Preparation method of graphene

Abstract

The invention belongs to the technical field of graphene preparation and manufacture, and particularly relates to a preparation method of graphene. The preparation method comprises the following stepsthat a carbon material is acquired, the carbon material is grinded to form structurally dispersed and relatively pulverized graphite particles; high-temperature oxidation is carried out on the graphite particles to form graphite oxide particles, the temperature is 600 DEG C or above; the graphite oxide particles are put into a graphene preparation system, the graphene preparation system is turnedon, the graphene preparation system performs microwave irradiation and tremor on the graphite oxide particles to form the desired graphene; and after the graphene is produced, the graphene is collected. The preparation method of the graphene has the advantages that the preparation method of the graphene is optimized, the graphite oxide particles can be rapidly irradiated by microwave and reducedto graphene, the preparation speed is fast, the graphene can be quickly collected, the stripped graphene is prevented from being continuously heated to be deformed or buckled, and the preparation efficiency and quality of the graphene are improved.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation and manufacture, in particular to a graphene preparation method. Background technique [0002] Single-layer graphite is considered an ideal material due to its large specific surface area, excellent electrical and thermal conductivity, and low thermal expansion coefficient. In particular, its high conductivity, large specific surface properties and its two-dimensional nanoscale structural properties of monomolecular layers can be used as electrode materials in supercapacitors and lithium-ion batteries. [0003] The preparation techniques of graphene include: mechanical exfoliation method, chemical vapor deposition method, epitaxial crystal growth method, redox method, etc. The mechanical exfoliation method uses mechanical exfoliation of graphite to obtain pure graphene flakes, but it cannot be mass-produced due to the low yield. Chemical vapor deposition method or epitaxial crystal ...

AI Technical Summary

Problems solved by technology

The mechanical exfoliation method is to use mechanical exfoliation of graphite to obtain pure graphene flakes, but it cannot be mass-produced due to the low yield

Chemical vapor deposition method or epitaxial crystal growth method is to use thermally cracked hydrocarbon gas source and deposit it on nickel sheet or copper sheet to prepare graphene, which is characterized by the preparation of large-area single-layer or multi-layer graphene , but its disadvantage is that the uniformity and thickness are difficult to control; in addition, growing graphene on an insulator substrate, for example, very thin graphene can be grown on the surface of silicon carbide, the disadvantage is that it is expensive and difficult to prepare a large area

The traditional redox method is to use graphite powder or graphite fiber to chemically exfoliate with strong oxidants such as sulfuric acid and nitric acid or other oxidation treatments to produce functionalized graphite oxide, and then use a high temperature furnace to oxidize The graphite composite rapidly expands and peels off, but if the stripped graphene is not collected quickly, it is prone to deformation and warping, which makes the quality of graphene vary; at the same time, the stripped graphene is easy to be burned or even burned in high temperature air. It is easy to cause fire, which brings a potential safety threat to the industrial application of graphene production

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