A high-frequency withstand voltage film capacitor
A thin-film capacitor and withstand voltage technology, applied in thin-film/thick-film capacitors, multilayer capacitors, fixed capacitor components, etc., to achieve high repeatability, solve high-temperature sintering problems, and optimize film performance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0013] The preparation process of thin film capacitors is as follows: First, the SiO 2 The substrate is ultrasonically cleaned; then, the TiO 2 With TeO 2 The powder is mixed and heated at a temperature of 550℃ to obtain TiTe 3 O 8 ; According to the mass ratio of 1:0.1, TiTe 3 O 8 With MnO 2 Mix and perform 24 h ball milling; add 5% mass fraction of PVA particles, press the mixture into a shape under a pressure of 18 MPa, put it in a heating furnace, and sinter at 600 ℃; after natural cooling, place it in vacuum drying Box drying; using vacuum evaporation method, in SiO 2 On the substrate, prepare Cu / Ni bottom electrode; by radio frequency sputtering, deposit Cu / Ni SiO 2 On the base, TiTe is deposited 3 O 8 -MnO 2 The dielectric film has a sputtering power of 200 W; it is annealed at 400 ℃ to promote the growth of the film; finally, the Cu layer is deposited by vacuum evaporation as the upper electrode to obtain the MIM film capacitor.
Embodiment 2
[0015] The preparation process of thin film capacitors is as follows: First, the SiO 2 The substrate is ultrasonically cleaned; then, the TiO 2 With TeO 2 The powder is mixed and heated at a temperature of 550℃ to obtain TiTe 3 O 8 ; According to the mass ratio of 1:0.2, TiTe 3 O 8 With MnO 2 Mix and perform 24 h ball milling; add 5% mass fraction of PVA particles, press the mixture into a shape under a pressure of 18 MPa, put it in a heating furnace, and sinter at 600 ℃; after natural cooling, place it in vacuum drying Box drying; using vacuum evaporation method, in SiO 2 On the substrate, prepare Cu / Ni bottom electrode; by radio frequency sputtering, deposit Cu / Ni SiO 2 On the base, TiTe is deposited 3 O 8 -MnO 2 The dielectric film has a sputtering power of 200 W; it is annealed at 400 ℃ to promote the growth of the film; finally, the Cu layer is deposited by vacuum evaporation as the upper electrode to obtain the MIM film capacitor.
Embodiment 3
[0017] The preparation process of thin film capacitors is as follows: First, the SiO 2 The substrate is ultrasonically cleaned; then, the TiO 2 With TeO 2 The powder is mixed and heated at a temperature of 550℃ to obtain TiTe 3 O 8 ; According to the mass ratio of 1:0.4, TiTe 3 O 8 With MnO 2 Mix and perform 24 h ball milling; add 5% mass fraction of PVA particles, press the mixture into a shape under a pressure of 18 MPa, put it in a heating furnace, and sinter at 600 ℃; after natural cooling, place it in vacuum drying Box drying; using vacuum evaporation method, in SiO 2 On the substrate, prepare Cu / Ni bottom electrode; by radio frequency sputtering, deposit Cu / Ni SiO 2 On the base, TiTe is deposited 3 O 8 -MnO 2 The dielectric film has a sputtering power of 200 W; it is annealed at 400 ℃ to promote the growth of the film; finally, the Cu layer is deposited by vacuum evaporation as the upper electrode to obtain the MIM film capacitor.
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 
PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.
