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A kind of solar cell and preparation method thereof

A technology of solar cells and evaporation method, which is applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency of solar cells, and achieve the effects of facilitating transmission, increasing service life, and improving electrical conductivity

Active Publication Date: 2019-08-16
南通北外滩建设工程有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the material of the hole transport layer commonly used in the existing organic-inorganic hybrid solar cells is P3HT. Due to the low carrier migration of P3HT, the photoelectric conversion efficiency of the corresponding organic-inorganic hybrid solar cells is low.

Method used

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  • A kind of solar cell and preparation method thereof

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preparation example Construction

[0017] A kind of preparation method of the solar cell that the specific embodiment of the present invention proposes comprises the following steps: (1) the preparation of the black silicon layer on the surface of the n-type silicon chip; (2) the preparation of the ferroelectric material passivation film on the surface of the black silicon layer; ( 3) Preparation of a high-conductivity P3HT layer on the surface of a ferroelectric material passivation film: the front side of the n-type silicon wafer obtained in step (2) is spin-coated with P3HT solution, evaporated metal copper, spin-coated P3HT, evaporated metal copper, Spin-coating P3HT solution, vapor-depositing metal copper, and then annealing to form the high-conductivity P3HT layer; (4) preparation of the front electrode; (5) zinc oxide / lithium fluoride composite insertion layer on the back of the n-type silicon wafer (6) Preparation of the back aluminum electrode.

[0018] Wherein, in the step (1), a black silicon layer i...

Embodiment 1

[0021] A preparation method of a solar cell, comprising the following steps: (1) preparation of a black silicon layer on the surface of an n-type silicon wafer; (2) preparation of a ferroelectric passivation film on the surface of the black silicon layer; (3) passivation of the ferroelectric material Preparation of the high-conductivity P3HT layer on the surface of the film: the front of the n-type silicon wafer obtained in step (2) is successively spin-coated with P3HT solution, evaporated metal copper, spin-coated P3HT, evaporated metal copper, spin-coated with P3HT solution, evaporated Metal copper, followed by annealing to form the high-conductivity P3HT layer; (4) preparation of the front electrode; (5) preparation of the zinc oxide / lithium fluoride composite insertion layer on the back of the n-type silicon wafer; (6) the back Preparation of aluminum electrodes.

[0022] Wherein, in the step (1), a black silicon layer is formed on the surface of the n-type silicon wafer ...

Embodiment 2

[0025] A preparation method of a solar cell, comprising the following steps: (1) preparation of a black silicon layer on the surface of an n-type silicon wafer; (2) preparation of a ferroelectric passivation film on the surface of the black silicon layer; (3) passivation of the ferroelectric material Preparation of the high-conductivity P3HT layer on the surface of the film: the front of the n-type silicon wafer obtained in step (2) is successively spin-coated with P3HT solution, evaporated metal copper, spin-coated P3HT, evaporated metal copper, spin-coated with P3HT solution, evaporated Metal copper, followed by annealing to form the high-conductivity P3HT layer; (4) preparation of the front electrode; (5) preparation of the zinc oxide / lithium fluoride composite insertion layer on the back of the n-type silicon wafer; (6) the back Preparation of aluminum electrodes.

[0026]Wherein, in the step (1), a black silicon layer is formed on the surface of the n-type silicon wafer b...

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Abstract

The invention relates to a solar cell and a preparation method thereof. The preparation method of the solar cell comprises: preparation of a black silicon layer on the surface of an n-type silicon wafer; preparation of a ferroelectric material passivation film on the surface of the black silicon layer; passivation of the ferroelectric material Preparation of high-conductivity P3HT layer on the surface of the film; preparation of the front electrode; preparation of the zinc oxide / lithium fluoride composite insertion layer on the back of the n-type silicon wafer; preparation of the back aluminum electrode. By preparing a high-conductivity P3HT layer and a zinc oxide / lithium fluoride composite intercalation layer, the transport properties of holes and electrons are simultaneously improved, thereby improving the photoelectric conversion efficiency of solar cells.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof. Background technique [0002] Inorganic solar cells such as monocrystalline silicon, gallium arsenide, and copper indium gallium selenide cannot be used on a large scale because of their high cost. Organic solar cells have attracted people's attention due to their cheap raw materials, simple manufacturing process, low cost, and good flexibility, and have been developed rapidly in recent years. However, the biggest defect of organic solar cells is that their photoelectric conversion efficiency is much lower than that of inorganic solar cells. Solar battery. Therefore, hybrid solar cells based on inorganic semiconductor materials and organic semiconductor materials have attracted more and more attention. Organic-inorganic hybrid solar cells provide a process technology that can simplify the preparation process and reduce productio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K30/865H10K50/15H10K50/80H10K71/00
Inventor 胡进蔡赛
Owner 南通北外滩建设工程有限公司
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