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Flexible antimony selenide thin film solar cell and preparation method thereof

A technology of solar cells and antimony selenide, which is applied to circuits, electrical components, photovoltaic power generation, etc., can solve the problems of damage to flexible substrates, difficulty in preparing high-quality thin films, poor crystallinity of thin films, etc., and achieves high energy conversion efficiency and preparation method. The effect of simple controllability and excellent bending properties

Active Publication Date: 2018-08-24
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the deposition rate is too fast, it is difficult to prepare high-quality films. If the substrate temperature is too low, the crystallinity of the film will be poor, which will affect the device performance. If the substrate temperature is too high, it will cause certain damage to the flexible substrate.

Method used

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  • Flexible antimony selenide thin film solar cell and preparation method thereof
  • Flexible antimony selenide thin film solar cell and preparation method thereof
  • Flexible antimony selenide thin film solar cell and preparation method thereof

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preparation example Construction

[0032] The flexible thin-film solar cell prepared by the present invention has a structural schematic diagram as figure 1 As shown, its specific structure is flexible substrate / ITO transparent conductive electrode / CdS film / Sb 2 Se 3 Film / Au electrode, the flexible substrate is polyimide, the thickness of the ITO transparent conductive electrode is 200nm-250nm, the thickness of the CdS film is 60nm-70nm, and the thickness of the antimony selenide film is 800nm- 1000nm, the thickness of the gold electrode is 80nm-100nm. The preparation method of the thin film solar cell comprises the following steps:

[0033] (1) With the rigid material as a support, the flexible substrate polyimide (PI) is placed on the rigid material glass, and the ITO transparent conductive electrode is deposited on the flexible substrate by magnetron sputtering. Polyimide (PI) flexible substrate has the characteristics of high transparency, high heat resistance and high acid and alkali resistance. Specif...

Embodiment 1

[0040] (1) Clean the glass-supported PI flexible substrate with deionized water, acetone, isopropanol, ethanol and deionized water in sequence for 10 minutes each, and then dry it with a nitrogen gun;

[0041] (2) Using magnetron sputtering to sputter ITO transparent conductive electrodes on the PI substrate, the thickness is 200nm, the transmittance is 78%, and the sheet resistance is 15Ωsq -1 ;

[0042] (3) Utilize the chemical water bath deposition method, the precursor is cadmium sulfate, ammonia water and thiourea, prepare CdS thin film on ITO conductive substrate, its thickness is 60nm;

[0043] (4) The antimony selenide thin film was prepared by vapor phase transfer deposition method, antimony selenide powder was used as the evaporation source, the vacuum degree was controlled at 3.0 Pa, the substrate temperature was 300 ° C, the temperature of the evaporation source was heated to 520 ° C, and the evaporation time was 3 min. The thickness of the antimony selenide film ...

Embodiment 2

[0047] (1) Clean the glass-supported PI flexible substrate with deionized water, acetone, isopropanol, ethanol and deionized water in sequence for 10 minutes each, and then dry it with a nitrogen gun;

[0048] (2) Use magnetron sputtering to sputter ITO transparent conductive electrodes on the PI substrate, the thickness is 250nm, the transmittance is 75%, and the sheet resistance is 10Ωsq -1 ;

[0049] (3) Using the chemical water bath deposition method, the precursor is cadmium sulfate, ammonia water and thiourea, and a CdS film is prepared on the ITO conductive substrate with a thickness of 70nm;

[0050] (4) The antimony selenide thin film was prepared by vapor phase transfer deposition method, antimony selenide powder was used as the evaporation source, the vacuum degree was controlled at 3.4 Pa, the substrate temperature was 350 ° C, the temperature of the evaporation source was heated to 540 ° C, and the evaporation time was 4 min. The thickness of the antimony selenid...

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Abstract

The invention discloses a flexible antimony selenide (Sb2Se3) thin film solar cell and a preparation method thereof. The method comprises the concrete steps that 1) an ITO conductive substrate is deposited on a polyimide (PI) flexible substrate (with the glass acting as the support); 2) a cadmium sulfide (CdS) film is deposited on the flexible conductive substrate; and 3) a Sb2Se3 film is deposited on the CdS film in an evaporation way and then counter electrode material is deposited on the Sb2Se3 film so as to form the counter electrode material, the PI flexible substrate is stripped from theglass and then the flexible antimony selenide thin film solar cell can be prepared. The preparation method is simple, and the flexible antimony selenide thin film solar cell is successfully preparedfor the first time.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and thin-film solar cell preparation, and more specifically relates to a flexible antimony selenide thin-film solar cell and a preparation method thereof. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ) is a simple binary compound, and the chemical constituent elements antimony and selenium are both high-reserve and low-toxic elements. Due to their suitable band gap (~1.2eV) and high absorption coefficient (short-wave absorption coefficient>10 5 cm -1 ), antimony selenide, as a thin-film photovoltaic absorber material, has attracted much attention in recent years. The development of antimony selenide thin-film solar cells is also very rapid. In just five years, the energy conversion efficiency of 6.5% has been certified. [0003] As a one-dimensional chain material, antimony selenide has mechanical properties similar to polymer compounds, which allow the flexibility of an...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0445H01L31/0392
CPCH01L31/0392H01L31/03926H01L31/0445H01L31/18Y02E10/50Y02P70/50
Inventor 唐江李康华牛广达李夫丁瑞卿王斯羽屠国力
Owner HUAZHONG UNIV OF SCI & TECH
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