34results about How to "Stable Frequency Characteristics" patented technology

The present invention belongs to a technical field of an integrated circuit, and particularly to a low power consumption production line analog-digital converter which adopts an operational amplifier sharing. The analog-digital converter is composed of an input sampling holding circuit, a six-stage allowance gain circuit, an one-stage double-digit all-parallel analog-digital converter, a converting switch which is used for operational amplifier sharing, six sub-analog-digital converters, six sub-digital-analog converters, a production line output clock synchronous circuit and a digital correcting circuit. The sampling holding circuit and the six-stage allowance gain circuit are connected in sequence. The last stage is a double-digit all-parallel analog-digital converter. The input end of each stage of allowance gain circuit is connected with each stage of sub-analog-digital converter. Two continuous stages shares one operational amplifier. After the output clock synchronous circuit, the data with 14 digits is obtained, and after the digital correction of the digital correcting circuit, the final eight digit quantized output is obtained. The analog-digital converter realizes high speed and low power consumption.

An IDT electrode 2 and an electrode pad 3 are formed on one principal face of a piezoelectric substrate 1 and a circular electrode 4 is formed so as to surround these components. The circular electrode 4 is connected to a radiating conductor 15 formed on a bottom face of a circuit board 11 through a via conductor 14 formed within the circuit board 11. Thus, since heat generated in the IDT electrode 2 is easy to be released to the outside through the circular electrode 4, the via conductor 14 and the radiating conductor 15, adverse effects due to the heat can be prevented, thereby improving high power durability.

The invention discloses a pipeline structure module converter for sampling and outputting in the integral circuit technological domain, which comprises the following parts: sampling keeping circuit, 8-grade residual gain pipeline, 1-grade 2-bit full parallel module converter, 8 module converters, 8 submodule converters, pipeline output and clock synchronous circuit and digital correcting circuit, wherein the sampling keeping circuit adopts gate voltage bootstrap switch technology and capacitance turning sampling keeping structure. The invention improves signal input bandwidth, which is fit for signal conversion of larger-frequency scale.

The invention discloses a method for preparing a binary alternatively-doped BST membrane, belongs to the technical field of functional materials, and relates to a method for preparing a nanocrystalline BST membrane. The method adopts binary doping of Mn and Y, namely, carries out Mn or Y doping on an odd layer membrane and carries out Y or Mn doping on an even layer membrane; and the method adds a pre-crystallization processing step between cooling and crystallization steps. The membrane prepared by the method is smooth and compact with no crack or shrinkage cavity, and can greatly enhance the comprehensive dielectric tuning performance of the nanocrystalline BST membrane; and the obtained nanocrystalline BST membrane has a dielectric tuning rate of over 30.0 percent, a dielectric loss of less than 2.0 percent, a K factor of greater than 15.5, a high dielectric strength and a stable frequency characteristic and a temperature characteristic. The nanocrystalline BST membrane prepared by the method can be used for preparing a microwave tuning device (such as a phase shifter) instead of a ferrite and a semiconductor so as to remarkably reduce the manufacturing cost of the microwave tuning device; and furthermore, the nanocrystalline BST membrane prepared by the method is applicable for magnetic recording, pyroelectric focal plane arrays and the like.

A portable acoustic apparatus includes a sound outlet (3) formed in the front wall (61) of a housing (6); an acoustic converting element (1) fixed in the housing in such a manner that a front chamber (2) is formed between the acoustic converting element and the front wall (61), and a back chamber (4) is formed between the acoustic converting element and the back wall (62) of the housing (6); and a duct (5) that is formed in the front wall (61) around the sound outlet (3) and communicates to the outside of the housing. The minimum inner width W of the outer casing (63) of the housing (6) is made equal to or less than the standard diameter of the human concha.

In a high-frequency circuit having a substrate having a high-frequency transmission line and an dielectric resonator formed on said substrate so that said dielectric resonator and said high-frequency transmission line may be coupled electro-magnetically to each other, a hole part or a cavity part is formed at a part of said substrate and a dielectric resonator is embedded in said hole part or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator is produced by the step for forming a high-frequency transmission line on a substrate, the step for forming a hole part or a cavity part on a part of the substrate, and the step for mounting a dielectric resonator in the hole par formed on the surface of the substrate.

A method for manufacturing a quartz crystal resonator that includes a quartz crystal blank having a vibrating portion including a center of a principal surface of the quartz crystal blank when viewed in plan from a direction normal to the principal surface and a peripheral portion adjacent to the vibrating portion, a pair of excitation electrodes disposed opposite to each other with the vibrating portion interposed therebetween, a pair of electrode pads disposed on the peripheral portion, and a pair of extended electrodes each extending from the vibrating portion to the peripheral portion to electrically connect one excitation electrode to a corresponding electrode pad, where the method includes conducting a first trimming of the vibrating portion and the peripheral portion; and conducting a second trimming of part of one of the excitation electrodes on the vibrating portion.

A stripline filter with wide-band filter characteristics having an attenuation pole on a high frequency side of frequency characteristics. The stripline filter includes at least three resonant lines, and two of the resonant lines include parallel line parts and bent parts. The third resonant line has a U shape in which both ends thereof are open and interdigitally coupled to the two resonant lines located on both sides thereof. The parallel line parts extend from base ends connected to a ground electrode via side surface lines that are parallel to respective line parts of the third resonant line. The bent parts extend so as to be bent from ends of the parallel line parts, and face each other at an interval.

A frequency-current conversion circuit permits stabilization of the frequency characteristic of an equalizer that is used in a high-speed optical disc apparatus. The frequency-current conversion circuit includes a comparison circuit that includes a first capacitor that is charged by an output reference current and is forcibly discharged over a predetermined period from the change point of the input clock of the input clock terminal, and that compares the voltage produced in the first capacitor with a reference voltage, a charging/discharging circuit that includes a second capacitor that is charged and discharged in accordance with the output of the comparison circuit and that outputs a voltage that is produced in the second capacitor, a sample and hold circuit that samples and holds the output voltage of the charging/discharging circuit within the predetermined period, and a voltage-current conversion circuit that converts the held voltage to the output reference current and an output current that is proportional to the output reference current.

An amplifying circuit based on a current feedback operational amplifier to realize common-mode rejection of high-frequency signals, which is composed of cascaded n-level instrumentation amplifier circuits, wherein, n≥1, and the instrumentation amplifier circuits of each level are composed of two current-feedback The non-inverting input terminal of the current feedback operational amplifier B1 is connected to the spike signal source, and the same input terminal of the current feedback operational amplifier A1 is connected to the avalanche signal source (the avalanche signal will be superimposed on the spike signal), and the current The output terminal of the feedback operational amplifier An and the output terminal of the current feedback operational amplifier Bn are respectively connected to two input terminals of a radio frequency transformer T. The present invention solves the technical defect that high differential mode gain cannot be achieved by using radio frequency amplifiers, and has the characteristics of high common mode rejection ratio; its high bandwidth characteristics meet the requirements of high frequency signal processing, and at the same time, the method of cascaded gain solves the problem caused by The problem of limited gain of the current feedback method also achieves the purpose of realizing high-precision identification of avalanche signals.

Surface acoustic wave element and its manufacturing method. An object of the present invention is to provide a surface acoustic wave element having excellent frequency characteristics and pass characteristics, and a method of manufacturing the surface acoustic wave element. As a solution, the surface acoustic wave element (10) is formed with a semiconductor wiring region (20) and a SAW region (30) side by side on the same plane of the semiconductor substrate (silicon layer 50), and a grid pattern is formed on the wafer (1). Arranging the surface acoustic wave element (10), and arranging the semiconductor wiring regions (20) and the SAW regions (30) formed on the adjacent surface acoustic wave elements (10) in an alternate grid pattern, in the semiconductor wiring region (20) Insulating layers (71-74) on the same plane are formed on the top of the SAW region (30), and a piezoelectric layer (90) is formed on the surface of the uppermost insulating layer (74). In the SAW region (30) An IDT (40) is formed on the surface of the piezoelectric layer (90).

An antenna includes a dielectric substrate and an antenna element, wherein the dielectric substrate has a mark on an outer surface, the mark having a lower relative permittivity than the dielectric substrate, the antenna element is formed from a FPC film, and the FPC film has an antenna electrode on one side and a flexible insulating film with an adhesive layer on the other side and is adhered to the outer surface of the dielectric substrate with a tip or bend of the antenna electrode aligned with the mark.

A ceramic capacitor includes: a first conductive pattern; a second conductive pattern and a dielectric layer, the first conductive pattern and the second conductive pattern being made of a conductor and provided so as to oppose each other and sandwich the dielectric layer therebetween. The first conductive pattern and the second conductive pattern are different in area from each other, where the second conductive pattern is smaller than the first conductive pattern, and a portion where the first conductive pattern and the second conductive pattern overlap each other forms a capacitance portion. A first extended portion and a second extended portion made of the conductor are formed at both edges of the second conductive pattern so as to extend in mutually opposite directions. With this configuration, the ceramic capacitor with a reduced variation in capacitance value caused by displacement in lamination of green sheets can be provided.

The invention discloses a preparation method of a multilayer BST (Barium Strontium Titanate) film based on gradient pre-crystallization heat treatment, belonging to the technical field of functional materials. According to the preparation method, in a process of preparing a multilayer BST film by layers, the BST prepared by layers are subjected to gradient pre-crystallization heat treatment. The BST film based on the gradient pre-crystallization heat treatment has the characteristics of growth along a crystal surface (110), constant and low growth speed, average crystal grain of 20-30 nm, clear crystal boundary, small grain gap, smoothness and compactness, no cracks, no shrinkage cavity, small dielectric temperature coefficient, stable frequency characteristic, and remarkably improved comprehensive dielectric performance. A dielectric constant is 322-398, the tuning rate is 34.5-46.3 percent, the dielectric loss is 0.55-0.97 percent, the leakage current density is 4.2*10<-9>-9.0*10<-8>A/cm<2>, the dielectric temperature coefficient is 1.3*10<-3>-3.4*10<-3>/K, the high-quality factor is 42.9-76.1, and the microwave practicability of the BST film can be met.