Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation technology for metal thin film

A metal thin film and preparation process technology, applied in sustainable manufacturing/processing, final product manufacturing, electrical components, etc., can solve the problems of low efficiency and high preparation cost, and achieve the effect of high bonding strength, stable composition and reduced preparation cost

Inactive Publication Date: 2018-08-21
BEIJING DREAM INK TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, an object of the present invention is to propose a kind of metal thin film preparation method, to solve the problem of high cost and low efficiency in the industrial preparation of metal thin film in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation technology for metal thin film
  • Preparation technology for metal thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Use copper foil as the base material, use organic solvent to remove the oil stain on the surface, then impregnate the copper foil with dilute hydrochloric acid to remove the oxide skin on the surface of the copper layer of the base material, rinse with deionized water to remove the copper ions and chlorine on the surface of the copper layer of the base material ions, then dry the surface with high-purity inert gas at 50-70°C, use 0.5mol / L dilute hydrochloric acid solution as the liquid, put the cleaned copper foil into it, and connect it to the negative electrode; place gallium on the copper foil Located near the negative end of the power supply; insert the platinum electrode, connect to the positive pole of the power supply, and do not contact with copper foil and gallium; control the temperature of the above dilute hydrochloric acid solution to 50°C, adjust the power supply voltage to 12V, power on for 30 minutes, power off, and take out the copper foil and wash. Afte...

Embodiment 2

[0068] Use copper-coated glass as the base material, use organic solvent to remove the oil stain on the surface, then impregnate the copper-coated glass with dilute hydrochloric acid to remove the oxide skin on the surface of the copper layer of the base material, rinse with deionized water to remove the copper ions on the surface of the copper layer of the base material and chlorine ions, then dry the surface with high-purity inert gas at 50-70°C, use 1mol / L dilute sodium hydroxide solution as the liquid, put the cleaned copper-coated glass into it, and connect it to the negative electrode; The alloy is placed on the copper-coated glass at the end close to the negative pole of the power supply; the platinum electrode is inserted and connected to the positive pole of the power supply, and is not in contact with the copper-coated glass and gallium-indium alloy; the temperature of the above dilute sodium hydroxide solution is controlled at 70°C, and the power supply voltage is adj...

Embodiment 3

[0070] Use the copper-plated polymer film as the substrate, remove the oil on the surface with an organic solvent, then impregnate the copper-plated polymer film with dilute hydrochloric acid to remove the oxide skin on the surface of the copper layer of the substrate, rinse with deionized water, and remove the copper layer of the substrate Copper ions and chloride ions on the surface, then dry the surface with high-purity inert gas at 50-70°C, use 0.6mol / L dilute sodium hydroxide solution as the liquid, put the cleaned copper-plated polymer film into it, and Connect to the negative pole; place the gallium-indium alloy on the copper-plated polymer film at the end close to the negative pole of the power supply; insert the platinum electrode and connect it to the positive pole of the power supply without contacting the copper-plated polymer film and gallium; control the above dilute sodium hydroxide solution The temperature is 20°C, the voltage is adjusted to 6V, the power is tur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Concentrationaaaaaaaaaa
Login to View More

Abstract

Provided is a preparation technology for metal thin film. The method comprises the steps that a parent material and a base material are placed in a same conducting solution, and the contact between the parent material and the base material is kept; the parent material is driven to diffuse on the base material through the movement of electrons in the conducting solution to form the metal thin film.The chemical composition of the metal thin film is CuGaa, wherein a is greater than 0 and less than or equal to 7, or CuGabInc, b is greater than 0 and less than or equal to 7, and c is greater than0 and less than or equal to 7, or CuGadIneSef, wherein d is greater than 0 and less than or equal to 7, e is greater than 0 and less than or equal to 7, and f is greater than 0 and less than or equalto 7. The preparation technology for the metal thin film has the following advantages that (1) the vacuum environment is not needed, and the equipment investment is not high; (2) the film layer crystallinity degree is high, compositions are stable, and the bonding strength is high; (3) toxic compounds are not needed to be used, and the metal thin film is green and environmentally-friendly; (4) themetal thin film can be prepared under a self-diving mode without an additional power supply; and (5) a large area of film preparation can be achieved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic cell equipment, and in particular relates to a metal film preparation process. Background technique [0002] Energy is an important material basis for economic and social development. At present, more than 90% of the world's industrial energy is provided by fossil energy such as coal, oil and natural gas. No matter from the perspective of the world or China, conventional energy is very limited. Therefore, with the gradual reduction of fossil energy and the increasingly serious environmental pollution, the development of new, environmentally friendly renewable energy and energy conversion technology has attracted great attention from all countries in the world. Among them, the solar cell power generation technology using photoelectric conversion is the best choice to solve the above two problems of energy and environment at the same time, so the research and development of solar cells are att...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 白安洋陈柏炜于洋
Owner BEIJING DREAM INK TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products