Unlock instant, AI-driven research and patent intelligence for your innovation.

Synthesis and application of a two-dimensional material of tantalum telluride

A two-dimensional material, field effect transistor technology, applied in the field of nanomaterials

Active Publication Date: 2019-10-08
HUNAN UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although TaTe 2 have such unique properties, but the current research on them is mostly based on theoretical calculations or bulk single crystals, and there is an urgent need to successfully prepare ultra-thin TaTe in experiments 2 single crystals and study them in greater depth

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Synthesis and application of a two-dimensional material of tantalum telluride
  • Synthesis and application of a two-dimensional material of tantalum telluride
  • Synthesis and application of a two-dimensional material of tantalum telluride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0111] TaTe 2 Preparation of nanosheets:

[0112] will hold TaCl 5 The porcelain boat of the powder is placed upstream of the tube furnace (the temperature is 200°C, which is the volatilization temperature), and the porcelain boat with tellurium powder is placed at 4cm from the center of the constant temperature zone (the temperature is 620°C), and a piece of Si / 285nm SiO 2 as TaTe 2 The bright side of the growth substrate is placed between the porcelain boat 4 and the porcelain boat 5 to obtain a suitable crystal growth temperature. TaCl 5 The mass ratio of powder and Te powder is 1:1 (0.1g / 0.1g). Before heating, exhaust the air in the quartz tube with a large flow of argon. Then the constant temperature zone 2 is heated up to 620°C (deposition temperature), and the flow rate of the argon-hydrogen mixed gas is 30 / 7sccm, and the constant temperature is 10min, and there will be a single crystal TaTe on the silicon wafer. 2 Nanosheet generation. TaTe 2 The experimental ...

Embodiment 2

[0115] Compared with Example 1, the difference is that TaCl 5 The powder volatilization temperature is 200°C, the substrate temperature is 620°C (deposition temperature is 620°C), TaCl 5 The mass ratio of powder and Te powder is 1:1 (0.1g / 0.1g), the flow rate is 40 / 10 sccm, the position of tellurium powder is 4cm from the center of the constant temperature zone (temperature is 610°C), and the deposition time is 10min. Figure 6 shows the prepared TaTe 2 Optical schematic diagram of nanosheet, Si / SiO 2 The base is light red and the red triangle is TaTe 2 ; Wherein, the thickness is 8 nm, and the size is 10 μm. Figure 6 The scale bar in is 10 μm.

Embodiment 3

[0117] Compared with Example 1, the difference is that TaCl 5 The powder volatilization temperature is 200°C, the substrate temperature is 620°C (deposition temperature is 620°C), TaCl 5 The mass ratio of powder to Te powder is 1:1 (0.1g / 0.1g), the flow rate is 20 / 5 sccm, the position of tellurium powder is 4cm from the center of the constant temperature zone (temperature is 610°C), and the deposition time is 10min. Figure 7 shows the prepared TaTe 2 Optical schematic diagram of nanosheet, Si / SiO 2 The base is light red and the white hexagons are TaTe 2 ; Wherein, the thickness is 50-100nm, and the size is 5-8μm. Figure 7 The scale bar in is 10 μm

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of two-dimensional material preparation, and particularly discloses a preparation method of a TaTe2 (Telluride Tantalum) two-dimensional material. The preparation method is characterized in that TaCl5 and Te powder are heated to volatilize and grow on the surface of a substrate to prepare the TaTe2 two-dimensional material at the deposition temperature of 620 to700 DEG C under the action of a carrier gas, wherein the carrier gas is a mixed atmosphere of a protective gas and H2; the flow rate of the protective gas is 20 to 40 sccm; the flow rate of the H2 is5 to 10 sccm. The invention also discloses the TaTe2 two-dimensional material prepared by the preparation method, and application of the material in preparation of optical devices. According to the preparation method of the TaTe2 two-dimensional material, the technical problems that the activity of Te is low and the two-dimensional material is difficult to prepare are solved; the TaTe2 two-dimensional material is successfully synthesized for the first time; moreover, through a great number of researches, the TaTe2 two-dimensional material with excellent performance is prepared.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and specifically relates to a two-dimensional material of tantalum telluride, its preparation and its application in magnetism in electrical and optoelectronic devices. [0002] technical background [0003] The discovery of graphene has triggered a research boom in the scientific community on two-dimensional layered materials, especially for the exploration of MoS 2 New physical and chemical properties of the representative two-dimensional transition metal dichalcogenides (2D-TMDs) at the atomic level [1-2] . The interlayer force of 2D transition metal dichalcogenides is the van der Waals force, which makes 2D-TMDs easily exfoliated into single or few layers. Transition metal dichalcogenides (TMDs) are a class of general formula MX 2 layered material, where M is a transition metal element (Ti, V, Ta, Mo, W, Re, etc.), X is a chalcogen atom (S, Se, Te, etc.); the theoretical calculation of ta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00H01L29/78H01L29/24G01R33/12C30B29/46
Inventor 段曦东段镶锋赵蓓
Owner HUNAN UNIV