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Si-based dual-faced solar cell structure based on local emitting electrode features

A double-sided solar cell and emitter technology, which is applied in the field of solar cells to achieve the effects of reducing recombination loss, increasing voltage, and increasing built-in potential

Active Publication Date: 2018-08-28
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These two regions are distributed across and do not overlap

Method used

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  • Si-based dual-faced solar cell structure based on local emitting electrode features

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Embodiment 1

[0020] as attached figure 1 A Si-based double-sided solar cell structure with localized emitter characteristics is shown. The surface of the n-type crystalline silicon chip 5 adopts a pyramid textured structure with an average size of 3 microns in the regions where the passivation anti-reflection layer I 3 and the passivation anti-reflection layer II 7 are located. Both the electrode layer 2 and the heavily doped crystalline silicon field passivation layer 6 regions adopt a chemically polished surface structure (no texturing). The heavily doped n-type crystalline silicon field passivation layer I 4 has a thickness of 300nm; the heavily doped crystalline silicon field passivation layer 6 is n-type doped with a thickness of 5nm; the passivation anti-reflection layer II 7 is aluminum oxide + nitride Silicon composite film. The metal grid line I 1 and the metal grid line II 9 are nickel / copper / silver composite metal electrodes starting from the surface of the silicon wafer, occu...

Embodiment 2

[0023] as attached figure 1 A Si-based double-sided solar cell structure with localized emitter characteristics is shown. The surface of the n-type crystalline silicon chip 5 adopts a pyramid textured structure with an average size of 2 microns. The heavily doped n-type crystalline silicon field passivation layer I 4 has a thickness of 300nm; the heavily doped crystalline silicon field passivation layer 6 is n-type doped with a thickness of 5nm; the passivation anti-reflection layer II 7 is silicon oxide + nitride Silicon composite film. Metal grid lines I 1 and metal grid lines II 9 are pure silver electrodes, occupying 1.5% of the surface area of ​​the silicon wafer. The groove width of the metal gate line I 1 and the metal gate line II 9 is 10 μm, and the groove width of the heavily doped p-type crystalline silicon emitter layer 2 and the n-type heavily doped crystalline silicon layer 8 is 8 μm.

[0024] Both surfaces of the solar cell structure have excellent light-inco...

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Abstract

A Si-based dual-faced solar cell structure based on local emitting electrode features takes an n-type crystal silicon wafer as a substrate, an emitting electrode surface of the Si-based dual-faced solar cell structure is divided into an emitting electrode-conductive area and a passivating-in-light area; the emitting electrode-conductive area is formed by a heavy doping p-type crystalline silicon emitting electrode layer and a metal gate line I, and the passivating-in-light area is formed by a heavy doping n-type crystalline silicon field passivation layer I and a passivation antireflection layer I; a back electric field surface is divided into a passivating-in-light area and a back electric field-conductive area; the passivating-in-light area is formed by a heavy doping crystalline siliconlayer and a passivation antireflection layer II; and the back electric field-conductive area is formed by heavy doping crystalline silicon and a metal gate line II. On the premise of maintaining thefeatures of dual-faced in-light of the crystalline silicon solar cell, the features of a higher open-circuit voltage and a higher short-circuit circuit are obtained, and the generation capacity of thecrystalline silicon solar cell is improved to the maximum extent.

Description

technical field [0001] The invention belongs to the fields of solar cells and semiconductor devices. It involves the preparation technology of solar cells. Background technique [0002] For double-sided crystalline silicon solar cells, the PERT structure has been focused on by the solar cell industry because of its good compatibility with the existing diffusion-junction crystalline silicon production line and its relatively high efficiency. However, the development of solar cells with this structure has encountered a bottleneck, one of which is the performance of the emitter layer formed by boron diffusion and its preparation technology. In order to achieve a higher open circuit voltage, the boron doping concentration must be high, but this will lead to an increase in carrier recombination. Moreover, the low square resistance required for the lateral transmission loss of carriers in the boron-doped layer is contradictory to the technical improvement direction of increasing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068
CPCH01L31/0684Y02E10/547
Inventor 袁吉仁周浪黄海宾高超岳之浩
Owner NANCHANG UNIV
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