A subcritical reaction preparation method of three atomic layer high-quality graphene materials

A high-quality, graphene technology, applied in graphene, chemical instruments and methods, nano-carbon, etc., can solve the problems of reaching hundreds of hours, difficult substrates, complicated processes, etc., to provide peeling force and avoid re-stacking. Effect
CN108314026BInactive Publication Date: 2020-09-01射阳县新港污水处理有限公司
1 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
射阳县新港污水处理有限公司
Publication Date
2020-09-01
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a subcritical preparation method of three-atomic-layer high-quality graphene. The subcritical preparation method comprises the following steps: iodine bromide is used as an intercalation agent to prepare a three-order graphene intercalation compound, then the three-order graphene intercalation compound is placed in a subcritical water environment, an intercalation agent (iodine bromide) is dissolved in water and generates violent reaction with water in a graphite layer, the violent reaction and the high-pressure permeation action of the subcritical water environment acton a graphite sheet layer, and by peeling, the graphene material with the three-atomic-layer thickness is obtained. The subcritical preparation method provided by the invention has the beneficial effects that the adopted subcritical reaction temperature is 100-240 DEG C, so that the subcritical preparation method is suitable for industrial or laboratory operation; due to rapid reaction, the subcritical preparation method is suitable for preparing large-laminar graphene materials with three-atomic-layer thickness and can be used for the fields of transparent conducting films, energy storage devices and superconductors and the like.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of preparation of high-quality graphene materials, in particular to a method for rapidly and controllably preparing three-atom-layer high-quality graphene materials by using subcritical reactions. Background technique

[0002] Graphene is a completely sp 2 The quasi-two-dimensional crystal material composed of hybrid carbon atoms with a thickness of only one atomic layer or several single atomic layers is almost completely transparent, has high thermal conductivity, high electron mobility at room temperature, and is the material with the smallest resistivity in the world. It is also the thinnest yet hardest nanomaterial in the world. Graphene can be used to develop a new generation of thinner and faster conductive electronic components, transparent touch screens, high-performance nanoelectronic devices, optoelectronic devices, and can also be used in gas sensors, composite materials, field emission materials and ener...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More