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Large-flake graphite/metal heterojunction composite thin film for heat conducting and preparation method thereof

A technology of composite film and graphene film, which is applied in metal material coating process, superimposed layer plating, ion implantation plating, etc., can solve the problem of increasing interface thermal resistance and reduce interface thermal resistance and operating cost Low, thickness controllable effect

Inactive Publication Date: 2018-09-04
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] There are thermal conductive materials that combine copper and graphene film on the market, and the copper foil and graphene film are bonded by double-sided adhesive materials, which greatly increases the interface thermal resistance

Method used

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  • Large-flake graphite/metal heterojunction composite thin film for heat conducting and preparation method thereof
  • Large-flake graphite/metal heterojunction composite thin film for heat conducting and preparation method thereof
  • Large-flake graphite/metal heterojunction composite thin film for heat conducting and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] 1) Preparation of graphene membrane: the suspension of graphene oxide was diluted to a concentration of 2mg mL with ultrapure water with a resistivity of 18.25MΩ·cm -1 . After centrifugation at 5000rpm for 30min, take the bottom 30% volume solution and dilute to 2mg mL -1 , centrifuge again to enter the next cycle. Repeat the above operation 5 times, take the final 30% volume solution at the bottom, and concentrate it to 20mgmL -1 The large-scale graphene oxide dispersion liquid was scraped on the surface of copper foil, and vacuum-dried at 60°C for 24 hours to separate the large-scale graphene oxide film from the copper foil. The large-scale graphene film was synthesized by heating and rolling at 200°C.

[0052] 2) Preparation of flexible graphene film: place the large-scale graphene film after heating and rolling in a graphite high-temperature furnace, and first carbonize it at 1300 °C for 2 hours, with a heating rate of 5 °C min -1 , and then heat treated at 3000...

Embodiment 2

[0057] 1) Preparation of graphene membrane: the suspension of graphene oxide was diluted with ultrapure water with a resistivity of 18.25MΩ·cm to a concentration of 5mg mL -1 . After centrifugation at 6000rpm for 30min, take the bottom 20% volume solution and dilute to 5mg mL -1 , centrifuge again to enter the next cycle. Repeat the above operation 7 times, take the last 20% volume solution at the bottom, and concentrate it to 20mgmL -1 The large-scale graphene oxide dispersion liquid was scraped on the surface of copper foil, evaporated at room temperature for 24 hours, and the large-scale graphene oxide film was separated from the copper foil. The large-scale graphene film was synthesized by heating and rolling at 200°C.

[0058] 2) Preparation of flexible graphene film: place the heated and rolled graphene film in a graphite high-temperature furnace, and first carbonize it at 1000 °C for 2 hours, with a heating rate of 3 °C min -1 , and then heat treated at 3000°C for 1...

Embodiment 3

[0062] 1) Preparation of graphene membrane: the suspension of graphene oxide was diluted to a concentration of 2mg mL with ultrapure water with a resistivity of 18.25MΩ·cm -1 . After centrifugation at 3000rpm for 20min, take the bottom 30% volume solution and dilute to 2mg mL -1 , centrifuge again to enter the next cycle. Repeat the above operation 7 times, take the final 30% volume solution at the bottom, and concentrate it to 20mgmL -1 The large-scale graphene oxide dispersion liquid was scraped on the surface of copper foil, evaporated at room temperature for 24 hours, and the large-scale graphene oxide film was separated from the copper foil. The large-scale graphene film was synthesized by heating and rolling at 100°C.

[0063] 2) Preparation of flexible graphene film: place the heated and rolled graphene film in a graphite high-temperature furnace, and first carbonize it at 1300 °C for 2 hours, with a heating rate of 5 °C min -1 , and then heat treated at 2000°C for ...

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Abstract

The invention relates to a large-flake graphite / metal heterojunction composite thin film for heat conducting and a preparation method thereof. The large-flake graphite / metal heterojunction composite thin film adopts a large-flake graphite film as a substrate, and a layer of metal is compounded on the surface of the large-flake graphite film; and through folds and granular bubbles on the surface ofthe large-flake graphite film, the large-flake graphite film and metal particles are closely anchored together, and quick transmitting of electrons and heat is facilitated. The prepared large-flake graphite / metal heterojunction composite thin film is 7-101 [mu]m thick. Compared with traditional graphite thin film heat conducting materials, the large-flake graphite / metal heterojunction composite thin film is higher in heat conducting performance and electric conductivity, wherein the heat conductivity is 1351-2024W m<-1>K<-1>, and the electric conductivity is 5.00(+ / -0.27)*106-5.88(+ / -0.29)*106S m<-1>. In addition, the large-flake graphite / metal heterojunction composite thin film is low in weight, flexible, controllable in thickness, capable of being produced in a large scale and wide in application field.

Description

technical field [0001] The invention relates to a large scale graphene / metal heterojunction composite film for heat conduction and a preparation method thereof, belonging to the field of new material preparation. Background technique [0002] With the rapid development of electronic technology and communication technology, commercial portable electronic products, such as tablet computers, smart phones, etc., and light-emitting diode (LED) lamps have been more and more widely used. However, the size of transistors and other integrated circuit devices continues to shrink, and the increase in computing power comes at the expense of increased power consumption in devices and chips. The power consumption of modern chip structures is extremely uneven on the chip surface, and the power density of local functional areas can reach 5 to 10 times the average value. In electronic devices, the overall reliability depends on the maximum temperature of a local area of ​​the chip, not the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C28/00C23C14/35C23C14/18
CPCC23C14/185C23C14/35C23C28/322C23C28/34
Inventor 木士春王哲何大平
Owner WUHAN UNIV OF TECH
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