Water-based diamond wire silicon wafer cutting fluid

A silicon wafer cutting fluid and diamond wire technology, applied in the petroleum industry, fine working equipment, manufacturing tools, etc., can solve the problems of poor silicon powder sedimentation, slow cutting speed, low silicon wafer yield, etc., and achieve silicon powder residual The effect of less, less equipment requirements, and fast cutting speed of silicon wafers

Active Publication Date: 2018-09-21
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is: on the premise that the traditional mortar suspension cutting fluid is eliminated, a cutting fluid for wire-cut

Method used

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  • Water-based diamond wire silicon wafer cutting fluid
  • Water-based diamond wire silicon wafer cutting fluid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A water-based diamond wire silicon chip cutting fluid, which is calculated as the following components in parts by weight: 8 parts of fatty acid methyl ester, 10 parts of polyethylene glycol 400 monolaurate, and di-sec-octyl maleate sulfonic acid 5 parts of sodium, 4 parts of polyoxyethylene sorbitan monooleate, 0.5 parts of sodium xylene sulfonate, 2.5 parts of decynediol polyoxyethylene ether and 70 parts of deionized water.

[0019] The preparation method of the water-based diamond wire silicon chip cutting fluid in the present embodiment is:

[0020] Add fatty acid methyl ester, polyethylene glycol 400 monolaurate, sodium di-sec-octyl sulfonate maleate, polyoxyethylene sorbitan monooleate, and decynediol polyoxyethylene ether to the stirring Stir in the tank evenly, then slowly add deionized water while stirring to obtain a translucent emulsion, and finally add sodium xylene sulfonate and stir evenly to obtain a water-based diamond wire silicon wafer cutting fluid. ...

Embodiment 2

[0022] A kind of water-based diamond wire silicon chip cutting fluid, calculated as the following components in parts by weight:

[0023] 10 parts of fatty acid methyl ester, 8 parts of polyethylene glycol 400 monolaurate, 5 parts of sodium di-sec-octyl maleate sulfonate, 5 parts of polyoxyethylene sorbitan monooleate, xylene sulfonic acid 1 part of sodium, 5 parts of decynediol polyoxyethylene ether and 66 parts of deionized water.

[0024] The preparation method of the water-based diamond wire silicon chip cutting fluid in the present embodiment is:

[0025] Add fatty acid methyl ester, polyethylene glycol 400 monolaurate, sodium di-sec-octyl sulfonate maleate, polyoxyethylene sorbitan monooleate, and decynediol polyoxyethylene ether to the stirring Stir in the tank evenly, then slowly add deionized water while stirring to obtain a translucent emulsion, and finally add sodium xylene sulfonate and stir evenly to obtain a water-based diamond wire silicon wafer cutting fluid. ...

Embodiment 3

[0027] 5 parts of fatty acid methyl ester, 15 parts of polyethylene glycol 400 monolaurate, 10 parts of sodium di-sec-octyl maleate sulfonate, 2 parts of polyoxyethylene sorbitan monooleate, xylene sulfonic acid 0.1 part of sodium, 1 part of decynediol polyoxyethylene ether and 66.9 parts of deionized water.

[0028] The preparation method of the water-based diamond wire silicon chip cutting fluid in the present embodiment is:

[0029] Add fatty acid methyl ester, polyethylene glycol 400 monolaurate, sodium di-sec-octyl sulfonate maleate, polyoxyethylene sorbitan monooleate, and decynediol polyoxyethylene ether to the stirring Stir in the tank evenly, then slowly add deionized water while stirring to obtain a translucent emulsion, and finally add sodium xylene sulfonate and stir evenly to obtain a water-based diamond wire silicon wafer cutting fluid.

[0030] After the cutting liquid of above-mentioned each embodiment is diluted 400 times with deionized water respectively, ca...

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Abstract

The invention belongs to the technical field of cutting of silicon crystals of a photovoltaic industry, and particularly relates to water-based diamond wire silicon wafer cutting fluid. The water-based diamond wire silicon wafer cutting fluid is prepared from the following components: fatty acid methyl ester, polyethylene glycol 400 monolaurate, sodium di-sec-octylmal-eacesulfonate, polyoxyethylene dehydrated sorbitol monooleate, sodium xylene sulfonate, decyne-diol-polyoxyethylene ether and deionized water. The water-based diamond wire silicon wafer cutting fluid is excellent in lubricating performance and cooling performance, high in silicon powder precipitation speed, small in diamond wire abrasion, simple in preparation method, easy in controlling conditions, low in cost, low in requirement for equipment and suitable for industrialized production.

Description

technical field [0001] The invention belongs to the technical field of silicon crystal cutting in the photovoltaic industry, and in particular relates to a water-based diamond wire silicon chip cutting fluid. Background technique [0002] With the change of global energy demand, clean and environment-friendly energy has become a hot research topic. Solar energy is both primary energy and renewable energy. It is rich in resources, can be used for free, does not need to be transported, and has no pollution to the environment. It has created a new life form for human beings, and brought society and human beings into an era of saving energy and reducing pollution. Photovoltaic semiconductor silicon wafers have emerged as the times require and become the pillar industry of solar energy, and the demand for silicon wafers has grown rapidly. Slicing is an important process in silicon wafer processing, and it is also one of the main processes that cause silicon wafer stress, surfa...

Claims

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Application Information

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IPC IPC(8): C10M173/00C10M173/02B28D5/04C10N30/06
CPCB28D5/045C10M173/00C10M173/02C10M2207/28C10M2209/104C10M2219/044C10N2030/06C10M2209/108C10M2209/109C10N2010/02
Inventor 李永双李德江
Owner CHINA THREE GORGES UNIV
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