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Light absorption layer material of solar cell, wide-band-gap perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve problems such as increasing production costs, achieve the effects of reducing production costs, facilitating large-area roll-to-roll production, and inhibiting phase separation

Active Publication Date: 2018-08-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, doped Spiro-OMeTAD and gold electrodes are used on the material, which greatly increases the production cost

Method used

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  • Light absorption layer material of solar cell, wide-band-gap perovskite solar cell and preparation method thereof
  • Light absorption layer material of solar cell, wide-band-gap perovskite solar cell and preparation method thereof
  • Light absorption layer material of solar cell, wide-band-gap perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Step 1: Configure the perovskite precursor solution

[0053] (1) 196.1mg FAI, 19.5mg CsI, 276.6mg PbI 2 , 330.3mg PbBr 2 , 47.8mg MAI was mixed and dissolved in a mixed solvent of 800ulDMF and 200ulDMSO to prepare a perovskite precursor solution corresponding to the molar amount of Pb, recorded as 1% mol MAI-rich perovskite.

[0054] (2) Dissolving fullerene derivative PCBM powder in chlorobenzene solvent to prepare 20 mg / ml PCBM solution.

[0055] (3) Add KOH solution to Ni(NO 3 ) 2 In the aqueous solution, until the pH value reaches 10, stir vigorously to produce a large amount of green precipitate. The separated precipitate was heated in air at 270° C. for 2 h to obtain black nano-NiOx particles. The nano NiOx particles were dissolved in water to prepare a NiOx nanoparticle solution with a concentration of 20 mg / ml.

[0056] Step 2: Preparation of Thin Film Battery

[0057] (1) The glass substrate coated with the ITO layer was ultrasonically cleaned with aceto...

Embodiment 2

[0068] Step 1: Configure the perovskite precursor solution

[0069] (1) 196.1mg FAI, 19.5mg CsI, 276.6mg PbI 2 , 330.3mg PbBr 2 , 50.3mg MAI was mixed and dissolved in a mixed solvent of 800ulDMF and 200ulDMSO to prepare a perovskite precursor solution corresponding to the molar amount of Pb, recorded as 2%mol MAI-rich perovskite.

[0070] (2) Dissolving fullerene derivative PCBM powder in chlorobenzene solvent to prepare 20 mg / ml PCBM solution.

[0071] (3) Add KOH solution to Ni(NO 3 ) 2 In the aqueous solution, until the pH value reaches 10, stir vigorously to produce a large amount of green precipitate. The separated precipitate was heated in air at 270° C. for 2 h to obtain black nano-NiOx particles. The nano NiOx particles were dissolved in water to prepare a NiOx nanoparticle solution with a concentration of 20 mg / ml.

[0072] Step 2: Preparation of Thin Film Battery

[0073] (1) The glass substrate coated with the ITO layer was ultrasonically cleaned with aceton...

Embodiment 3

[0084] Step 1: Configure the perovskite precursor solution

[0085] (1) 196.1mg FAI, 19.5mg CsI, 276.6mg PbI 2 , 330.3mg PbBr 2 , 52.8mg MAI was mixed and dissolved in a mixed solvent of 800ulDMF and 200ulDMSO to prepare a perovskite precursor solution corresponding to the molar amount of Pb, recorded as 3% mol MAI-rich perovskite.

[0086] (2) Dissolving fullerene derivative PCBM powder in chlorobenzene solvent to prepare 20 mg / ml PCBM solution.

[0087] (3) Add KOH solution to Ni(NO 3 ) 2 In the aqueous solution, until the pH value reaches 10, stir vigorously to produce a large amount of green precipitate. The separated precipitate was heated in air at 270° C. for 2 h to obtain black nano-NiOx particles. The nano NiOx particles were dissolved in water to prepare a NiOx nanoparticle solution with a concentration of 20 mg / ml.

[0088] Step 2: Preparation of Thin Film Battery

[0089] The glass substrate coated with the ITO layer was cleaned with acetone, micron-scale se...

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Abstract

The invention discloses a light absorption layer material of a solar cell. The material is a perovskite material with 1-3%mol of remaining methylammonium iodide and in a molecular formula of (FA0.8MA0.2)0.95Cs0.05(I0.6Br0.4)3. The invention also discloses the wide-band-gap perovskite solar cell with the light absorption layer material as well as a preparation method of the solar cell. A light-absorption layer is prepared by adding excessive methylammonium iodide solid into a perovskite precursor solution and heating and crystallizing in an anti-solvent method. The phase separating degree of the perovskite light-absorption layer is reduced, the density of defects of a perovskite film is reduced, the crystallinity and stability of perovskite crystals are improved, an open-circuit voltage anda fill factor of a device can be improved, and the photoelectric conversion efficiency and stability of the solar cell are improved. The prepared solar cell is characterized by low temperature processing, and the cell of a large area can be prepared.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a light-absorbing layer material of a solar cell, a wide band gap perovskite solar cell and a preparation method thereof. Background technique [0002] Due to global warming, air pollution and resource shortages, the energy problem has become a fundamental problem that people need to solve urgently. As the fundamental energy on the earth, among all energy sources, solar energy has many advantages such as safety, no pollution, no geographical restrictions, wide application range, etc., and has attracted much attention from human beings. Inorganic silicon solar cells are still dominant in photovoltaic power generation in the current market, but compared with traditional fossil energy, the price still needs to be lowered. How to reduce the cost of inorganic silicon cells is to reduce the cost of raw materials on the one hand, and to improve the photoelectric conversion efficiency on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/65H10K30/80H10K30/00Y02E10/549
Inventor 叶轩立过配配陈震刘梅月
Owner SOUTH CHINA UNIV OF TECH
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