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Niobium telluride two-dimensional material as well as synthesis and application thereof

A technology of two-dimensional materials and raw materials, applied in the field of nanomaterials

Active Publication Date: 2018-09-04
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although NbTe 2 have such unique properties, but the current research on them is mostly based on theoretical calculations or bulk single crystals, and there is an urgent need to successfully prepare ultra-thin NbTe in experiments. 2 single crystals and study them in greater depth

Method used

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  • Niobium telluride two-dimensional material as well as synthesis and application thereof
  • Niobium telluride two-dimensional material as well as synthesis and application thereof
  • Niobium telluride two-dimensional material as well as synthesis and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0110] NbTe 2 Preparation of nanosheets:

[0111] Put the porcelain boat filled with 0.02g Te powder in high temperature constant temperature zone 2, filled with 0.1g NbCl 5 The porcelain boat of the powder is placed upstream of the Te powder, and the NbCl 5 The heating volatilization temperature of the powder is 200°C; a piece of Si / 285nm SiO 2 as NbTe 2 The bright side of the growth substrate was covered directly above the ceramic boat loaded with Te powder to obtain a suitable crystal growth temperature. Before heating, exhaust the air in the quartz tube with a large flow of argon. Then heat the constant temperature zone 2 to 550°C (the heating volatilization temperature of Te powder is 550°C; the deposition temperature is 550°C), and set the carrier gas flow rate to 80 / 8sccm (Ar / H 2 ), constant temperature for 10min, there will be ultra-thin single crystal NbTe on the silicon wafer 2 Nanosheet generation. NbTe 2 The experimental setup of the nanosheets is shown in ...

Embodiment 2

[0115] Compared with Example 1, the difference is that the substrate temperature is 550° C., the flow rate is 200 / 20 sccm, and the deposition time is 10 min. Figure 4 For the prepared NbTe 2 Optical schematic diagram of nanosheet, Si / SiO 2 The base is light purple, and the white, light purple, and dark purple hexagons / triangles represent different thicknesses of NbTe 2 (from thick to thin), compared with embodiment 1, increased carrier gas flow, the NbTe obtained under this condition 2 The nanosheets are larger in size and have good crystallinity, the thickness can be as thin as 4.5nm, and the thickness is less than 300nm, and the size is 3-15μm. Figure 4 The scale bar in is 10 μm.

Embodiment 3

[0117] Compared with Example 1, the difference is that the substrate temperature is 550° C., the flow rate is 30 / 3 sccm, and the deposition time is 10 min. Figure 5 For the prepared NbTe 2 Optical schematic diagram of nanosheet, Si / SiO 2 The base is light red, and the white, light purple, dark purple hexagons / triangles represent different thicknesses of NbTe 2 (From thick to thin); Compared with Example 1, the carrier gas flow rate is reduced, and the obtained NbTe2 overall thickness becomes thicker and the size becomes smaller. Among them, the thinnest thickness is 8nm, the thickest is 380nm, and the size is 2-5μm. Figure 5 The scale bar in is 10 μm. Non-preferred flow, the obtained effect is slightly worse than that of Example 1, for example, the thickness of the obtained two-dimensional material will be slightly thicker.

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Abstract

The invention belongs to the field of two-dimensional material preparation, and specifically discloses a preparation method of an NbTe2 two-dimensional material. The preparation method is characterized by comprising the following steps: volatilizing NbC15 at the volatilization temperature of not lower than 120 DEG C and Te powder at the volatilization temperature of 500 to 700 DEG C; reacting volatilized raw materials under the carrier gas flow of 20 to 220 sccm and the deposition temperature of 500 to 700 DEG C, and growing the raw materials on the surface of a substrate to obtain the NbTe2 two-dimensional material. Carrier gas is a mixed atmosphere of shielding gas and hydrogen, wherein the volume percentage of hydrogen is 1% to 10%. The invention further discloses the NbTe2 two-dimensional material obtained by the preparation method and application thereof. The NbTe2 nanosheet prepared in the invention is good in hexagonal or triangular shape, the thickness is 4.5 to 360 nm, the size is 2 to 30 microns, the NbTe2 nanosheet is a single crystal, and the NbTe2 nanosheet is high in quality and controllable in thickness.

Description

technical field [0001] The invention belongs to the field of nanomaterials, and in particular relates to the preparation of a two-dimensional niobium telluride material and its application in electrical devices and magnetism. technical background [0002] Transition metal dichalcogenides (TMDs) are a class of layered materials in which a layer of metal atoms is sandwiched between two layers of chalcogenides as a monolayer structure 1 . Since the 1960s, a large number of TMDs have been extensively studied for various research fields, such as lubrication, batteries, charge density wave materials, and superconductivity, among others. Recently, there has been renewed interest in these materials due to the emergence of interesting physical phenomena in two-dimensional materials (2D). Among 2D TMDs, the semiconducting subset of TMDs, where the transition metal is usually Mo or W and the chalcogen atoms are S or Se, has received the greatest attention due to its potential applica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B29/64C30B25/00B82Y40/00
CPCB82Y40/00C30B25/00C30B29/46C30B29/64
Inventor 段曦东段镶锋吴瑞霞
Owner HUNAN UNIV
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