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Schottky solar cell and production method thereof

A technology for solar cells and back electrodes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complicated process, high manufacturing cost of silicon-based cells, high processing temperature, etc. Potential, the effect of increasing the short-circuit current

Active Publication Date: 2017-05-10
ZHENGZHOU UNIVERSITY OF AERONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A lot of research has been done on traditional silicon-based solar cells. However, due to the complex process and high processing temperature, the manufacturing cost of silicon-based solar cells has been high and it is difficult to compete with conventional energy sources.

Method used

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  • Schottky solar cell and production method thereof
  • Schottky solar cell and production method thereof
  • Schottky solar cell and production method thereof

Examples

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preparation example Construction

[0029] A method for preparing a Schottky solar cell, comprising the steps of:

[0030] a: Prepare a semiconductor layer, that is, cover the semiconductor on the substrate, then use a mixed solution of acetone and alcohol to sonicate in the ultrasonic wave for 20-35 minutes, then repeatedly rinse with deionized water several times to wash off the acetone and alcohol, and dry it with nitrogen for backup use;

[0031] b: a magnetron sputtering system is used on the front side of the above-mentioned dried semiconductor layer, the target material is high-purity graphite and copper, the sputtering gas is argon, and sputtering has insulation and high light transmittance on the semiconductor layer. Carbon film, and then prepare copper film by in-situ sputtering on the carbon film; then anneal heat treatment by CVD technology, and catalyze the formation of single-layer or multi-layer graphene between the copper film and the carbon film in contact with the copper film, which is graphene...

Embodiment 1

[0040] As shown in the figure: a Schottky solar cell that is a graphene / amorphous carbon / silicon dioxide Schottky solar cell, including an aluminum metal with a thickness of 300-3000nm as the back electrode, and a conductive silver with a thickness of 300-3000nm The glue is the positive electrode grid line and the semiconductor layer. The semiconductor layer is prepared by covering the silicon dioxide film 2 on the N-type single crystal silicon substrate 1, and its thickness is 10-300μm; it also includes amorphous carbon film I and graphene layer, the amorphous carbon film I is located between the semiconductor layer and the graphene layer; the front of the semiconductor layer is the amorphous carbon film I, and its thickness is 1.7-59.7nm; the back is the back electrode, and the window on the front of the graphene layer is surrounded by positive electrode grid line; the graphene layer is the anode, and its thickness is 0.3nm. Described graphene / amorphous carbon / silicon dioxid...

Embodiment 2

[0046] A Schottky solar cell is a graphene / amorphous carbon / silicon dioxide Schottky solar cell, comprising an aluminum metal with a thickness of 300-3000nm, i.e. a back electrode, and a conductive silver glue with a thickness of 300-3000nm, i.e. a positive electrode grid Wire and semiconductor layer, the semiconductor layer is prepared by covering a silicon dioxide film on an N-type single crystal silicon substrate, and its thickness is 10-300µm; it also includes an amorphous carbon film Ⅰ and a graphene layer, an amorphous carbon film Ⅰ It is located between the semiconductor layer and the graphene layer; the front side of the semiconductor layer is an amorphous carbon film I with a thickness of 1.4-59.7nm; the back side is the back electrode, and there are positive electrode grid lines around the window on the front side of the graphene layer; the graphene layer is the anode , its thickness is 0.3-0.6nm;.

[0047] The above-mentioned graphene / amorphous carbon / silicon dioxid...

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Abstract

The invention provides a Schottky solar cell and a production method thereof. The Schottky solar cell comprises a back electrode, an anode grid line, a semiconductor layer, an amorphous carbon thin film I and a graphene layer, wherein the graphene layer is catalytically generated between a copper thin film and a carbon thin film contacting with the copper thin film; the amorphous carbon thin film I is located between the semiconductor layer and the graphene layer; the amorphous carbon thin film I is arranged on the front side of the semiconductor layer, and the back electrode is arranged on the back side of the semiconductor layer; the anode grid line is arranged on the periphery of a window on the front side of the graphene layer, and the graphene layer is an anode. The production method includes: the carbon thin film is sputtered onto the semiconductor layer, the copper thin film is then sputtered, the amorphous carbon of the carbon thin film is catalyzed at a position between the copper thin film and the carbon thin film contacting with the copper thin film to generate graphene, the generated graphene layer is quite thin, and the amorphous carbon thin film I is the carbon thin film which does not participate in the catalyzing and is located between the graphene layer and the semiconductor layer. By the arrangement, the electron separation ability and electron hole ability in the semiconductor layer are increased, interface quality is increased, and the Schottky solar cell is allowed to have high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a Schottky solar cell and a preparation method thereof. Background technique [0002] Nowadays, with the depletion of coal and petroleum energy resources and the increasing environmental pollution, research on green renewable new energy has become the top priority of current and future scientific research work. The solar cell uses photoelectric conversion technology to directly convert solar energy into electrical energy to meet daily power supply needs. This is one of the most effective ways to solve the energy crisis and environmental pollution at present. As early as 1876, when British scientists were studying semiconductor materials, they discovered that when sunlight irradiates semiconductor materials, it will generate current like a volt battery, and the photovoltaic effect has been paid attention to by people since then. Subsequently, Bell Laboratories of the United ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/07H01L31/18
CPCH01L31/07H01L31/1804Y02E10/547Y02P70/50
Inventor 许坤刘星付林杰胥伟力李艳王玉梅麻华丽曾凡光杜银霄陈雷明
Owner ZHENGZHOU UNIVERSITY OF AERONAUTICS
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