A kind of preparation method of perovskite film layer and perovskite light-emitting diode device

Abstract

The invention discloses a method for preparing a perovskite film layer and a perovskite light-emitting diode device, comprising the following steps: 1) drying a transparent conductive glass substrate after standardized cleaning; 2) placing the substrate in ultraviolet ozone Irradiate under the lamp for 10 minutes, and then spin-coat the hole transport material on the transparent conductive glass to form a hole transport layer; 3) spin-coat the perovskite precursor solution by using multiple spin coating methods, and spin-coat the hole transport layer to form perovskite 4) Vacuum-evaporating electron transport materials on the perovskite luminescent layer to form an electron transport layer; 5) Vacuum-evaporating electron injection materials and metals on the electron transport layer to form an electron injection layer and a cathode layer, Obtain a perovskite light-emitting diode device; 6) package the light-emitting device in a glove box with an inert gas atmosphere. The multi-spin coating method provided by the invention can inhibit the crystallization of the perovskite, make the perovskite film more compact and uniform, have a large coverage, enhance PL, and help improve the performance of the light-emitting diode device.

Description

technical field [0001] The invention relates to a perovskite film layer and a method for preparing a perovskite light-emitting diode device, belonging to the technical field of electroluminescent diode devices. Background technique [0002] Organic light-emitting diodes (OLEDs) have attracted widespread attention due to their many advantages such as simple fabrication process, fast response, no need for backlight and flexible bending. In recent years, perovskite materials have attracted extensive attention because they have the characteristics of both organic and inorganic semiconductor materials. The unique advantages of halide perovskite materials such as high carrier mobility, low exciton binding energy, and wide absorption spectrum make them widely used in photovoltaic cells, electroluminescent devices, and photodetectors. Optoelectronic devices have a wide range of applications. In addition, the advantages of perovskite materials, such as low-temperature, solution met...

AI Technical Summary

Problems solved by technology

Evaporation method is rarely used because of its expensive equipment and low utilization of raw materials, which makes the cost high

However, the perovskite film prepared by the general solution method has a low coverage and many small holes, which lead to direct contact between the electrons on the upper and lower layers of the light-emitting layer and the hole transport layer, and the shunt is serious, which seriously affects the performance of the device.

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