35results about How to "Stable Frequency Characteristics" patented technology

The present invention belongs to a technical field of an integrated circuit, and particularly to a low power consumption production line analog-digital converter which adopts an operational amplifier sharing. The analog-digital converter is composed of an input sampling holding circuit, a six-stage allowance gain circuit, an one-stage double-digit all-parallel analog-digital converter, a converting switch which is used for operational amplifier sharing, six sub-analog-digital converters, six sub-digital-analog converters, a production line output clock synchronous circuit and a digital correcting circuit. The sampling holding circuit and the six-stage allowance gain circuit are connected in sequence. The last stage is a double-digit all-parallel analog-digital converter. The input end of each stage of allowance gain circuit is connected with each stage of sub-analog-digital converter. Two continuous stages shares one operational amplifier. After the output clock synchronous circuit, the data with 14 digits is obtained, and after the digital correction of the digital correcting circuit, the final eight digit quantized output is obtained. The analog-digital converter realizes high speed and low power consumption.

It is possible to provide a radio IC device and a radio IC device part having stable frequency characteristic. The radio IC device includes: a radio IC chip (5); a feed circuit substrate (10) having the radio IC chip (5) mounted thereon and a feed circuit (16) containing a resonance circuit having a predetermined resonance frequency; and an emission plate (20) bonded to the lower surface of the feed circuit substrate (10) for emitting the transmission signal supplied from the feed circuit (16) and supplying the reception signal to the feed circuit (16). The resonance circuit is formed by an LC resonance circuit having an inductance element (L) and capacitance elements (C1, C2). The feed circuit substrate (10) is a multi-layer or single-layer rigid substrate and connected to the radio IC chip (5) and the emission plate (20) by DC coupling, magnetic coupling, or capacity coupling.

A headphone down mix signal (314) can be efficiently derived from a parametric down mix of a multi-channel signal (312), when modified HRTFs (310) (head related transfer functions) are derived from HRTFs (308) of a multi-channel signal using a level parameter (306) having information on a level relation between two channels of the multi-channel signals such that a modified HRTF (310) is stronger influenced by the HRTF (308) of a channel having a higher level than by the HRTF (308) of a channel having a lower level. Modified HRTFs (310) are derived within the decoding process taking into account the relative strength of the channels associated to the HRTFs (308). The HRTFs (308) are thus modified such that a down mix signal (314) of a parametric representation of a multi-channel signal can directly be used to synthesize the headphone down mix signal (314) without the need of an intermediate full parametric multi-channel reconstruction of the parametric down mix.

An IDT electrode 2 and an electrode pad 3 are formed on one principal face of a piezoelectric substrate 1 and a circular electrode 4 is formed so as to surround these components. The circular electrode 4 is connected to a radiating conductor 15 formed on a bottom face of a circuit board 11 through a via conductor 14 formed within the circuit board 11. Thus, since heat generated in the IDT electrode 2 is easy to be released to the outside through the circular electrode 4, the via conductor 14 and the radiating conductor 15, adverse effects due to the heat can be prevented, thereby improving high power durability.

The invention discloses a pipeline structure module converter for sampling and outputting in the integral circuit technological domain, which comprises the following parts: sampling keeping circuit, 8-grade residual gain pipeline, 1-grade 2-bit full parallel module converter, 8 module converters, 8 submodule converters, pipeline output and clock synchronous circuit and digital correcting circuit, wherein the sampling keeping circuit adopts gate voltage bootstrap switch technology and capacitance turning sampling keeping structure. The invention improves signal input bandwidth, which is fit for signal conversion of larger-frequency scale.

The invention discloses a method for preparing a binary alternatively-doped BST membrane, belongs to the technical field of functional materials, and relates to a method for preparing a nanocrystalline BST membrane. The method adopts binary doping of Mn and Y, namely, carries out Mn or Y doping on an odd layer membrane and carries out Y or Mn doping on an even layer membrane; and the method adds a pre-crystallization processing step between cooling and crystallization steps. The membrane prepared by the method is smooth and compact with no crack or shrinkage cavity, and can greatly enhance the comprehensive dielectric tuning performance of the nanocrystalline BST membrane; and the obtained nanocrystalline BST membrane has a dielectric tuning rate of over 30.0 percent, a dielectric loss of less than 2.0 percent, a K factor of greater than 15.5, a high dielectric strength and a stable frequency characteristic and a temperature characteristic. The nanocrystalline BST membrane prepared by the method can be used for preparing a microwave tuning device (such as a phase shifter) instead of a ferrite and a semiconductor so as to remarkably reduce the manufacturing cost of the microwave tuning device; and furthermore, the nanocrystalline BST membrane prepared by the method is applicable for magnetic recording, pyroelectric focal plane arrays and the like.

A portable acoustic apparatus includes a sound outlet (3) formed in the front wall (61) of a housing (6); an acoustic converting element (1) fixed in the housing in such a manner that a front chamber (2) is formed between the acoustic converting element and the front wall (61), and a back chamber (4) is formed between the acoustic converting element and the back wall (62) of the housing (6); and a duct (5) that is formed in the front wall (61) around the sound outlet (3) and communicates to the outside of the housing. The minimum inner width W of the outer casing (63) of the housing (6) is made equal to or less than the standard diameter of the human concha.

In a high-frequency circuit having a substrate having a high-frequency transmission line and an dielectric resonator formed on said substrate so that said dielectric resonator and said high-frequency transmission line may be coupled electro-magnetically to each other, a hole part or a cavity part is formed at a part of said substrate and a dielectric resonator is embedded in said hole part or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator is produced by the step for forming a high-frequency transmission line on a substrate, the step for forming a hole part or a cavity part on a part of the substrate, and the step for mounting a dielectric resonator in the hole par formed on the surface of the substrate.

A method for manufacturing a quartz crystal resonator that includes a quartz crystal blank having a vibrating portion including a center of a principal surface of the quartz crystal blank when viewed in plan from a direction normal to the principal surface and a peripheral portion adjacent to the vibrating portion, a pair of excitation electrodes disposed opposite to each other with the vibrating portion interposed therebetween, a pair of electrode pads disposed on the peripheral portion, and a pair of extended electrodes each extending from the vibrating portion to the peripheral portion to electrically connect one excitation electrode to a corresponding electrode pad, where the method includes conducting a first trimming of the vibrating portion and the peripheral portion; and conducting a second trimming of part of one of the excitation electrodes on the vibrating portion.

The invention provides a power supply circuit which can be mounted on a wireless IC device or the like, has stable frequency characteristics and can achieve a wide frequency band. The power supply circuit 16 is connected with a wireless IC chip 5 and includes a resonant circuit having a predetermined resonance frequency. A radiation plate 20 radiates a transmission signal supplied from the power supply circuit 16 and receives a reception signal to supply it to the power supply circuit 16. The power supply circuit 16 includes inductance elements L1, L2 formed in a coil-shaped electrode pattern and the inductance elements L1, L2 are electrically connected in parallel with each other and magnetically coupled with each other.

A stripline filter with wide-band filter characteristics having an attenuation pole on a high frequency side of frequency characteristics. The stripline filter includes at least three resonant lines, and two of the resonant lines include parallel line parts and bent parts. The third resonant line has a U shape in which both ends thereof are open and interdigitally coupled to the two resonant lines located on both sides thereof. The parallel line parts extend from base ends connected to a ground electrode via side surface lines that are parallel to respective line parts of the third resonant line. The bent parts extend so as to be bent from ends of the parallel line parts, and face each other at an interval.

A frequency-current conversion circuit permits stabilization of the frequency characteristic of an equalizer that is used in a high-speed optical disc apparatus. The frequency-current conversion circuit includes a comparison circuit that includes a first capacitor that is charged by an output reference current and is forcibly discharged over a predetermined period from the change point of the input clock of the input clock terminal, and that compares the voltage produced in the first capacitor with a reference voltage, a charging / discharging circuit that includes a second capacitor that is charged and discharged in accordance with the output of the comparison circuit and that outputs a voltage that is produced in the second capacitor, a sample and hold circuit that samples and holds the output voltage of the charging / discharging circuit within the predetermined period, and a voltage-current conversion circuit that converts the held voltage to the output reference current and an output current that is proportional to the output reference current.

The invention discloses a voltage or current measurement device and a voltage or current measurement method for a random waveform and a random point. The method comprises the steps of in defining waveform data, respectively setting measurement events for different waveform sequences, after the waveform is transmitted through a high-speed differential D / A converter and a backend processing circuit, loading the waveform from an external port to a loading end; sampling the voltage or current which is applied on the load end by a voltage and current sampling circuit, and after processing by a frontend processing circuit, making a high-speed A / D converter perform data acquisition by an FPGA; and when a certain waveform sequence is output to measurement starting time, storing the acquired voltage or current data into an acquisition memory by a system according to a measurement event which is customized by a user. According to the voltage or current measurement device and the voltage or current measurement method, through applying a series of linear waveforms which can be measured in real time to the load end, voltage change or current change at the load end is observed. The voltage or current measurement device and the voltage or current measurement method can be widely applied in various random waveform generators and semiconductor device analyzers.

There is provided a non-reciprocal circuit element which has a simple structure and superiority in assembly and allows easy achievement of height reduction and size reduction while preventing fracture of a ferrite plate. In the present invention, a central conductor 1 in which respective resonators 3 extending outward are formed between I / O terminals 2a to 2c extending outward in a Y-shape from a central portion, upper and lower ferrite plates 5 and 6 between which the central conductor 1 together with the resonators 3 is sandwiched, and upper and lower magnetic metal plates 7 and 8 between which the upper and lower ferrite plates are sandwiched are stacked, a magnet 10 is arranged on the upper magnetic metal plate 7, and bent portions 4 which are bent in out-of-plane directions and form an interstice G between the central conductor 1 and the upper ferrite plate 5 are formed at respective distal end portions 3a of the resonators 3 of the central conductor 1 such that the upper ferrite plate 5 is provided to be capable of coming into and out of contact with the central conductor 1 due to the elasticity of the bent portions 4. The prevent invention also provides a non-reciprocal circuit element which can obtain good circulator characteristics without excessively increasing the magnetic field strength of a magnet and can be used in a wide band including a high frequency band in particular. To this end, in a non-reciprocal circuit element in which the I / O terminals 2a to 2c are integrally formed, and the upper and lower magnetic metal plates 7 and 8 form a closed magnetic circuit via side plates 9, the upper magnetic metal plate 7 is formed of a material having magnetic permeability lower than that of pure iron and / or is formed to have a thickness t smaller than a thickness T of the lower magnetic metal plate 8.

The invention provides an amplifying circuit for high-frequency signal common mode rejection based on a current feedback operational amplifier. The amplifying circuit is composed of n levels of cascaded instrument amplifying circuits, wherein n is not smaller than 1, each level of instrument amplifying circuit is composed of two current feedback operational amplifiers, the same-phase input end of the current feedback operational amplifier B is connected with a peak signal source, the same-phase input end of the current feedback operational amplifier A is connected with a snow slide signal source (the snow slide signal source is superposed on a peak pulse signal), and the output end of the current feedback operational amplifier An and the output end of the current feedback operational amplifier Bn are respectively connected with the two input ends of the same radio frequency transformer T. The amplifying circuit solves the technical defect that the radio frequency amplifier cannot realize a high difference mode gain and has the advantages of high rejection ratio; and the high bandwidth property satisfies the demand of high frequency signal processing, meanwhile the problem of limited current feedback gain is solved by using the cascaded gain manner, and the objective of high-precision screening of snow slide signals is also achieved.

A wireless IC device and a component for a wireless IC device having a stable frequency characteristic are provided. The wireless IC device includes a wireless IC chip (5), a power feeding circuit (16), where the power feeding circuit (16) includes a resonance circuit having a predetermined resonance frequency, and a radiating plate (20) bonded to a lower surface of the power feeding circuit board (10). The radiating plate (20) radiates a transmission signal supplied from the power feeding circuit (16). The radiating plate (20) further receives and propagates a reception signal to the power feeding circuit (16). The power feeding circuit has an inductance element composed of a coil-shaped electrode pattern. The rolling axis of the coil-shaped electrode pattern is formed in a direction vertical to the radiating plate. The power feeding circuit is magnetically coupled with the radiating plate.

Surface acoustic wave element and its manufacturing method. An object of the present invention is to provide a surface acoustic wave element having excellent frequency characteristics and pass characteristics, and a method of manufacturing the surface acoustic wave element. As a solution, the surface acoustic wave element (10) is formed with a semiconductor wiring region (20) and a SAW region (30) side by side on the same plane of the semiconductor substrate (silicon layer 50), and a grid pattern is formed on the wafer (1). Arranging the surface acoustic wave element (10), and arranging the semiconductor wiring regions (20) and the SAW regions (30) formed on the adjacent surface acoustic wave elements (10) in an alternate grid pattern, in the semiconductor wiring region (20) Insulating layers (71-74) on the same plane are formed on the top of the SAW region (30), and a piezoelectric layer (90) is formed on the surface of the uppermost insulating layer (74). In the SAW region (30) An IDT (40) is formed on the surface of the piezoelectric layer (90).

An antenna includes a dielectric substrate and an antenna element, wherein the dielectric substrate has a mark on an outer surface, the mark having a lower relative permittivity than the dielectric substrate, the antenna element is formed from a FPC film, and the FPC film has an antenna electrode on one side and a flexible insulating film with an adhesive layer on the other side and is adhered to the outer surface of the dielectric substrate with a tip or bend of the antenna electrode aligned with the mark.

The invention discloses a method for preparing a binary alternately doped BST film, which belongs to the technical field of functional materials and relates to a method for preparing a nanocrystalline BST film. The present invention adopts Mn and Y binary doping, that is, Mn or Y doping is performed on the odd-numbered film, and Y or Mn doping is performed on the even-numbered film; at the same time, the "cooling" and "crystallization" steps increase "Pre-crystallization" processing step. The film prepared by the invention is smooth and dense, without cracks and shrinkage cavities, and can greatly improve the comprehensive dielectric tuning performance of the nanocrystalline BST film. The dielectric tuning rate of the obtained nanocrystalline BST film is greater than 30.0%, and the dielectric loss is less than 2.0%. , K factor greater than 15.0, high dielectric strength, stable frequency and temperature characteristics. The nanocrystalline BST film prepared by the present invention can replace ferrite and semiconductor for preparing microwave tuning devices (such as phase shifters), thereby significantly reducing the manufacturing cost of microwave tuning devices; in addition, the prepared nanocrystalline BST of the present invention Thin films can also be used in magnetic recording, pyroelectric focal plane arrays, etc.

The present invention belongs to a technical field of an integrated circuit, and particularly to a low power consumption production line analog-digital converter which adopts an operational amplifier sharing. The analog-digital converter is composed of an input sampling holding circuit, a six-stage allowance gain circuit, an one-stage double-digit all-parallel analog-digital converter, a converting switch which is used for operational amplifier sharing, six sub-analog-digital converters, six sub-digital-analog converters, a production line output clock synchronous circuit and a digital correcting circuit. The sampling holding circuit and the six-stage allowance gain circuit are connected in sequence. The last stage is a double-digit all-parallel analog-digital converter. The input end of each stage of allowance gain circuit is connected with each stage of sub-analog-digital converter. Two continuous stages shares one operational amplifier. After the output clock synchronous circuit, the data with 14 digits is obtained, and after the digital correction of the digital correcting circuit, the final eight digit quantized output is obtained. The analog-digital converter realizes high speed and low power consumption.

The invention discloses a voltage or current measurement device and a voltage or current measurement method for a random waveform and a random point. The method comprises the steps of in defining waveform data, respectively setting measurement events for different waveform sequences, after the waveform is transmitted through a high-speed differential D / A converter and a backend processing circuit, loading the waveform from an external port to a loading end; sampling the voltage or current which is applied on the load end by a voltage and current sampling circuit, and after processing by a frontend processing circuit, making a high-speed A / D converter perform data acquisition by an FPGA; and when a certain waveform sequence is output to measurement starting time, storing the acquired voltage or current data into an acquisition memory by a system according to a measurement event which is customized by a user. According to the voltage or current measurement device and the voltage or current measurement method, through applying a series of linear waveforms which can be measured in real time to the load end, voltage change or current change at the load end is observed. The voltage or current measurement device and the voltage or current measurement method can be widely applied in various random waveform generators and semiconductor device analyzers.

The invention discloses a preparation method of a multilayer BST (Barium Strontium Titanate) film based on gradient pre-crystallization heat treatment, belonging to the technical field of functional materials. According to the preparation method, in a process of preparing a multilayer BST film by layers, the BST prepared by layers are subjected to gradient pre-crystallization heat treatment. The BST film based on the gradient pre-crystallization heat treatment has the characteristics of growth along a crystal surface (110), constant and low growth speed, average crystal grain of 20-30 nm, clear crystal boundary, small grain gap, smoothness and compactness, no cracks, no shrinkage cavity, small dielectric temperature coefficient, stable frequency characteristic, and remarkably improved comprehensive dielectric performance. A dielectric constant is 322-398, the tuning rate is 34.5-46.3 percent, the dielectric loss is 0.55-0.97 percent, the leakage current density is 4.2*10<-9>-9.0*10<-8>A / cm<2>, the dielectric temperature coefficient is 1.3*10<-3>-3.4*10<-3> / K, the high-quality factor is 42.9-76.1, and the microwave practicability of the BST film can be met.

The invention discloses a high-precision 100-watt 9dB attenuation plate. The high-precision 10-watt 9dB attenuation plate comprises a high-thermal-conductivity ceramic substrate which is 5 mm long, 2.5 mm wide and 1 mm thick, the high-thermal-conductivity ceramic substrate is a high-thermal-conductivity aluminum nitride ceramic substrate, symmetric silver paste circuits are printed on the front face of the high-thermal-conductivity aluminum nitride ceramic substrate, five black film-like resistors are printed between the silver paste circuits according to the characteristics of an attenuation circuit, the silver paste circuits and the five black film-like resistors are connected through high-temperature sintering, the back face of the high-thermal-conductivity aluminum nitride ceramic substrate is printed with silver paste, and the symmetric silver paste circuits and the silver paste printed on the back face are connected with the ground through the silver paste. According to the design of the attenuation plate, the design of the completely-symmetric circuits is adopted, various performance indexes such as a VSWR and attenuation precision are fully considered, the situation that original attenuation plates produced domestically can only be applied to low frequency is broken, the application requirements of a current 3G network are met, and all the indexes of the high-precision 100-watt 9dB attenuation plate reach international advanced levels.

A ceramic capacitor includes: a first conductive pattern; a second conductive pattern and a dielectric layer, the first conductive pattern and the second conductive pattern being made of a conductor and provided so as to oppose each other and sandwich the dielectric layer therebetween. The first conductive pattern and the second conductive pattern are different in area from each other, where the second conductive pattern is smaller than the first conductive pattern, and a portion where the first conductive pattern and the second conductive pattern overlap each other forms a capacitance portion. A first extended portion and a second extended portion made of the conductor are formed at both edges of the second conductive pattern so as to extend in mutually opposite directions. With this configuration, the ceramic capacitor with a reduced variation in capacitance value caused by displacement in lamination of green sheets can be provided.

The present invention provides a piezoelectric resonator that suppresses occurrence of secondary vibration. Crystal oscillators of excitation electrodes are formed respectively on two surfaces of a crystal sheet with thickness-shear vibration as the main vibration. A secondary vibration suppression portion with a crystallographic axis being inverted by heat treatment is disposed at a part where the secondary vibration such as profile-shear vibration, flexure vibration or the like is generated in the crystal sheet. Ideally, a plurality of secondary vibration suppression portions are disposed symmetrically relative to the excitation electrodes. Since the oscillation frequency of the secondary vibration at the part is shifted to a low frequency side, negative effect on the main vibration of the crystal oscillators is suppressed. Therefore, a crystal oscillator having stable frequency characteristics can be obtained.

The invention discloses a preparation method of a multilayer BST (Barium Strontium Titanate) film based on gradient pre-crystallization heat treatment, belonging to the technical field of functional materials. According to the preparation method, in a process of preparing a multilayer BST film by layers, the BST prepared by layers are subjected to gradient pre-crystallization heat treatment. The BST film based on the gradient pre-crystallization heat treatment has the characteristics of growth along a crystal surface (110), constant and low growth speed, average crystal grain of 20-30 nm, clear crystal boundary, small grain gap, smoothness and compactness, no cracks, no shrinkage cavity, small dielectric temperature coefficient, stable frequency characteristic, and remarkably improved comprehensive dielectric performance. A dielectric constant is 322-398, the tuning rate is 34.5-46.3 percent, the dielectric loss is 0.55-0.97 percent, the leakage current density is 4.2*10<-9>-9.0*10<-8>A / cm<2>, the dielectric temperature coefficient is 1.3*10<-3>-3.4*10<-3> / K, the high-quality factor is 42.9-76.1, and the microwave practicability of the BST film can be met.

The invention discloses a method for controlling a non-stationary random vibration test. The method comprises the steps of setting test parameters; setting non-stationary random reference signals; performing automatic system check; identifying a transfer function; performing vibration control over a uniaxial periodic cycle: within a single frame time period, respectively executing the steps of calculating a normalization control power spectrum; performing correction calculation to obtain a normalization driving spectrum; performing phase randomization and inverse fast Fourier transform (IFFT) on the normalization driving spectrum, and performing frame lap joint to obtain true random signals; performing calculation update to obtain current driving root mean square gain; and multiplying the driving root mean square gain by driving frame data after the lap joint to calculate and obtain driving output signals of the current frame. Compared with conventional random vibration test control, through the method, not only can the satisfactory spectrum control of the non-stationary random vibration be obtained, but also the non-stationary random signal root mean square can be stably controlled to vary with a time curve, and it is effective and feasible to adopt the control method to implement non-stationary random vibration test control.