Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of silicon photovoltaic cell and preparation method thereof

A battery and silicon light technology, applied in the field of solar cells, can solve the problems of unsatisfactory passivation effect, complicated process and increased manufacturing cost.

Active Publication Date: 2021-07-30
JINWAN GAOJING SOLAR ENERGY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the preparation process of the existing organic-inorganic hybrid solar cells, it is necessary to passivate the surface of the silicon substrate first, and then prepare the hole transport layer. The above-mentioned process is relatively complicated, which increases the manufacturing cost, and the passivation The photoelectric conversion efficiency of the organic-inorganic hybrid solar cell is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of silicon photovoltaic cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0017] A method for preparing a silicon photovoltaic cell proposed by a specific embodiment of the present invention includes the following steps: (1) preparing an array of silicon nanowires on the surface of an n-type silicon wafer; (2) preparing chlorobenzene containing insulating nanoparticles and Spiro-OMeTAD The solution is spin-coated on the silicon nanowire array of the n-type silicon wafer by spin coating, and annealed; (3) Preparation of the PEDOT:PSS layer: the front surface of the n-type silicon wafer obtained in step (2) is spun Coating with PEDOT:PSS solution and annealing; (4) Preparation of front electrode; (5) Preparation of 8-hydroxyquinoline-lithium / lithium fluoride composite interface layer on the back of n-type silicon wafer; (6) Backside aluminum electrode preparation.

[0018] Wherein, in the step (1), a silicon nanowire array is formed on the surface of the n-type silicon wafer by wet etching or dry etching, and then immersed in a hydrofluoric acid solut...

Embodiment 1

[0021] A method for preparing a silicon photovoltaic cell, comprising the following steps: (1) preparing an array of silicon nanowires on the surface of an n-type silicon wafer; (2) spin-coating a chlorobenzene solution containing insulating nanoparticles and Spiro-OMeTAD on the surface of the silicon photovoltaic cell by a spin coating method (3) Preparation of PEDOT:PSS layer: spin-coating PEDOT:PSS solution on the front of the n-type silicon wafer obtained in step (2), and annealing treatment; (4) preparation of front electrode; (5) preparation of 8-hydroxyquinoline-lithium / lithium fluoride composite interface layer on the back of n-type silicon wafer; (6) preparation of back aluminum electrode

[0022] Wherein, in the step (1), a silicon nanowire array is formed on the surface of the n-type silicon wafer by wet etching, and then immersed in a hydrofluoric acid solution to remove the natural oxide layer on the surface of the silicon nanowire. In the step (2), the concentrat...

Embodiment 2

[0025]A method for preparing a silicon photovoltaic cell, comprising the following steps: (1) preparing an array of silicon nanowires on the surface of an n-type silicon wafer; (2) spin-coating a chlorobenzene solution containing insulating nanoparticles and Spiro-OMeTAD on the surface of the silicon photovoltaic cell by a spin coating method (3) Preparation of PEDOT:PSS layer: spin-coating PEDOT:PSS solution on the front of the n-type silicon wafer obtained in step (2), and annealing treatment; (4) preparation of front electrode; (5) preparation of 8-hydroxyquinoline-lithium / lithium fluoride composite interface layer on the back of n-type silicon wafer; (6) preparation of back aluminum electrode

[0026] Wherein, in the step (1), a silicon nanowire array is formed on the surface of the n-type silicon wafer by wet etching, and then immersed in a hydrofluoric acid solution to remove the natural oxide layer on the surface of the silicon nanowire. In the step (2), the concentrati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Concentrationaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a silicon photovoltaic cell and a preparation method thereof. The preparation method of the silicon photovoltaic cell comprises: the preparation of a silicon nanowire array on the surface of an n-type silicon wafer; passing a chlorobenzene solution containing insulating nanoparticles and Spiro-OMeTAD through a spinner The coating method is spin-coated on the n-type silicon wafer, and annealed; then the PEDOT:PSS solution is spin-coated on the n-type silicon wafer, and annealed, and the preparation of the front electrode; the back side of the n-type silicon wafer is 8-hydroxyquinoline- Preparation of lithium / lithium fluoride composite interfacial layer; preparation of back aluminum electrode. By spin-coating a chlorobenzene solution containing insulating nanoparticles and Spiro-OMeTAD, the insulating nanoparticles will be deposited on the surface of the n-type silicon wafer while the Spiro-OMeTAD layer is formed, effectively reducing the defect states on the surface of the n-type silicon wafer and reducing silicon The surface recombination rate of photovoltaic cells can improve the photoelectric conversion efficiency of solar cells.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon photovoltaic cell and a preparation method thereof. Background technique [0002] Inorganic solar cells such as monocrystalline silicon, gallium arsenide, and copper indium gallium selenide cannot be used on a large scale due to their high cost. Organic solar cells have attracted attention due to their advantages of cheap raw materials, simple manufacturing process, low cost and good flexibility, and have developed rapidly in recent years. However, the biggest drawback of organic solar cells is that their photoelectric conversion efficiency is much lower than that of inorganic solar cells. Solar battery. Therefore, hybrid solar cells based on inorganic semiconductor materials and organic semiconductor materials have attracted more and more attention. Organic-inorganic hybrid solar cells provide a process technology that can simplify the preparation process and redu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/10H10K30/81Y02E10/549
Inventor 张军
Owner JINWAN GAOJING SOLAR ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com