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Flexible magnetic field strength sensor based on magnetoelectric composite film

A technology of magnetoelectric composite and magnetic field strength, applied in the field of microelectronics, can solve the problems of low detection sensitivity, inability to bend, and large thickness of composite materials, and achieve the effects of increased sensitivity, good magnetoelectric properties, and small size

Active Publication Date: 2018-09-25
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current flexible magnetic field strength sensor is an active sensor based on Hall devices, but its disadvantage is low detection sensitivity
The use of magnetoelectric composite materials can effectively improve the detection sensitivity. However, due to the thickness of the composite material used in the existing composite material detectors, it cannot be bent, so it is impossible to make flexible electronic devices for wearable devices.

Method used

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  • Flexible magnetic field strength sensor based on magnetoelectric composite film
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1: Preparation of a flexible magnetic field sensor based on a double-layer magnetoelectric composite film.

[0034] Step 1: growing a lanthanum strontium manganese oxide thin film on a strontium titanate substrate.

[0035] 1a) Put the strontium titanate substrate, lanthanum strontium manganese oxide target, barium titanate target and cobalt ferrite target into the reaction chamber of the pulsed laser deposition system, and evacuate the reaction chamber until the vacuum degree reaches 1* 10 -6 Below mbar;

[0036] 1b) Introduce oxygen into the reaction chamber to maintain the oxygen pressure in the reaction chamber at 0.1mbar, and set the energy density of the laser to 1.13J / cm 2 The sum frequency is 3Hz, the temperature of the substrate is set to 650°C, the laser emits laser light, and the lanthanum strontium manganese oxide target is burned 8000 times, and the burnt out lanthanum strontium manganese oxide plasma is deposited on the strontium titanate substra...

Embodiment 2

[0050] Example 2: Preparation of a flexible magnetic field sensor based on a three-layer magnetoelectric composite film.

[0051] Step 1: growing a lanthanum strontium manganese oxide thin film on a strontium titanate substrate.

[0052] The specific implementation of this step is the same as step 1 in Embodiment 1.

[0053] Step 2: Depositing three layers of magnetoelectric composite films on the lanthanum strontium manganese oxide film.

[0054] 2.1) Adjust the oxygen into the reaction chamber to maintain the oxygen pressure in the reaction chamber at 0.1mbar, and set the energy density of the laser to 3.2J / cm 2 The sum frequency is 5Hz, the temperature of the substrate is set to 650°C, the laser emits laser light, and the cobalt ferrite target is burnt 2000 times to deposit cobalt ferrite plasma to obtain a cobalt ferrite film;

[0055] 2.2) Keep the oxygen pressure in the reaction chamber constant, and set the energy density of the laser to 1.7J / cm 2 The sum frequency i...

Embodiment 3

[0067] Example 3: Preparation of a flexible magnetic field sensor based on a four-layer magnetoelectric composite film.

[0068] Step A: growing a lanthanum strontium manganese oxide film on a strontium titanate substrate.

[0069] The specific implementation of this step is the same as step 1 in Embodiment 1.

[0070] Step B: Depositing four layers of magnetoelectric composite films on the lanthanum strontium manganese oxide film.

[0071] B1) Adjust the oxygen into the reaction chamber to maintain the oxygen pressure in the reaction chamber at 0.1mbar, and set the energy density of the laser to 3.2J / cm 2 The sum frequency is 5Hz, the temperature of the substrate is set to 650°C, the laser emits laser light, and the cobalt ferrite target is burnt 2000 times to deposit cobalt ferrite plasma to obtain a cobalt ferrite film;

[0072] B2) Keep the oxygen pressure in the reaction chamber constant, and set the energy density of the laser to 1.7J / cm 2 The sum frequency is 3Hz, th...

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Abstract

The invention discloses a manufacturing method of a flexible magnetic field strength sensor based on a magnetoelectric composite film. The problem that the existing magnetic field strength sensor haslow sensitivity and cannot be bent is solved. According to the implementation scheme, 1 a lanthanum strontium manganese oxide film is deposited on a strontium titanate substrate, and cobalt ferrite and a barium titanate film are successively deposited on the lanthanum strontium manganese oxide film to acquire a multilayer magnetoelectric composite film; 2 polymethyl methacrylate is spin-coated, and the lanthanum strontium manganese oxide film is removed with a potassium iodide solution; 3 the off-substrate magnetoelectric composite film is transferred to a subsequent needed flexible substrate;and 4 electrodes are added to left and right sides of the surface of the magnetoelectric composite film to complete the manufacturing of the magnetic field strength sensor. According to the invention, the magnetoelectric composite film is used as a sensing material, so that the sensor can be bent; the magnetoelectric characteristic of the bent film is remarkably enhanced; the sensitivity of the magnetic sensor is improved; the requirement of a flexible electronic device is satisfied; and the method can be used to prepare a semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a manufacturing method of a flexible magnetic field intensity sensor based on a magnetoelectric composite film, which can be used in the preparation of semiconductor devices. Background technique [0002] Magnetoelectric materials are a class of multiferroic materials, which refer to materials that have both ferroelectricity and ferromagnetism within a certain temperature range. Due to the ferroelectric-ferromagnetic cross-coupling effect in magnetoelectric materials, it is possible to change the magnetization by electric field and the electric polarization by magnetic field. However, single-phase ferromagnetic multifunctional materials have the disadvantages of too low Curie temperature and too weak magnetoelectric coupling coefficient, which lead to a far distance from practical use, and magnetoelectric composite materials have appeared for this reason. Di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/10H10N50/01
CPCH10N50/01H10N50/85
Inventor 陆小力吴飞虎史泽堃王贺黄玉瑶张进成郝跃
Owner XIDIAN UNIV
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