A kind of method for preparing porous nano-copper structure

Abstract

The invention discloses a method for preparing a porous nano-copper structure. The method comprises the following steps: firstly washing an Si substrate of a deposition sample, and placing the substrate on a sample frame, wherein the sample frame is parallel to a target surface and 55 mm apart from the target surface; while a background air pressure in a vacuum chamber is lower than 6x10-6 mbar, introducing a mixed gas, thereby sputtering a copper target; after the sputter coating, taking out a Cu3N film sample and placing in an SEM sample chamber, vacuumizing, selecting an electron beam lithography mode, regulating the electron beam focusing, controlling a beam spot of an electron beam to be about 1 microns, and performing the electron beam lithography on a Cu3N film selected area; finally, starting an SEM scanning mode, performing the SEM imaging on an exposure area, according to an SEM scanning image result, regulating exposure parameters, until the expected porous nano-copper structure occurs. The method is capable of effectively forming the expected porous nano-copper structure. The porous nano-copper structure has the coarse surface in nano-scale, and has the possibility forgenerating a 'hotspot'.

Description

technical field [0001] The invention belongs to the field of semiconductor film preparation, in particular to a method for preparing a porous nano-copper structure. Background technique [0002] Cuprous nitride (Cu) with anti-ReO3 structure and low decomposition temperature 3 N) Semiconductor materials have very bright application prospects in optical information storage and large-scale integrated circuits. Recently, it has been reported that this material can also be used in spintronic devices, solar cells, fuel cells, magnetic tunnel junctions and other fields, so this system has attracted wide attention internationally. [0003] Cu 3 The stability of N is very poor, and the decomposition temperature is between 100-470°C. After a short-term exposure to electron beams or laser beams, Cu3N semiconductor films will decompose rapidly and locally due to thermal effects, leaving a metal line or forming a series of metal points. , it is the poor thermal stability that has brou...

AI Technical Summary

Problems solved by technology

[0004] The metal copper decomposed by electron beam or laser beam exposure is easy to be oxidized, so the current research on the decomposition products mainly focuses on whether the composition of the product is copper metal, and there are few in-depth and detailed studies on the decomposition products.

Images