Optical detector of Van der Waals heterojunction based on two-dimensional indium selenide and black phosphorus and manufacturing thereof
A photodetector and indium selenide technology, applied in the field of photodetection, can solve the problems of low light absorption and luminescence efficiency, large dark current, limitation, etc., and achieve the effects of improving detection sensitivity, reducing response time, and reducing noise
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0044] Example 1
[0045] Such as figure 1 As shown, a photodetector based on a van der Waals heterojunction of two-dimensional indium selenide and black phosphorous includes a silicon substrate 1 and a silicon dioxide oxide layer 2 disposed on the silicon substrate 1. The silicon dioxide oxide layer 2 is provided with a p-type black phosphorous layer 4, the p-type black phosphorous layer 4 is provided with an n-type indium selenide layer 3, the p-type black phosphorous layer 4 and n-type selenium The indium layer 3 constitutes a van der Waals pn heterojunction;
[0046] The n-type indium selenide layer 3 is provided with a drain electrode, the p-type black phosphorous layer 4 is provided with a source electrode 6, and the silicon substrate 1 is provided on the side opposite to the silicon dioxide oxide layer 2 There is a gate electrode 7.
[0047] The thickness of the p-type black phosphorous layer 4 described in this embodiment is 10 nm, which is about 18 layers;
[0048] The th...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap