Homogenous crystal silicon double-sided solar cell structure with light incidence areas which are not covered by heavy doping layers

Abstract

Provided is a homogenous crystal silicon double-sided solar cell structure with light incidence areas which are not covered by heavy doping layers. An n-type crystal silicon sheet is adopted as a substrate, an emitter surface is divided into an emitter conducting area and the first passivated light incidence area, wherein the emitter conducting area is composed of a heavy doping p-type crystal silicon emitter layer and a metal grid line I from the substrate to the exterior in sequence, and the first passivated light incidence area is composed of a passivated antireflection layer I; a back electric field surface is divided into the second passivated light incidence area and a back electric field conducting area, wherein the second passivated light incidence area includes a heavy doping n-type crystal silicon layer II and a passivated antireflection layer II from the substrate to the exterior in sequence, and the back electric field conducting area includes a heavy doping n-type crystalsilicon layer II and a metal grid line II from the substrate to the exterior in sequence. On the premise of ensuring the double-sided light incidence characteristic of a crystal silicon solar cell, higher open-circuit voltage and higher short circuit current are obtained, and the power generation capability of the crystal silicon solar cell is improved to the maximum extent.

Description

technical field [0001] The invention belongs to the fields of solar cells and semiconductor devices. It involves the preparation technology of solar cells. Background technique [0002] For double-sided crystalline silicon solar cells, the PERT structure has been focused on by the solar cell industry because of its good compatibility with the existing diffusion-junction crystalline silicon production line and its relatively high efficiency. However, the development of solar cells with this structure has encountered a bottleneck, one of which is the performance of the emitter layer formed by boron diffusion and its preparation technology. In order to achieve a higher open circuit voltage, the boron doping concentration must be high, but this will lead to an increase in carrier recombination. Moreover, the low square resistance required for the lateral transmission loss of carriers in the boron-doped layer and the increased boron doping concentration required to achieve this...

AI Technical Summary

Problems solved by technology

In order to achieve a higher open circuit voltage, the boron doping concentration must be high, but this will lead to an increase in carrier recombination

Moreover, the low square resistance required for the lateral transmission loss of carriers in the boron-doped layer and the increased boron doping concentration required to achieve this condition (increasing the concentration will bring about a decrease in carrier mobility and an increase in recombination rate) The direction of technological improvement is contradictory

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