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A kind of ultra-fine polishing grinding wheel for gallium arsenide wafer polishing and preparation method thereof
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A gallium arsenide, fine polishing technology, applied in the field of grinding wheels, can solve problems such as low efficiency and easy generation of debris, and achieve the effect of avoiding debris, ensuring chip space, and achieving good uniformity and consistency
Active Publication Date: 2019-11-05
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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Problems solved by technology
This method is inefficient and prone to fragments, and the polishing time is more than 30 minutes. The source of the fragments may be the cracks produced by the grinding wheel in the previous process, which are highlighted when the compact is pressed during polishing.
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Embodiment 1
[0031] An ultra-fine polishing wheel for gallium arsenide wafer polishing, made of the following raw materials in parts by volume: 15 parts of diamond, 4 parts of coupling agent, 5.5 parts of pore-forming agent, 22 parts of silicon dioxide, 8 parts of ceriumoxide, 18 parts of phenolic resin.
[0032] The preparation method of the ultrafine polishing wheel for gallium arsenide wafer polishing comprises the following steps:
[0033] (1) Mill the phenolic resin with a liquid nitrogenball mill for 168 hours, pass through a 280-mesh sieve, and obtain powdery phenolic resin; take each raw material according to volume, and pass all powdery raw materials through a 280-mesh sieve, pore-forming agent Bake in an oven at 80°C for 0.5 hours and set aside;
[0034] (2) Soak the diamond in lye at 80°C for 120 minutes, then separate the solid from the liquid, wash the solid with deionized water, and dry it; then immerse the diamond degreased by lye in acetone, stir and ultrasonically dispe...
Embodiment 2
[0039]An ultrafine polishing grinding wheel for gallium arsenide wafer polishing, made of the following raw materials in parts by volume: 23 parts of diamond, 6 parts of coupling agent, 5 parts of pore-forming agent, 15 parts of silicon dioxide, 5 parts of ceriumoxide, 20 parts of phenolic resin.
[0040] The preparation method of the ultrafine polishing wheel for gallium arsenide wafer polishing comprises the following steps:
[0041] (1) Mill the phenolic resin with a liquid nitrogenball mill for 178 hours, pass through a 280-mesh sieve, and obtain powdery phenolic resin; take each raw material according to the volume and quantity, and pass all powdery raw materials through a 280-mesh sieve, pore-forming agent Bake in an oven at 80°C for 0.5 hours and set aside;
[0042] (2) Soak the diamond in lye at 90°C for 120 minutes, then separate the solid from the liquid, wash the solid with deionized water, and dry it; then immerse the diamond degreased by lye in acetone, stir an...
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Abstract
The invention discloses an ultrafine polishinggrinding wheel for polishinggalliumarsenide wafers. The ultrafine polishinggrinding wheel is prepared from, by volume, 15-25 parts of diamond, 2-6 parts of a coupling agent, 2.5-5.5 parts of a pore-forming agent, 15-25 parts of silicon dioxide, 5-10 parts of ceriumoxide and 15-22 parts of phenolic resin. The invention further discloses a preparation method of the ultrafine polishing grinding wheel for polishing the galliumarsenide wafers and application of the ultrafine polishing grinding wheel to polishing of the galliumarsenide wafers. Theprepared ultrafine polishing grinding wheel is uniform and soft in tissue, the gas hole ratio is 35-60%, and the hole diameter is 50-200 microns; and the ultrafine polishing grinding wheel has good grinding performance on the semiconductor material gallium arsenide wafers, the surface damaged layers of the ground wafers are low, production efficiency is greatly improved, and the yield is greatlyincreased.
Description
technical field [0001] The invention belongs to the technical field of grinding wheels, and in particular relates to an ultrafine polishing grinding wheel for gallium arsenidewafer polishing and a preparation method thereof. Background technique [0002] Gallium arsenide wafers belong to III-V compound semiconductors, the chemical formula is GaAs, the molecular weight is 144.63, and the band gap is 1.4 electron volts. Gallium arsenide wafers can be made into semi-insulating high-resistivity wafers with resistivity higher than that of silicon and germanium by more than 3 orders of magnitude. Resistive materials, used to make integrated circuit substrates, infrared detectors, r-photon detectors, etc. Semiconductor devices made of gallium arsenide wafers have the advantages of high temperature, high frequency, low temperature performance, low noise, and strong radiation resistance. Gallium arsenide wafer is a material with many advantages in semiconductor materials. However, ...
Claims
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