and back surface of a substrate in the process of manufacturing a mask used when etching a substrate to form elements, circuits, etc., using a photoresist use of resists. This application claims priority based on Japanese Patent Application No. 2017-002539 for which it applied in Japan on January 11, 2017, and uses the content here. Background technique [0002] In the manufacture of semiconductor devices (transistors, capacitors, memories, light-emitting elements, solar cells, etc.) and electronic equipment (various displays, etc.), photolithography including the following steps is used as a method of forming elements and circuits on substrates Eclipse method. [0003] [1] A photoresist is coated on a substrate to form a resist coating film. [0004] [2] The resist coating film is irradiated with light through a photomask on which patterns of elements and circuit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/42C11D1/72C11D3/2068C11D7/263G03F7/425C11D2111/22C11D1/66C11D3/43C11D1/008H01L21/31133G03F7/426C11D3/3765C11D3/2065C11D1/722C11D3/3757
Inventor 坂西裕一
Owner DAICEL CORP
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